KM68B1001 Search Results
KM68B1001 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IC 74142Contextual Info: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or |
OCR Scan |
KM68B1001 576-bit 400mil 32-pin KM68B1001P/J-12 180mA KM68B1001P/J-15 160mA KM68B1001 IC 74142 | |
68B10Contextual Info: SAMSUNG K M 6 8 B 1001 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high • Fast Access Tim e 12,15 ns max. • Low Power Dissipation Standby (TTL) : 60m A(m ax.) (CMOS): 20m A(m ax.) Operating KM 68B1001P/J-12 : 180mA (max.) |
OCR Scan |
KM68B1001 576-bit 68B1001P/J-12 180mA 68B1001P/J-15 160mA 68B10 32-Pin 68B1001J | |
41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
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41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 | |
TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
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OCR Scan |
TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 | |
AG10
Abstract: km416c256 1m maskrom KM68B1002-10
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OCR Scan |
KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10 |