KP 3Z Search Results

482E

Abstract: 443Z U 4074 B 4606 fet c2039 4074
Contextual Info: WWWFASTRONGROUPCOM EEUJ Ukoknct"vq"czkcn"JDEE."rcig"62 Oqwnfgf"Kpfwevqtu *6"pqu+"5̇ *6"pqu+"5̇ 802"ocz Cnn"fkogpukqpu"kp"oo 803"ocz 3704"ocz *4"pqu+"3̇ 407 402 *4"pqu+"3̇ V{rkecn"S"xu"Htgswgpe{"*£+ V{rkecn"N"xu"Ewttgpv 2111 21111 R 2111! I 2! I 211! I

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

Contextual Info: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"/202897X1-203X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."

Contextual Info: PRELIMINARY INFORMATION L9D3256M72SBG2 L9D3256M80SBG2 18-20 Gb, DDR3, 256 M x 72/80 Integrated Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"ø"20297X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."

Contextual Info: 97/07E <:=:2BC@6 9:89 ?>E6@ @6;2G 7MIYZWMX a ljx OSEP?DEJC ?=L=>EHEPU a nG8 @EAHA?PNE? OPNAJCPD c>APSAAJ ?KEH =J@ ?KJP=?POd a /AAPEJC 8{| jqjjf jpmk NAEJBKN?A EJOQH=PEKJ a k }KNI xf k }KNI y =J@ k }KNI z ?KJBECQN=PEKJO a 5K?GAPO =R=EH=>HA a 2H=OPE? OA=HA@ =J@ @QOP LNKPA?PA@ PULAO =R=EH=>HA

Contextual Info: L9D364M64SBG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?307X"ø"20297X ‚"307X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo." 35"z"43"ocvtkz"y1"493dcnnu " ‚"Ocvtkz"dcnn"rkvej<"3022oo

TA 7698 AP

Contextual Info: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:

Contextual Info: Intel Dual CoreTM AtomTM D525 1.8GHz/N455 1.67GHz processor based Mini-ITX with DC12V input, DDR3 SDRAM, Dual display, Dual Gigabit Ethernet, Three SATA, Four COM and Six USB ports WADE-8075/76 Two USB ports 16 bits GPIO One PCI slot LVDS Intel® ICH8M Intel® D525/N455

Contextual Info: WADE-8056 Leading Intel CoreTM 2 Quad processor based Mini-ITX Board with Dual Displays and One GbE 8 bits GPIO Four USB ports LVDS Triple RS232 ports Intel® ICH8 Four SATA II ports One PCI slot LGA775 socket Intel® Q965 Mini PCI x1 slot "

Contextual Info: WADE-8556 Leading Intel CoreTM 2 Quad processor based Mini-ITX Board with Dual Displays and One GbE Four USB ports 8 bits GPIO Triple RS232 ports Mini PCI x1 slot ® Intel ICH8M Four SATA II ports One PCI slot Intel® Q965 LGA775 socket ®

diode sy 162

Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"

sj 2025

Abstract: kf 203 BN72 GE 52D 46V32 223222 F82W LXC 37 Z07N
Contextual Info: n ?a``WUf[a`e n MbWU[X[USf[a`e 562dd P_X]k kpg\ BeZi\d\ekXc OfkXip \eZf[\i D62Pz/ /z/Q/z Bk\d LNL fg\e Zfcc\Zkfi flkglk SfckX^\ flkglk J`e\ [i`m\i flkglk O\jgfej\ Qfk\d gfc\ flkglk LNL fg\e Zfcc\Zkfi flkglk k`d\ *O`j\1 SfckX^\ flkglk EXcc+ J`e\ [i`m\i flkglk

