KMA010P20Q Search Results
KMA010P20Q Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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KMA010P20Q | Korea Electronics | P-Ch Trench MOSFET | Original | 764.05KB | 5 |
KMA010P20Q Datasheets Context Search
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Contextual Info: SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. H FEATURES T G P D VDSS=-20V, ID=-10A. L Drain-Source ON Resistance. : RDS ON =14m (Max.) @ VGS=-4.5V, ID=-10A. |
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KMA010P20Q | |
Contextual Info: SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES 2007. 3. 22 Revision No : 1 1/5 |
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KMA010P20Q | |
KMA010P20Q
Abstract: RD10
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KMA010P20Q KMA010P20Q RD10 | |
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS |