KMM53216000BK Search Results

Contextual Info: DRAM MODULE KMM53216000BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

Contextual Info: KMM53216000BK/BKG DRAM MODULE 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS KMM53216000BK/BKG DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.

KMM53216000BK

Abstract: KMM53216000BKG
Contextual Info: DRAM MODULE KMM53216000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (May 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

KMM53216000BK

Abstract: KMM53216000BKG
Contextual Info: DRAM MODULE KMM53216000BK/BKG KMM53216000BK/BKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs