KM616FR Search Results

Contextual Info: KM616FR4010 Family Advance CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise Speed bin change : 70/100ns —> 85/100ns

Contextual Info: Advance CMOS SRAM KM616FR4110 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 0.1 0.11 History Draft Date Remark Initial Draft April 8, 1998 Advance June 27, 1998 Advance Revise - Speed bin change : 70/100ns —> 85/100ns

Contextual Info: Preliminary KM616FS1010Z, KM616FR ì010Z Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM with 48-CSP FEATURE SUMM ARY GENERAL DESCRIPTION • Process Technology : 0.4f«n Full CMOS • Organization: 64Kx16 • Power Supply Voltage

Contextual Info: Advance KM616FR4010 Family CMOS SRAM 256K X 16 bit Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • The KM618FR4010 family is fabricated by SAMSUNG'S advanced full CMOS process technology. The family supports

Contextual Info: KM616FS1010, KM616FR1010 Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATU RES GENERAL DESCRIPTION . Process Technology : 0.4ym Full CM O S The KM616FS1010 and KM616FR1010 family Is fabricated by • Organization :64Kx16b*

Contextual Info: Preliminary CMOS SRAM KM616FS2000Z, KM616FR2000Z Family Document Title 128Kx16 Super Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 st edition - P ackage D im ension F inalized

Contextual Info: KM616FS1010Z, KM616FR1010Z Family Preliminary CMOS SRAM D o c u m e n t T itle 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision History Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode

Contextual Info: Advance CMOS SRAM KM616FR4010 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise - Speed bin change : 70/100ns → 85/100ns

Contextual Info: Advance CMOS SRAM KM616FR2010A Family Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark August 6, 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

KM616FS2000

Abstract: 960i
Contextual Info: Preliminary CMOS SRAM KM616FU2000, KM616FS2000, KM616FR2000 Family 128Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM616FU2000, KM616FS2000 and KM616FR2000 • Organization : 128K x 16

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial draft March 15, 1996 Advance 0.1 Revise - Erase 100ns part from KM616FS1000 Family

5LEC

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS • Organization : 64K x 16 The KM616FV1000, KM616FS1000 and KM616FR1000 • Power Supply Voltage

ic tba 810

Contextual Info: KM616FS1010Z, KM616FR1010Z Family Preliminary CMOS SRAM Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997 Preliminary

44TSOP2

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Famtly CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Futt CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 64Kx16 bit . Power Supply Voltage KM616FV100Q Family : 3.0V - 3.6V

Contextual Info: Advance KM616FR2010A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Révision History Revision No. History 0.0 Initial Draft Draft Date Remark A u g u ste , 1998 Advance T he attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

KM616FS1000

Abstract: KM616FV1000 SRAM 64Kx16
Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15, 1996 Advance 0.1 Revise - Erase 100ns part from KM616FS1000 Family

transistor x1 3001

Abstract: KM616FS2000Z cs x1 3001
Contextual Info: KM616FS2000Z, KM616FR2000Z Family Preliminary CMOS SRAM Document Title 128Kx16 Super Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History History Draft Data Remark 0.0 Initialize - Package dimension finalized February. 4, 1997 Preliminary

Contextual Info: Preliminary CMOS SRAM KM616FS1000Z, KM616FR1000Z Family Document Titie 64Kx16 SUper Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 st edition - Package Dimension Finalized Feb. 4 th , 1 9 9 7

Contextual Info: Preliminary KM616FS2000Z, KM616FR2000Z Family CMOS SRAM Document Title 128Kx16 Super Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History R e v is io n N o . 0.0 H is to ry Initialize Draft Data R e m a rk February. 4, 1997 Prelim inary

Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft March 15th 1996 Advance 0.1 Revise - Erase 100ns part from KM 616FS1000 Family

cs x1 3001 h 05

Abstract: cs X1 3001
Contextual Info: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION FEATURES • Process Technology : Full CMOS • Organization : 64Kx16 bit • Power Supply Voltage KM 616FV1000 Family : 3.0V ~ 3.6V

Contextual Info: Preliminary CMOS SRAM KM616FU1000, KM616FS1000, KM616FR1000 Family 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM616FU1000, KM616FS1000 and KM616FR1000 • Organization : 64K x 16 family are fabricated by SAMSUNG'S advanced Full

Contextual Info: Advance CMOS SRAM KM616FR4010 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 0.1 0.11 History Draft Date Remark Initial Draft April 2, 1998 Advance June 27, 1998 Advance Revise - Speed bin change : 70/100ns —> 85/100ns

Contextual Info: KM616FV2000, KM616FS2000, KM616FR2000 Family CMOS SRAM ocument Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Design target Draft Date Remark O ctober 2nd 1996 Advance 0.1 Initial draft - Add KM 616FV2000 Family