KTJ6 Search Results

Contextual Info: SEMICONDUCTOR KTJ6131E TECHNICAL DATA P CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B -1.5V. MAXIMUM RATING Ta=25 H G 2 A DIM A B D 3 1 C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D

KTJ6131E

Abstract: Marking EB
Contextual Info: SEMICONDUCTOR KTJ6131E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking EB No. 2004. 2. 11 Item Marking Description Device Mark EB KTJ6131E Revision No : 0 1/1

KTJ6131E

Contextual Info: SEMICONDUCTOR KTJ6131E TECHNICAL DATA P CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=-0.5～-1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

KTJ6131V

Contextual Info: SEMICONDUCTOR KTJ6131V TECHNICAL DATA P CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=-0.5～-1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTJ6131V TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2011. 7. 12 Revision No : 0 1/3

Contextual Info: SEMICONDUCTOR KTJ6164S TECHNICAL DATA P CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=-0.5～-1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.

Contextual Info: SEMICONDUCTOR KTJ6164S TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2003. 9. 19 Revision No : 1 1/3

ktj6

Contextual Info: KTJ6164S SEMICONDUCTOR P CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B L L H A 2 3 1 CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage VGSS B C 1.30+0.20/-0.15

TH05

Contextual Info: S EM IC O N D U C T O R KTJ6164S TECHNI CAL DATA P CHANNEL MOS FIELD EFFECT TRANSISTOR U LTR A -H IG H SPEED SW ITC H IN G A PPLIC A T IO N S A N A L O G SW ITCH A PPL IC A T IO N S FEA TU R ES L B L DIM • 2.5 G ate Drive. • Low T hreshold V oltage : V th=-0.5

KTJ6131E

Abstract: ktj6
Contextual Info: KTJ6131E SEMICONDUCTOR P CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS E B -1.5V. MAXIMUM RATING Ta=25 G 2 3 1 H A DIM A B D C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

kn59-148

Abstract: KN-59-148
Contextual Info: DASH NO. M CODE MADE FROM STAMP: KINGS KN-59-148 NOTES: 1. FOR USE WITH RG-58, 58A, 58C, 141 it 141A/U CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-415. 3. FOR CABLE TRIMMNIG USE KTJ-65 & KTD-38. 4. FOR CRIMPING USE DIE KTH-2061. 5. FOR POSITIONING OF CENTER CONTACT USE KTP-3.

Contextual Info: DASH NO. M CODE MADE FROM REVISIONS GSD ch an ges CN 33094 C REDRAWN WJM 06/07/91 I CJ1 CO I rxj ho .03 D. REF., 3 HOLES NOTES: 1. FOR USE WITH 55, 142 & RG-223 CABLE GROUPS. 2. FOR CABLING INSTRUCTIONS SEE CP-415. 3. FOR CABLE TRIMMNIG USE KTJ-65 & KTD-38.

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

Contextual Info: SD REVISIONS CN 37765 C REDRAWN HVN 01/20/99 O I <_n co I OJ cn CX NOTES: 1. FOR USE WITH RG-59, 59A. 59B, 62. 62A. 62C & 210/U CABLE. KC59358S 2. FOR CABLE TRIMMING USE KTJ-62 & KTD-96. 4:1 3. FOR CRIMPING USE DIE KTH 2002. sc a le 4. FOR CABLING INSTRUCTIONS SEE CP-420.

Contextual Info: DASH NO. M CODE MADE FROM 1.44 REF. NOTES: 1. FOR USE WITH 55, 142 RG-223 CABLE GROUPS. 2. FOR CABLING INSTRUCTIONS SEE CP-415. 3. FOR CABLE TRIMMNIG USE KTJ-65 & KTD-38. 4. FOR CRIMPING USE DIE KTH-2001. 5. FOR POSITIONING OF CENTER CONTACT USE KTP-5. 6. INTERFACE PER MIL-STD-348, FIG. 304-1.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

KN-59-148

Abstract: KTJ-65 CP-415 KTD-38 kn59-148
Contextual Info: DASH NO. M CODE MADE FROM 1.48 REF. NOTES: 1. FOR USE WITH RG-58, 58A, 58C. 141 k 141A/U CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-415. 3. FOR CABLE TRIMMNIG USE KTJ-65 k KTD-38. 4. FOR CRIMPING USE DIE KTH-2061. 5. FOR POSITIONING OF CENTER CONTACT USE KTP-3.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

KC-59-358

Contextual Info: SD REVISIONS CHANGES CN 37765 C REDRAWN HVN 01/20/99 O I cn CO I OsJ cn oo STAMP: KINGS KC-59-358 NOTES: 1. FOR USE WITH RG-59, 59A, 59B» 62, 62A, 62C à 210/U CABLE. KC59358S 2. FOR CABLE TRIMMING USE KTJ-62 à KTD-96. 4:1 3. FOR CRIMPING USE DIE KTH 2002.

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

KN-59-148

Contextual Info: DESCRIPTION H ER31973 BY APPD DATE DCAM REV KPL 04/12/11 NOTES: UNLESS OTHERWISE SPECIFIED 1. FOR USE WITH RG-58, 58A, 58C, 141 & 141A/U-CABLE. 2. FOR CABLING INSTRUCTIONS SEE CP-415. 3. FOR CABLING TRIMMING USE KTJ-65 & KTD-38. 4. FOR CRIMPING USE DIE KTH-2061.