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    KM64BV4002J Search Results

    KM64BV4002J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM64BV4002J-12 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF
    KM64BV4002J-15 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF
    KM64BV4002J-20 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-400 KM64BV4002 304-bit

    3hM22

    Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-4QO KM64BV4002 304-bit 3hM22 pin configuration of 8251

    KM64BV4002J-12

    Abstract: KM64BV4002J-15 KM64BV4002J-20
    Text: PRELIMINARY BiCMOS SRAM KM64BV4002 1 M x 4 Bit With OE High-Speed BiCMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12 : 160 mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 KM64BV4002J-15 150mA KM64BV4002J-20 KM64BV4002J: 32-SOJ-4QO KM64BV4002 304-bit KM64BV4002J-12 KM64BV4002J-15 KM64BV4002J-20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM64BV4002 1 M x 4 Bit With OE High-Speed BiCMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12 :160 mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 KM64BV4002J-15 KM64BV4002J-20: KM64BV4002J: 32-SOJ-4QO KM64BV4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD X 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM64BV4002J-12: 155mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12: 155mA KM64BV4002J-15: 150mA KM64BV4002J-20: 145mA KM64BV4002J 32-SOJ KM64BV4002

    KM64BV4002J-12

    Abstract: KM64BV4002J-15 KM64BV4002J-20
    Text: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES • Fast Access Time : 12 ,1 5 , 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 64B V4002J-12: 155mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 155mA KM64BV4002J-15 150mA KM64BV4002J-20 145mA KM64BV4002J 32-SOJ KM64BV4002

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With UE High-Speed BiCMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002-12 160mA KM64BV4002-13 KM64BV4002-15 KM64BV4002J: 32-SQJ-400 KM64BV4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With (JE High-Speed BiCMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002-12 160mA KM64BV4002-13 KM64BV4002-15 KM64BV4002J: 32-SOJ-4Ã KM64BV4002 304-bit

    SS24V

    Abstract: No abstract text available
    Text: Advanced Information KM64BV4002_ BiCMOS SRAM 1,048,576 WORD x4B it High-Speed BiCMOS Static RAM 3.3VOperating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.)


    OCR Scan     		PDF KM64BV4002_ KM64BV4002J-12: 155mA KM64BV4002J-15: 150mA KM64BV4002J-20: 145mA KM64BV4002J 32-SOJ KM64BV4002 SS24V

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With OE High-Speed BiCM OS Static R A M (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160m A (M ax.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002-12 KM64BV4002-13 KM64BV4002-15 KM64BV4002J: 32-SQJ-400 KM64BV4002 304-bit