KMM466S104CT-F0
Abstract: KM416S1020CT-F10
Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.
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KMM466S104CT
144pin
200mV.
2K/32ms
4K/64ms.
KMM466S104CT
1Mx64
1Mx16,
KMM466S104CT-F0
KM416S1020CT-F10
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Untitled
Abstract: No abstract text available
Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S104CT_
144pin
KMM466S104CT
1Mx64
1Mx16
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: Preliminary 144pin SDRAM SODIMM KMM466S104CT KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S 104C T is a 1M bit x 64 Synchronous
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144pin
KMM466S104CT
KMM466S104CT
1Mx64
1Mx16,
100MHz
400mil
144-pin
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KMM466S104CT-F0
Abstract: KMM466S104CT-FL
Text: Preliminary 144pin SDRAM SODIMM KMM466S104CT KM M 466S104CT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DRAM s with SPD FEATURE G ENERAL DESCRIPTION P e rfo rm a n c e ra n g e T h e S a m s u n g K M M 4 6 6 S 1 0 4 C T is a 1 M bit x 6 4 S y n c h ro n o u s
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KMM466S104CT
KMM466S104CT
144pin
KMM466S104CT-F0
KMM466S104CT-FL
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Untitled
Abstract: No abstract text available
Text: KM M466S1 04 CT 144pm S D R A M S O D IM M Revision History R evision .2 M ar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : -In p u t leakage currents (Inputs) : ± 5 u A to ± 1 u A . -In p u t leakage currents (I/O) : ± 5 u A to ± 1 u A .
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M466S1
144pm
200mV.
2K/32ms
4K/64ms.
44pin
1Mx16
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Untitled
Abstract: No abstract text available
Text: KM M466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Som e Parameters values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 u A .
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M466S104CT
144pin
200mV.
2K/32m
4K/64ms.
KMM466S104CT
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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