TK 9207

Abstract: 9N72 A72M kf 203 3zd1
Contextual Info: n MbWU[X[USf[a`e H AH= O = A72M: F O\jfclk`fe*N1O+ AH? Mlkglk g_Xj\ N_Xj\ [`]]\i\eZ\ f] flkglk n ?Sgf[a` Xad jagd eSXWfj yNc\Xj\ b\\g k_\j\ `ejkilZk`fej Xe[ i\m`\n k_\d Y\]fi\ lj`e^ k_`j le`k0 yNc\Xj\ fYj\im\ k_\ ZXlk`fej k_Xk ]fccfn= QSd`[`Y P\i`flj `ealip dXp i\jlck `] `ejkilZk`fej Xi\ efk ]fccfn\[0

Contextual Info: UNCONTROLLED DOCUMENT — I— PART NUMBER REV. OED— ST2832C120—TR 0, 80 [0 ,0 3 1 ] ELECTRO-OPTICAL CHARACTERISTICS TA =25’C 3 ,2 0 [0 ,1 2 6 ] r n 7 0.50 I I l _ [0 .0 7 5 ] j - E0.031H — - L 3 .5 0 CO.D20] REFLOW PRORE 0,15 [0 ,0 0 6 ] [0 .1 3 8 ]

Halbleiterbauelemente DDR

Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Contextual Info: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder

Contextual Info: B U R R -B R O W N I b DAC707 DAC708/709 I b Microprocessor-Compatible 16-BIT DIGITAL-TO-ANALOG CONVERTERS • HIGH ACCURACY: Linearity Error ±0.003% of FSR max Differential Linearity Error ±0.006% of FSR max • MONOTONIC TO 14 BITS OVER SPECIFIED TEMPERATURE RANGE

rkx ba

Abstract: ako 544 M644 M8441BBO0 MK8-4 M844 mk 6 x 544 9coy 33II MK644
Contextual Info: o Aa``WUf[a`e ? G jAVOK]O UOOZ ^RO]O SX]^\_M^SYX] KXN \O`SOa ^ROW LOPY\O _]SXQ ^RS] _XS^y jAVOK]O YL]O\`O ^RO MK_^SYX] ^RK^ PYVVYa1 + RSd`[`Y CO\SY_] SXT_\c WKc \O]_V^ SP SX]^\_M^SYX] K\O XY^ PYVVYaONy + ASgf[a` A\YN_M^ WKc LO NKWKQONw Y\ SXT_\c WKc \O]_V^ SP SX]^\_M^SYX] K\O

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

LA 7693

Abstract: lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN
Contextual Info: RN PAK-50 Low Profile 2-Piece Connectors P50L Series Low profile .276" - .472" 7-12mm mated heights to address board stacking applications Eight sizes, 20-120 contacts Hlgh-temp Insulator compatible with IR and wave soldering Low insertion/withdrawal forces

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

SC-82

Contextual Info: UMZ30K Diodes Zener diodes UMZ30K zLand size figure Unit : mm r ฦ࡝࡯࠼ߣ߽ Each lead has same dimension หኸᴺ r    r  0.05 r zFeatures 1) Ultra Small mold type. (UMD4) 2) High reliability 0.6 0.7 r 1.6 zDimensions (Unit : mm)

SC-82

Contextual Info: UMZ3.6K Diodes Zener diodes UMZ3.6K zLand size figure Unit : mm r ฦ࡝࡯࠼ߣ߽ Each lead has same dimension หኸᴺ r    r  0.05 r zFeatures 1) Ultra Small mold type. (UMD4) 2) High reliability 0.6 0.7 r 1.6

SC-82

Contextual Info: UMZ27K Diodes Zener diodes UMZ27K zLand size figure Unit : mm r ฦ࡝࡯࠼ߣ߽ Each lead has same dimension หኸᴺ r    r  0.05 r zFeatures 1) Ultra Small mold type. (UMD4) 2) High reliability 0.6 0.7 r 1.6 zDimensions (Unit : mm)

Contextual Info: UMZ5.6K UMZ5.6K Diodes Zener diodes UMZ5.6K zLand size figure Unit : mm r ฦ࡝࡯࠼ߣ߽ Each lead has same dimension หኸᴺ r    r  0.05 r zFeatures 1) Ultra Small mold type. (UMD4) 2) High reliability 0.6 0.7 r