KRA31 Search Results

kec 168

Contextual Info: KRA316KRA322 SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

marking PK

Abstract: KRA310
Contextual Info: SEMICONDUCTOR KRA310 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PK 1 2 Item Marking Description Device Mark PK KRA310 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

p612

Abstract: KRA319
Contextual Info: SEMICONDUCTOR KRA319 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 P6 1 2 Item Marking Description Device Mark P6 KRA319 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA313

Contextual Info: SEMICONDUCTOR KRA313 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PO 1 2 Item Marking Description Device Mark PO KRA313 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

r2kl

Contextual Info: SEM ICONDUCTOR KRA316-KRA322 TECHNI CAL DATA EPI TAXI AL PLANAR PNP T RANSI ST OR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. F— • Simplify Circuit Design. • Reduce a Quantity o f Parts and Manufacturing Process.

A316V

Contextual Info: SEM ICONDUCTOR KRA316V-KRA322V TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATIO N FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design. DIM • Reduce a Quantity o f Parts and Manufacturing Process.

070010

Contextual Info: SEMICONDUCTOR KRA316E-KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SW IT C H IN G A PPLICATION. IN TERFA CE CIR C U IT A N D DRIVER C IR C U IT A PPLIC A TIO N FEA T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

IC 314E

Abstract: KRA310E KRA311E KRA312E KRA313E KRA314E
Contextual Info: SEMICONDUCTOR KRA310E~KRA314E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C 3 1 H Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D 2 DIM A B C D G H A ・Reduce a Quantity of Parts and Manufacturing Process.

322E

Abstract: KRA316E KRA317E KRA318E KRA319E KRA320E KRA321E KRA322E
Contextual Info: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process.

KRA316V

Abstract: KRA317V KRA318V KRA319V KRA320V KRA321V KRA322V
Contextual Info: SEMICONDUCTOR KRA316V~KRA322V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. G 1 3 K H A D 2 Reduce a Quantity of Parts and Manufacturing Process.

A314

Abstract: A310 A311 KRA310 KRA311 KRA312 KRA313 KRA314 A314 j
Contextual Info: KOREA ELECTRONICS CO.,LTD. KRA310KRA314 SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

transistor D 322

Abstract: kec 168 transistor marking P8 A316 KRA316 KRA317 KRA318 KRA319 KRA320 KRA321
Contextual Info: KOREA ELECTRONICS CO.,LTD. KRA316KRA322 SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

KRA316

Abstract: KRA317 KRA318 KRA319 KRA320 KRA321 KRA322
Contextual Info: SEMICONDUCTOR KRA316~KRA322 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B M M ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. J A TYPE NO. OUT R1 R2 R1 kή

Contextual Info: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA310E~KRA314E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D A G 2 C H ・Reduce a Quantity of Parts and Manufacturing Process.

1pm1

Abstract: KRA311 marking PM
Contextual Info: SEMICONDUCTOR KRA311 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PM 1 2 Item Marking Description Device Mark PM KRA311 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking p2

Abstract: KRA316E P2 marking
Contextual Info: SEMICONDUCTOR KRA316E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking P2 No. 2000. 12. 27 Item Marking Description Device Mark P2 KRA316E hFE Grade - - Revision No : 0 1/1

KRA317

Contextual Info: SEMICONDUCTOR KRA317 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 P4 1 2 Item Marking Description Device Mark P4 KRA317 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking PK

Abstract: KRA310E
Contextual Info: SEMICONDUCTOR KRA310E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PK No. 2000. 12. 27 Item Marking Description Device Mark PK KRA310E hFE Grade - - Revision No : 0 1/1

IC 314E

Abstract: KRA313E KRA314E KRA310E KRA311E KRA312E
Contextual Info: SEMICONDUCTOR KRA310E~KRA314E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA316V~KRA322V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES 2008. 11. 20 Revision No : 2 1/6

Contextual Info: SEMICONDUCTOR KRA310~KRA314 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 29 Revision No : 4 1/4

Contextual Info: SEMICONDUCTOR KRA316E~KRA322E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES 2008. 11. 20 Revision No : 2 1/6