KTA1271 Search Results

transistor a1271

Abstract: KTC3203 Y A1271 KTC3203 A1271 Y A1271 transistor ktC3203 y transistor KTA1271 lb25-1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3203 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to KTA1271. RATING UNIT Collector-Base Voltage V CBO 35 V Collector-Emitter Voltage V CEO 30 V Em itter-Base Voltage V ebo 5 V Collector Current

Contextual Info: SEMICONDUCTOR KTC3203A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C A ・Complementary to KTA1271A N MAXIMUM RATING Ta=25℃ RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTA1271 TRANSISTOR PNP 1.EMITTER FEATURES z High DC Current Gain z Complementary to KTC3203 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ktA1271 Y

Contextual Info: SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ᴌHigh hFE : hFE=100ᴕ320. A ᴌComplementary to KTC3203. N E K J MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G D SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ・High hFE : hFE=100～320. A ・Complementary to KTC3203A. N E K MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

ktc3203 transistor

Abstract: KTA1271 KTC3203 KTC3203 Y
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3203 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to KTA1271. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 35 V

KTC3203A

Abstract: KTA1271A KTA1271
Contextual Info: SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B ・High hFE : hFE=100～320. C A ・Complementary to KTC3203A. N K MAXIMUM RATING Ta=25℃ G SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

a1271

Abstract: A1271Y A1271 Y transistor a1271 ktA1271 Y A-1271 k a1271 KTA1271 A1271 transistor DSA00105284
Contextual Info: SEMICONDUCTOR KTA1271 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 1 No. 2005. 6. 9 816 2 A1271 3 Y 4 Item Marking Description KEC K KEC CORPORATION Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week Device Name A1271

KTA1271Y

Contextual Info: KTA1271 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE High DC Current Gain Complementary to KTC3203 1 Emitter 2 Collector 3 Base CLASSIFICATION OF hFE 1

KTC3203 Y

Abstract: KTC3203 ktc32 ktA1271 Y
Contextual Info: KTC3203 NPN TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 V VEBO

KTA1271

Abstract: KTC3203 Y KTC3203 ktc3203 transistor transistor ktc3203 ktC3203 y transistor KTA1271 transistor
Contextual Info: SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C ᴌHigh hFE : hFE=100ᴕ320. A ᴌComplementary to KTC3203. N E K MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G J D SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3203 TRANSISTOR NPN TO-92 FEATURES z Complementary to KTA1271 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value

Contextual Info: FORWARD INTERNAHONAL ELECTRONICS LID . KTA1271 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SIUCON TRANSISTOR HIGH CURRENT APPUCATION FEATURES ♦H igh H fe:H fe= 100-320 * C om plem entary to K TC 3203 ABSOLUTE MAXIMUM RATINGS at Tamb=25°C Characteristic Symbol Rating

Contextual Info: SEMICONDUCTOR KTC3203 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C A ・Complementary to KTA1271. N K MAXIMUM RATING Ta=25℃ RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

KTC3203A

Abstract: KTA1271A KTA1271
Contextual Info: SEMICONDUCTOR KTC3203A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C A ・Complementary to KTA1271A N MAXIMUM RATING Ta=25℃ RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage

ktc3203 transistor

Abstract: KTC3203 Y KTA1271 KTC3203 ktC3203 y transistor 35VCEO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3203 TRANSISTOR NPN TO-92 FEATURES z Complementary to KTA1271 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Units

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 KTC3203 Features • • • • General Purpose Application Switching Application Excellent hFE Linearity: hFE 2 =35(Min. ) at V CE=1.0V, IC=700mA Complementary to KTA1271

Contextual Info: SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES 2010. 1. 28 Revision No : 1 1/2

KTA1271

Abstract: ktA1271 Y KTC3203
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1271 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • High Iife : 1ife=100 —320. • Complementary to KTC3203. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

KTC3203

Abstract: ktc3203 transistor KTA1271 KTC3203 Y
Contextual Info: SEMICONDUCTOR KTC3203 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C A ᴌComplementary to KTA1271. N MAXIMUM RATING Ta=25ᴱ RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V H F F V

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

KTC3203Y

Abstract: KTC3203 KTC3203 Y ktc32 Transistor hFE CLASSIFICATION Marking CE KTA1271 y KTC3203-O ktC3203 y transistor npn transistor to 92 KTA1271
Contextual Info: MCC TM Micro Commercial Components KTC3203-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3203-Y Features • • • • General Purpose Application Switching Application Excellent hFE Linearity: hFE 2 =35(Min. ) at V CE=1.0V, IC=700mA

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250