KM6264A10 Search Results

Contextual Info: SAMSUNG SE MI CO NDUCTOR INC 1Û D e J 7 ^ 4 1 4 2 000S537 .— •. ' T-46-23-12 KM6264A/KM6264AL CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • • • • • •

KM6264AL-10

Abstract: KM6264A km6264al
Contextual Info: KM6264A/KM6264AUKM6264AL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10/tW (typ.) L-Verslon 5pW (typ.) LL-Version Operating: 220mW (max.) • Single 5V ± 10% Power Supply

Contextual Info: SAMSUNG ELECTRONICS INC 42 E ]> 71 bmM 2. OGI0 7 b l T I KM6264A/KM6264AL/KM6264ALL CMOS SRAM " T ^ e v ? 8 K x 8 B i t S t a t ic R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns (max. • Low Power Dissipation Standby (CMOS): 10/jW (typ.) L-Verslon

KM6264AL-10

Abstract: KM6264AL KM6264AL10L KM6264AL10 km6264a KM6264A10 KM6264AL-7 cs1g KM6264A-10
Contextual Info: KM6264A/KM6264AL/KM6264AL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) LVersion 5/xW (typ.) LL-Verslon Operating: 220mW (max.) • Single 5V ±1 0 % Power Supply

KM6264AL-10

Abstract: sanyo LC3564PL KM6264-10 KM6264AL lc3664* sanyo KM6264AL10 KM6264-15 KMG2G km6264l-15 LC3564Q-10
Contextual Info: - 88 64 K m £ tt fi & mw CC TAAC sax ns) TCAC •ax (ns) CMOS 7s A 7 f TOE ■ax (ns) TOH ■in (ns) TOD aax (ns) > / S t a t i c # R A M ( 81 9 2 x 8 ) TWP min (ns) TDS ■in (ns) TDH min (ns) TWD ■in (ns) TWR max (n;,) V D D or V C C (V) 28PIN M «

Contextual Info: SAMSUNG SEMICONDUCTOR INC 23E D 7^4142 KM6264A/KM6264AL 00 0 0 2 41 7 CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • The KM6264A/AL is a 65,536-bit high speed Static Random Access Memory organized as 8,192 words by