KST55 Search Results

Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N5551 SOT23

Abstract: KST5551
Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

l01b

Abstract: KST5550 Collector 5v npn TRANSISTOR
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST5550 HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Sym bol

KST55

Abstract: KST56
Contextual Info: KST55/56 KST55/56 Driver Transistor • Collector-Emitter Voltage: VCEO = KST55: - 60V KST56: - 80V • Collector Dissipation: PC max = 350mW • Complement to KST05/06 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KST5550

Abstract: marking 1F
Contextual Info: KST5550 KST5550 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage : KST55 : KST56 Collector-Emitter Voltage : KST55 : KST56 Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Emitter Voltage: VCEO=160V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56

2N5551

Abstract: KST5551
Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Dissipation: PC max =625mW 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Value

2N5551

Abstract: KST5551
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST5551 AMPLIFIER TRANSISTOR S O T-23 • C ollector-E m itter Voltage: V C e o = 1 6 0 V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-Base Voltage

KST2222A

Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking V ce ! PNP lc h FE (V) (A) (V) KST06(1G) KST56(2G) 80 0.5 1 100 50 KST05(1H) KST55(2H) 60 0.5 1 100 50 KST2907A92F)

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25t: Sym bol C haracteristic Collector Base Voltage Rating U nit -60 -80 V VcBO :KST55 :KST56 Collector-Em itter Voltage V VcEO :KST5S :KST56 Emitter-Base Voltage Collector Current

2g marking code

Abstract: KSP55 KST55 KST56 2H2G
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST55/56 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage Rating Unit -60 -80 V -60 -80 -4 -500 350 150 V mA mW °C 357 °C /W VcBO : KST55 : KST56 C ollector-E m itter Voltage

KST5550MTF

Contextual Info: KST5550 KST5550 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO

1g marking

Contextual Info: KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC max = 350mW • Complement to KST55/56 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KST05

Abstract: KST06
Contextual Info: KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC max = 350mW • Complement to KST55/56 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Emitter Voltage: VCeo=1 60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

kst5550

Contextual Info: KST5550 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS {TA=25t S ym b o l C h a ra c te ristic C o llecto r-B ase Voltage Coltector-Em itter Voltage Em itter-Base Voltage C o lle cto r Current C o lle cto r D issipation

KST05

Abstract: KST06
Contextual Info: KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Dissipation: PC max = 350mW • Complement to KST55/56 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

mark G1 SOT-23

Abstract: 2N5551 g1 2N5551 KST5551
Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KST55

Abstract: 2H2G mark 2H SOT-23 KSP55 KST56
Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -80 V V VEBO IC PC T STG -60 -80 -4 -500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST55 :KST56

Contextual Info: KST5550 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage Rating Unit -6 0 -8 0 V V -6 0 -8 0 -4 -5 0 0 350 150 V V V mA mW °C 357 °CW V cB O KST55 KST56 Collector-Emitter Voltage