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    KSD1692 Search Results

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    KSD1692 Price and Stock

    onsemi KSD1692YS

    TRANS NPN DARL 100V 3A TO126-3
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    Avnet Americas KSD1692YS Bulk 0 Weeks, 2 Days 2,451
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    Mouser Electronics KSD1692YS 2,085
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    Verical KSD1692YS 1,725 1,228
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    Rochester Electronics KSD1692YS 1,725 1
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    Fairchild Semiconductor Corporation KSD1692YS

    Power Bipolar Transistor, 3A, 100V, NPN, TO-126, Plastic/Epoxy, 3 Pin
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    Rochester Electronics KSD1692YS 17 1
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    KSD1692 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSD1692 Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    KSD1692 Fairchild Semiconductor NPN SILICON DARLINGTON TRANSISTOR Scan PDF
    KSD1692 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSD1692 Samsung Electronics NPN (HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C) Scan PDF
    KSD1692 Samsung Electronics Transistor Function Guide Scan PDF
    KSD1692G Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    KSD1692G Samsung Electronics TRANS DARLINGTON NPN 100V 3A 3TO-126 Scan PDF
    KSD1692O Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    KSD1692O Samsung Electronics TRANS DARLINGTON NPN 100V 3A 3TO-126 Scan PDF
    KSD1692Y Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    KSD1692Y Samsung Electronics TRANS DARLINGTON NPN 100V 3A 3TO-126 Scan PDF
    KSD1692YS Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF

    KSD1692 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSD1692

    Abstract: No abstract text available
    Text: KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF KSD1692 O-126 KSD1692

    BDX548

    Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
    Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8


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    PDF O-126 KSD985 KSD986 KSD1692 BD675A BD677A KSE800 KSE801 MJE800 TIP146 BDX548 KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF KSD1692 O-126 PW10ms, Cycle50%

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSD1692 TRANSISTOR NPN TO – 126 FEATURES z High DC Current Gain z Low Collector Saturation Voltage z High Power Dissipation 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF O-126 KSD1692 4K-12K 6K-20K

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC DURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C TO-126 • HIGH POWER DISSIPATION: PC = 1.3W TA=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage


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    PDF KSD1692 O-126 Cycle50%

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF KSD1692 O-126

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2k h(FE) Max. Current gain.20k


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    PDF KSD1692

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


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    PDF Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original
    PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    transistor bc 209 npn

    Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
    Text: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )


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    PDF KSD1692 O-126 PWC10 KSD5000 IC-5V--54B2 L-50OiM 0007b3? transistor bc 209 npn transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC DURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C TO-126 HIGH POW ER DISSIPATION : Pc = 1.3W TA= 25t ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage


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    PDF KSD1692 O-126 10iBs dutyCycleS50%

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC DURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C • HIGH PO W ER DISSIPATIO N : Pc = 1.3W TA=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic


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    PDF KSD1692

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C T O -1 2 6 HIGH POWER DISSIPATION : PT = 1.3W T .= 25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage


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    PDF KSD1692

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC DURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C TO-126 • HIGH POWER DISSIPATION: Pc = 1.3W TA=25°C ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector- Base Voltage Rating


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    PDF KSD1692 O-126

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


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    PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    ksd 180

    Abstract: ksd 180/60 ksd 250 se130 tip142
    Text: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)


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    PDF KSC2682 KSC3502 KSC3503 KSC3953 KSC2258 KSC2258A KSC5036 KSC2688 KSC5035 KSC5034 ksd 180 ksd 180/60 ksd 250 se130 tip142

    KSD201

    Abstract: kse800 KS01692 KSE703 KSA1304 KSA1614 KSB1015 KSB1366 KSC3296 KSD1273
    Text: SAMSUNG E L E C T R O N I C S INC bOE D • 7 cíbmM5 TRANSISTORS 2.1.6 0011S3M 67b ■ SMfiK FUNCTION GUIDE T0-220 F Type Transistors Device Type VcEO (A) <V) 1.5 150 3 55 NPN KSC3296 W MIN KSA1304 10 0.5 40 KSA1614 5 0.5 40 PNP Condition *>FE VcE<s«tXV)


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    PDF T0-220 KSC3296 KSA1304 KSA1614 KSD1406 KSB1015 KSD2012 KSB1366 KSD1273 KSD1944 KSD201 kse800 KS01692 KSE703 KSD1273

    Untitled

    Abstract: No abstract text available
    Text: FUNCTION GUIDE TRANSISTORS 2.1.6 T0-220 F Type Transistors Device Type (A) (V) 1.5 150 3 55 NPN KSC3296 Condition Condition hFE •e V ce (V) (A) M IN KSA1304 10 0.5 40 KSA1614 5 0.5 40 240 PNP M AX lc (A) Ib (A) 75 0.5 0.05 VciKsatKV) TYP Condition M AX


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    PDF T0-220 KSC3296 KSD1406 KSD2012 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 KSC3158

    D880 voltage regulator

    Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5


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    PDF OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180