K0032
Abstract: Y255 QN22
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)
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KM741006J
01772A
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
TTbm45
K0032
Y255
QN22
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syncronous
Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
syncronous
KM741006J-10
256Kx4 SRAM
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Untitled
Abstract: No abstract text available
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)
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OCR Scan
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)
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GG177EÃ
KM741006J
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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Untitled
Abstract: No abstract text available
Text: FÉE 8 4 1593 PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (mln. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5% Power Supply
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OCR Scan
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KM741006J
KM741006J-12:
190mA
741006J
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Untitled
Abstract: No abstract text available
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5 % Power Supply
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OCR Scan
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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Untitled
Abstract: No abstract text available
Text: 256Kx4 Syncronous SRAM KM741006 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply
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OCR Scan
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PDF
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256Kx4
KM741006
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access M em ory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (min. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5 % Power Supply
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KM741006J
KM741006J-12:
190mA
KM741006J
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64Kx8 CMOS RAM
Abstract: KM428C257 zip 40pin 52PLCC
Text: FUNCTION GUIDE MEMORY ICs Synchronous SRAM Power Dissipation Den. 1M 288K 512K Part Name KM741006 KM791001 256K 128K KM 79C86 KM 79C40 32K 32K KM 718B513 KM718BV513 KM 718B514 1M Speed ns 36 SOJ 32 SOJ Now NoW X 9 CMOS CMOS 190 190 44 PLCC 9 14/19/24 14/19/24
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KM741006
KM791001
79C86
79C40
718B513
KM718BV513
718B514
KM718BV514
718B520
KM718BV520
64Kx8 CMOS RAM
KM428C257
zip 40pin
52PLCC
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Untitled
Abstract: No abstract text available
Text: KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)
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OCR Scan
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KM741006J
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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