KM6164002J Search Results

KM6164002J-20

Abstract: KM6164002J20
Contextual Info: PRELIMINARY CMOS SRAM KM6164002 262,144 W ORDx 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.) Operating KM6164002J-20: 240mA (Max.)

KM6164002j

Abstract: KM6164002J20
Contextual Info: ADVANCE INFORMATION CMOS SRAM KM6164002 262,144 WORDx 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 20mA (max.) Operating KM6164002J-15: 280mA (max.)

KM6164002j

Contextual Info: KM6164002/KM6164002L CMOS SRAM 2 5 6 K x 16 Bit High-Speed CM O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)

hsm9350mhz

Abstract: "Spanning Tree" TIBPAL22V10-15BC
Contextual Info: Configuring the TNETX3150 ThunderSWITCH for the Cascade Mode APPLICATION REPORT: SDNA011 Date: May 1997 Networking Business Unit IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of

Contextual Info: KM6164002/KM6164002L CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500|iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 = ^4 1 4 2 0D14230 1ST ADVANCE INFORMATION KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.)

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)

Contextual Info: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMC>S):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)

256x16* STATIC RAM

Abstract: KM6164002j KM6164002 KM6164002E KM6164002I SRAM sheet samsung
Contextual Info: PRELIMINARY CMOS SRAM KM6164002, KM6164002E, KM6164002I PACKAGE DIMENSIONS 44-SOJ-400 Units : Inches millimeters #23 9.40±0.25 0.370±0.010 10.16 0.400 #44 11.18±0.12 0.440±0.005 0.20 +0.10 -0.05 0.008 +0.004 -0.002 #22 #1 28.98 MAX 1.141 25.58±0.12

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

Contextual Info: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (C M O S):10m A(M ax.) 500|.iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)

24c02 atmel

Abstract: TNETX3100 SN74LSXX atmel 24c02 FIGURE KM6164002J20
Contextual Info: Building an 18 Port Switch Using Two TNETX3100 Desktop ThunderSWITCH Devices APPLICATION REPORT: SDNA019A Networking Business Unit October 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor

KM6164002j

Abstract: KM6164002 ISE Electronics
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: KM6164002, KM6164002E, KM6164002I CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0