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    KMM466S104CT Search Results

    KMM466S104CT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM466S104CT-F0 Samsung Electronics 1M x 64 SRAM SODIMM Scan PDF
    KMM466S104CT-FL Samsung Electronics 1M x 64 SRAM SODIMM Scan PDF

    KMM466S104CT Datasheets Context Search

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    KMM466S104CT-F0

    Abstract: KM416S1020CT-F10
    Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.


    Original     		PDF KMM466S104CT 144pin 200mV. 2K/32ms 4K/64ms. KMM466S104CT 1Mx64 1Mx16, KMM466S104CT-F0 KM416S1020CT-F10

    Untitled

    Abstract: No abstract text available
    Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S104CT_ 144pin KMM466S104CT 1Mx64 1Mx16 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 144pin SDRAM SODIMM KMM466S104CT KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S 104C T is a 1M bit x 64 Synchronous


    OCR Scan     		PDF 144pin KMM466S104CT KMM466S104CT 1Mx64 1Mx16, 100MHz 400mil 144-pin

    KMM466S104CT-F0

    Abstract: KMM466S104CT-FL
    Text: Preliminary 144pin SDRAM SODIMM KMM466S104CT KM M 466S104CT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DRAM s with SPD FEATURE G ENERAL DESCRIPTION P e rfo rm a n c e ra n g e T h e S a m s u n g K M M 4 6 6 S 1 0 4 C T is a 1 M bit x 6 4 S y n c h ro n o u s


    OCR Scan     		PDF KMM466S104CT KMM466S104CT 144pin KMM466S104CT-F0 KMM466S104CT-FL

    Untitled

    Abstract: No abstract text available
    Text: KM M466S1 04 CT 144pm S D R A M S O D IM M Revision History R evision .2 M ar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : -In p u t leakage currents (Inputs) : ± 5 u A to ± 1 u A . -In p u t leakage currents (I/O) : ± 5 u A to ± 1 u A .


    OCR Scan     		PDF M466S1 144pm 200mV. 2K/32ms 4K/64ms. 44pin 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM M466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 u A .


    OCR Scan     		PDF M466S104CT 144pin 200mV. 2K/32m 4K/64ms. KMM466S104CT

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT