KMA2D3P20S Search Results
KMA2D3P20S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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KMA2D3P20S | Korea Electronics | P-Ch Trench MOSFET | Original | 481.07KB | 5 |
KMA2D3P20S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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KMA2D3P20SContextual Info: SEMICONDUCTOR KMA2D3P20S TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. E B FEATURES VDSS=-20V, ID=-2.3A. A H G 3 : RDS ON =130m (Max.) @ VGS=-4.5V. D 2 Drain-Source ON Resistance. |
Original |
KMA2D3P20S Fig10. Fig11. KMA2D3P20S | |
amoled
Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
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Original |
KDS160F/V/E, KDS12V/E, KDR70F/V/E KMA2D4P20S, KMA2D3P20S KDZ33EV KRC28U KRC68T) amoled 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S | |
Contextual Info: SEMICONDUCTOR KMA2D3P20S TECHNICAL DATA P-Ch Trench MOSFET General Description It’s mainly suitable for use as a load switch in battery powered applications. E B FEATURES Drain-Source ON Resistance. D VDSS=-20V, ID=-2.3A. 3 H G A 2 : RDS ON =130m (Max.) @ VGS=-4.5V. |
Original |
KMA2D3P20S | |
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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Original |
2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS |