KSB834 Search Results

Contextual Info: KSB834W KSB834W LOW Frequency Power Amplifier • Complement to KSD880W 1 D2-PAK 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter

Contextual Info: KSB834 PNP SILICON EPITAXIAL TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • C om plem ent to KSD880 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit C ollector-B ase Voltage V cbO - 60 C ollector-E m ltter Voltage VcEO - 60 V V Em itter-Base Voltage

KSD880Y

Contextual Info: KSD880 KSD880 Low Frequency Power Amplifier • Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

KSB834

Abstract: KSD880 CDC-5
Contextual Info: KSB834 KSB834 LOW Frequency Power Amplifier • Complement to KSD880 TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60 Units

Contextual Info: KSB834W KSB834W Low Frequency Power Amplifier • Complement to KSD880W D2-PAK 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 60

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD880 LOW FREQUENCY POWER AMPLIFIER • C om plem ent to KSB834 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic VcBO Sym bol 60 V C ollector-E m itter Voltage VcEO 60 V Em itter-Base Voltage V ebo

KSD880W

Abstract: D2PAK1 KSB834W
Contextual Info: KSB834W KSB834W Low Frequency Power Amplifier • Complement to KSD880W D2-PAK 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60

KSD880W

Abstract: KSB834W
Contextual Info: KSB834W KSB834W LOW Frequency Power Amplifier • Complement to KSD880W D2-PAK 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60

Contextual Info: KSB834 KSB834 LOW Frequency Power Amplifier • Complement to KSD880 1 TO-220 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter - 60

KSD880W

Contextual Info: KSB834W KSB834W Low Frequency Power Amplifier • Complement to KSD880W D2-PAK 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60

Contextual Info: KSB834 KSB834 Low Frequency Power Amplifier • Complement to KSD880 TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60 Units

Contextual Info: KSD880 NPN EPITAXIAL SILICON TRANSISTOR LOW FR EQ U EN C Y POW ER AMPLIFIER TO -220 • Com plem ent to KSB834 A BSO LU TE MAXIMUM RATINGS C h a ra cte ris tic Rating Sym bol Unit C o lle c to r-B a s e V oltag e V cbo 60 V C o lle cto r-E m itte r V oltag e

kse2

Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.5 TO-220 Type T ransisto rs le A VcEO (V) 3 60 Device Type 6 7 (A) 3 MIN MAX 10 50 lc (A) 3 200 3 0.3 10 C ondition f T(MHz) Pc (W) KSD880 KSB834 5 0.5 60 4 0.5 500 2 0.05 1 12 02 4 3 10 3 0.6 1.2 10 0.5 3 40 PNP 60 BD241A

HD880

Abstract: HB834 KSB834
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON 对应国外型号 KSB834 HB834 █ 主要用途 TRANSISTOR █ 外形图及引脚排列 低频功率放大，伴音帧输出及电源调整 与 HD880 互补 TO-220 █ 极限值（Ta=25℃） T stg ——贮存温度………………………………… -55~150℃

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD880 LOW FREQUENCY POWER AMPLIFIER T O -2 2 0 • Complement to KSB834 ABSOLUTE MAXIMUM RATINGS Ta=25°C C haracteristic Rating Unit 60 60 7 3 0 .3 30 150 -5 5 ~ 1 5 0 V V V A A W “C °C Symbol Collector-Base Voltage

KSB834

Abstract: KSD880
Contextual Info: KSB834 KSB834 Low Frequency Power Amplifier • Complement to KSD880 TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 60 Units

KSB834

Abstract: KSD880
Contextual Info: KSB834 PNP SILICON EPITAXIAL TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • C o m p le m e n t to K S D 8 8 0 A BSOLUTE M AXIMUM RATINGS Characteristic Sym bol Rating Unit C o lle c to r-B a s e V o lta g e V cB O - 60 V C o lle c to r-E m ltte r V o lta g e

tip32C samsung

Abstract: KSB595 BD241A BD241B BD242A KSB834 KSC1983 KSD880 TIP31A TIP31B
Contextual Info: SAMSUNG ELECTRONICS INC bOE T> • TTbMlME GG11S33 T3T « S U G K TRANSISTORS FUNCTION GUIDE 2.1.5 TO-220 Type Transistors lc Device Type Veto A (V) 3 60 5 7 Condition MIN MAX TIP32A 4 3 10 50 3 0.375 K SD 8 8 0 KSB834 5 0.5 60 200 3 0.3 4 0.5 500 2 0.05

LB 122 transistor

Contextual Info: KSB834 PNP SILICON EPITAXIAL TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 • Complement to KSD880 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitier Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation T a=2 5 T ;

Contextual Info: KSB834 PNP SILICON EPITAXIAL TRANSISTOR LOW FREQUENCY POWER AMPLIFIER T O -220 • Complement to KSD880 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta= 2 5 ° C

KSB834

Abstract: KSD880
Contextual Info: KSD880 KSD880 Low Frequency Power Amplifier • Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Contextual Info: KSD880 KSD880 Low Frequency Power Amplifier • Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Contextual Info: KSB834 PNP SILICON EPITAXIALTRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD880 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol - 60 V Collector-Emitter Voltage VcEO - 60 V Emitter-Base Voltage vEB0 -7

KSB1149

Abstract: KSB1150 KSB834 KSD880 Vec-30V
Contextual Info: SAMSU NG S E M I C O N D U C T O R .INC ; 4 . IME D | TlbMlMa D007522 T . . KSB834 PNP SILICON EPITAXIAL TRANSISTOR -S. T - 3 3 - /? LOW FREQUENCY POWER AMPLIFIER • Complement to KSD880 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic