KRA3 Search Results

kec 168

Contextual Info: KRA316KRA322 SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KRA309

Contextual Info: SEMICONDUCTOR KRA309 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PJ 1 2 Item Marking Description Device Mark PJ KRA309 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA320E

Abstract: p7 marking marking p7
Contextual Info: SEMICONDUCTOR KRA320E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking P7 No. 2000. 12. 27 Item Marking Description Device Mark P7 KRA320E hFE Grade - - Revision No : 0 1/1

marking pf 51

Abstract: KRA306
Contextual Info: SEMICONDUCTOR KRA306 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA306 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA305E

Abstract: marking pe
Contextual Info: SEMICONDUCTOR KRA305E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PE No. 2006. 4. 14 Item Marking Description Device Mark PE KRA305E hFE Grade - - Revision No : 0 1/1

KRA320

Contextual Info: SEMICONDUCTOR KRA320 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 P7 1 2 Item Marking Description Device Mark P7 KRA320 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA305

Contextual Info: SEMICONDUCTOR KRA305 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PE 1 2 Item Marking Description Device Mark PE KRA305 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking PC

Abstract: KRA303E mark pc
Contextual Info: SEMICONDUCTOR KRA303E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PC No. 2000. 12. 27 Item Marking Description Device Mark PC KRA303E hFE Grade - - Revision No : 0 1/1

marking PK

Abstract: KRA310
Contextual Info: SEMICONDUCTOR KRA310 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PK 1 2 Item Marking Description Device Mark PK KRA310 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

AB marking

Abstract: KRA352
Contextual Info: SEMICONDUCTOR KRA352 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 AB 1 2 Item Marking Description Device Mark AB KRA352 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA301

Abstract: KRA302 KRA303 KRA304 KRA305 KRA306
Contextual Info: SEMICONDUCTOR KRA301~KRA306 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M With Built-in Bias Resistors. D 2 J A Simplify Circuit Design. 3 1 G Reduce a Quantity of Parts and Manufacturing Process.

KRA304

Abstract: marking pd
Contextual Info: SEMICONDUCTOR KRA304 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PD 1 2 Item Marking Description Device Mark PD KRA304 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

p612

Abstract: KRA319
Contextual Info: SEMICONDUCTOR KRA319 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 P6 1 2 Item Marking Description Device Mark P6 KRA319 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA302

Contextual Info: SEMICONDUCTOR KRA302 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PB 1 2 Item Marking Description Device Mark PB KRA302 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA313

Contextual Info: SEMICONDUCTOR KRA313 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PO 1 2 Item Marking Description Device Mark PO KRA313 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

r2kl

Contextual Info: SEM ICONDUCTOR KRA316-KRA322 TECHNI CAL DATA EPI TAXI AL PLANAR PNP T RANSI ST OR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. F— • Simplify Circuit Design. • Reduce a Quantity o f Parts and Manufacturing Process.

A316V

Contextual Info: SEM ICONDUCTOR KRA316V-KRA322V TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATIO N FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design. DIM • Reduce a Quantity o f Parts and Manufacturing Process.

Contextual Info: SEM ICONDUCTOR KRA307E-KRA309E TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î r — • With Built-in Bias Resistors • Simplify Circuit Design DIM

070010

Contextual Info: SEMICONDUCTOR KRA316E-KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SW IT C H IN G A PPLICATION. IN TERFA CE CIR C U IT A N D DRIVER C IR C U IT A PPLIC A TIO N FEA T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KRA355

Abstract: KRA354
Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B M M FEATURES ・With Built-in Bias Resistors. D J A 2 G ・Simplify Circuit Design. 3 1 ・Reduce a Quantity of Parts and Manufacturing Process.

MARK 006

Abstract: transistor 309 pj marking KRA307 KRA308 KRA309
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. KRA307 — SEMICONDUCTOR KRA309 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors Simplify Circuit Design

IC 314E

Abstract: KRA310E KRA311E KRA312E KRA313E KRA314E
Contextual Info: SEMICONDUCTOR KRA310E~KRA314E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C 3 1 H Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA351~357 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 2 1/2

Contextual Info: SEMICONDUCTOR KRA301~KRA306 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 5 1/6