KMM53616004B Search Results

16Mx4bit

Abstract: KMM53616004BK KMM53616004BKG
Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs

KMM53616004BK

Abstract: KMM53616004BKG
Contextual Info: DRAM MODULE KMM53616004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.

Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M X 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53 61 600 4B is a 16 M x36 bits RAM high d e n sity m em o ry m odule. T he D ynam ic S am sung

Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 1 6M X 36 DRAM SIMM Using 1 6Mx4 & 1 6Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53 61 600 4B is a 16 M x36 bits RAM high d e n sity m em o ry m odule. T he D ynam ic S am sung