KST40 Search Results

STJ828EF

Abstract: kst40
Contextual Info: STJ828EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.

datasheet 4019

Abstract: Junction-FET 4019 data STK596K kst40 SOT-623
Contextual Info: STK596K Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information

"marking j9"

Abstract: SOT-623 IC 4015 STJ828K kst40 sot623 marking j9 marking kst
Contextual Info: STJ828K Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.

DN030E

Abstract: Transistor IC 4009 DATASHEET Datasheet ic 4009 4009 kst40 4009 be 4009 NOT GATE IC in 4009 N01 marking
Contextual Info: DN030E Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030E • Switching Application

ZLDQ250A

Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Contextual Info: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513

2SC5343EF

Abstract: Transistor 2SA1980EF kst40 KST-4004-004
Contextual Info: 2SC5343EF Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980EF Ordering Information

DATA SHEET IC 4011

Abstract: IC 4011 4011 IC data sheet 4011 ic 4011 4011 analog IC 4011 equivalent ic 4011 datasheet SOT-623F 4011 datasheet
Contextual Info: STK1828K Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed. Ordering Information Type NO.

Contextual Info: 2SC5345EF Semiconductor NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz Typ. , [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain

Contextual Info: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

IC 4012 DATASHEET

Abstract: datasheet 4012 STK1828EF KST-4012-000 kst40
Contextual Info: STK1828EF Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • 2.5V Gate drive. • Low threshold voltage : Vth = 0.5~1.5V. • High speed. Ordering Information Type NO.

DP030E

Abstract: Transistor DN030E kst40
Contextual Info: DP030E Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC /IB =-100mA/-10mA) • Suitable for low voltage large current drivers • Complementary pair with DN030E • Switching Application

DN030E

Abstract: DP030E KST-4010-000 kst40
Contextual Info: DP030E Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030E

STC918E

Abstract: kst40 marking code GNF
Contextual Info: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

2SA1980EF

Abstract: Transistor 2SC5343EF kst40
Contextual Info: 2SA1980EF Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343EF Ordering Information

ic 4001

Abstract: 2SA1980E 2SC5343E KST-4001-002 kst40
Contextual Info: 2SA1980E Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343E Ordering Information

data sheet of ic 4018

Abstract: ic 4018 4018 datasheet STK596EF 4018 6 pin marking kst kst40
Contextual Info: STK596EF Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information

IC 4013

Abstract: ic 4013 DATASHEET 4013 DATASHEET 4013 4013 IC DATA SHEET data sheet IC 4013 2SA1980 2SC5343 SUT509EF kst40
Contextual Info: SUT509EF Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General purpose transistor Feature • Both 2SA1980 chip and 2SC5343 chip in SOT-563F package Ordering Information Type NO. SUT509EF Marking 3X Package Code SOT-563F Outline Dimensions

kst tuner

Abstract: marking code GNF STC918K kst40
Contextual Info: STC918K Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

2SC5345EF

Abstract: Transistor ic 4017 data sheet IC 4017 4017 IC 4017 DATASHEET ic ct 4017 free download datasheet IC 4017 transistor 4017 datasheet 4017 equivalent
Contextual Info: 2SC5345EF Semiconductor NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz Typ. , [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain

Contextual Info: DP030E Semiconductor PNP Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = - 0.15V Typ. @IC / I B = - 100m A/ - 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DN030E

Contextual Info: DN030E Semiconductor NPN Silicon Transistor Features • Ext rem ely low collect or- t o- em it t er sat urat ion volt age VCE( SAT = 0.1V Typ. @IC / I B = 100m A/ 10m A) • Suit able for low volt age large current drivers • Com plem ent ary pair wit h DP030E