KSC3 Search Results

KSA1243

Abstract: KSC3073
Contextual Info: KSC3073 KSC3073 Power Amplifier Application • Complement to KSA1243 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 30 Units

KSC3488

Contextual Info: KSA1378 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSC3488 • Collector Dissipation: PC= 300mW ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

STO-23

Contextual Info: KSA1298 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER • Complement to KSC3265 STO-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation

Contextual Info: KSA1304 KSA1304 Vertical Output Applications Power Amplifier Applications • Complement to KSC3296 TO-220F 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Ratings

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

Contextual Info: KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB TYP. at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

C3503D

Abstract: 2sc3503 c3503e C3503C 2SC3503D 2SC3503F c3503-d 2sc3503 spice
Contextual Info: 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V

Contextual Info: KSA1243 KSA1243 Power Amplifier Applications • Complement to KSC3073 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings - 30

Contextual Info: KSC3569 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cb O Symbol 50 0 V Collector Emitter Voltage

Contextual Info: KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB TYP at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSC3074 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER SWITCHING • Complement to KSA1244 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcBO 60 V Collector Emitter Voltage V ceo 50 V Emitter Base Voltage V ebo 5 V Base Current

Contextual Info: KSC3120 NPN EPITAXIAL SIL IC O N T R A N SIST O R MIXER FOR UHF TV TUNER SOT-23 G c E = 1 7 d B T Y P Cr. = 0.6pF (TYP) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current

Contextual Info: KSC3503 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)7 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.320

KSC3953

Contextual Info: KSC3953 KSC3953 CRT Display Video Output • High Current Gain Bandwidth Product : fT=400MHz Typ. • High Collector-Emitter Voltage : VCEO=120V • Low Reverse Transfer Capacitance : Cre=1.7pF(Typ.) TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor

KSC3503

Contextual Info: KSC3503 KSC3503 CRT Display, Video Output • High Voltage : VCEO=300V • Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30V TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSA1243

Abstract: KSC3073
Contextual Info: KSC3073 KSC3073 Power Amplifier Application • Complement to KSA1243 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units

K 3115

Abstract: transistor k30 KSC3125 KSC388 PC G 3115 samsung tv A12W k20a samsung tv test FC
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC3125 14E D J ? cl b m 4 a OOO^^S 1 NPN EPITAXIAL SILICON TRANSISTOR T-31-1B TV FINAL PICTURE AMPLIFIER APPLICATION SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Cottector-Emitter Voltage Emitter-Base Voltage

HE2V

Contextual Info: KSA1243 PNP EPITAXIAL SILICON TRANSISTOR POW ER AMPLIFIER APPLICATIONS • Complement to KSC3073 A B S O LU T E MAXIMUM RATINGS Rating Unit Collector Base Voltage VcBO -30 V Collector Emitter Voltage V cEO V Emitter Base Voltage Base Current Collector Current

Contextual Info: KSC3233 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR HIGH SPEED SWITCHING • Low Collector Emitter Saturation Voltage • High Speed Switching: t = V S (MAX , lc = 0.8A • Collector Emitter Voltage: VCE0 = 400V ABSO LU TE MAXIMUM RATINGS -Characteristic

Contextual Info: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Switching . Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage VcBO 1100 V VcEO 800 V Emitter Base Voltage Collector Current DC

GE-205

Contextual Info: KSC3503 NPN EPITAXIAL SILICON TRANSISTOR CRT DISPLAY, VIDEO OUTPUT TO-126 • High Voltage : V Ce o = 3 0 0 V • Low Reverse Transfer Capacitance : Cre=1 8pF at V Cb = 3 0 V ABSO LU TE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage

a1241

Abstract: k 1241 transistor SA1241
Contextual Info: KSC3076 NPN EPITAXIAL SILICO N TRANSISTOR POW ER AM PLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K S A 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage Symbol VcBO 50 V Collector Emitter Voltage