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    KM6161002J Search Results

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    Samsung Semiconductor KM6161002J-15

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    Bristol Electronics KM6161002J-15 16
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    Samsung Electro-Mechanics KM6161002J-15

    IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
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    Quest Components () KM6161002J-15 26
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    KM6161002J-15 7
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    Samsung Electro-Mechanics KM6161002J-20

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    Quest Components KM6161002J-20 23
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    KM6161002J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CMOS SRAM KM6161002 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation S tandby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002J-15 : 230 K M 61 6100 2J-1 7: 220


    OCR Scan     		KM6161002 KM6161002J-15 6161002J-20 KM6161002 576-bit PDF

    KM6161002J-15

    Abstract: KM6161002J15 KM6161002J-20 KM6161002J KM6161002J-17
    Contextual Info: CMOS SRAM KM6161002 64K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002J-15 : 230 mA(Max.) K M 6161002J-17: 220 mA(Max.)


    OCR Scan     		KM6161002 KM6161002J-15 KM6161002J-17: KM6161002J-20 KM6161002J 44-SOJ-400 KM6161002 576-bit I/O9-I/O16 DD214ia KM6161002J-15 KM6161002J15 KM6161002J KM6161002J-17 PDF

    km6161002j15

    Contextual Info: PRELIMINARY KM6161002 CMOS SRAM 65,536 W O R D x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating KM6161002J-15: 230mA (Max.)


    OCR Scan     		KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin KM6161002 km6161002j15 PDF

    ic tba 220

    Abstract: km6161002j KM6161002-17
    Contextual Info: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17 PDF

    Contextual Info: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating: KM6161002-15: 230mA (Max.) KM6161002-17 : 220mA (Max.)


    OCR Scan     		KM6161002 KM6161002-15: 230mA KM6161002-17 220mA KM6161002-20 210mA KM6161002J: 44-SOJ-400 KM6161002 PDF

    Contextual Info: KM6161002 CMOS SRAM ELECTR O NICS 6 4 K x 1 6 B H High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.)


    OCR Scan     		KM6161002 KM6161002-15 KM6161002-17 KM6161002-20 KM6161002 576-bit PDF

    Contextual Info: KM6161002 CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.) KM6161002-17: 220 mA(Max.)


    OCR Scan     		KM6161002 KM6161002-15 KM6161002-17: KM6161002-20 KM6161002J 44-SOJ-4Ã KM6161002 576-bit 71fci4 PDF

    KM6161002J-15

    Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7^4142 DDlTb^fi 21G PRELIMINARY KM6161002 SMGK CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby


    OCR Scan     		KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin KM6161002 KM6161002J-15 PDF

    Contextual Info: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating : KM6161002-15 : 230mA (Max.) KM6161002-17 : 220mA (Max.)


    OCR Scan     		KM6161002 KM6161002-15 230mA KM6161002-17 220mA KM6161002-20 210mA KM6161002J 44-SOJ-400 KM6161002 PDF

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY PDF

    Contextual Info: KM6161002 CMOS SRAM 65,536 WORDx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS) : 10mA (Max.) Operating : KM6161002-15 : 230mA (Max.) KM6161002-17 : 220mA (Max.)


    OCR Scan     		KM6161002 KM6161002-15 230mA KM6161002-17 220mA KM6161002-20 210mA KM6161002J 44-SOJ-400 KM6161002 PDF

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624 PDF