KULICKE SOFFA Search Results

guardian 1345

Abstract: Digicipher part number GI 956 Commscope
Contextual Info: SCHEDULE 14A Rule 14a-101 INFORMATION REQUIRED IN PROXY STATEMENT SCHEDULE 14A INFORMATION Proxy Statement Pursuant to Section 14(a) of the Securities Exchange Act of 1934 (Amendment No. ) Filed by the Registrant
Filed by a Party other than the Registrant

application note 979

Abstract: ABLESTIK 71-2 handling of beam lead diodes HP 9301
Contextual Info: miltm HP AE WC KLAERT DT * What GaAs Beam Lead Schottky Barrier Ring and Bridge D iodes Technical Data HSCH-9301 HSCH-9351 Features HSCH-9301 Junction Side Up • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance

Contextual Info: • 4 4 4 7 5 6 4 D D D 1 70 1 5TD ■ H P A HEWLETT-PACKARD/ CHPNTS fj&fll H E W L E T T 1"MM PACKARD blE » Beam Lead PIN Diode Technical Data 5082-3900 Features • H igh B reak d o w n V oltage 200 V Minimum • Low C ap acitan ce 0.02 pF Typical • R ugged C o n stru ctio n

accretech UF3000

Abstract: UF3000 P12xl accretech P12x UF3000 accretech UG-1214/U Micronics N9201A
Contextual Info: Agilent N9201A Array Structure Parametric Test Option Technical Overview Introduction The decreasing size of features on integrated circuits 45 nm and smaller is driving the need for new parametric test capabilities. These capabilities must accommodate the advanced test

Contextual Info: •I 4447564 Q 0 0 tlbD4 02^ ■ H P A HEIilLETT-PACKAR] / CMPNTS m,~m LIE I HEWLETT mPrM D A HKion GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold T ri-M etal System For Improved Reliability • Low C ap acitan ce

outsourcing IBM

Abstract: avnet celestica flextronics national semiconductor CC
Contextual Info: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources

IR712

Abstract: ABLESTIK 71-2
Contextual Info: H EW L E T T wLTM PA CK A R D GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation

Contextual Info: What HEWLETT mL'HM P A C K A R D B eam L ead PIN D iode Technical Data 5082-3900 Features • H igh B reak d o w n Voltage 200 V Minimum • Low C apacitance 0.02 pF Typical • R ugged C o n stru ctio n 2 grams Minimum Lead Pull • N itrid e P assiv ated

Contextual Info: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description

Contextual Info: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description

Bridge diodes

Contextual Info: Whal HEWLETT iL'ttM PACKARD GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 F eatu res • Gold Tri-M etal System For Improved Reliability • Low C ap acitan ce • Low S eries R esistan ce • H igh C utoff F req u en cy

application note 979

Abstract: 9351 HSCH-9301 HSCH9351 HSCH-9351 ABLESTIK 71-2
Contextual Info: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description

hughes welder

Abstract: beam lead pin diode
Contextual Info: X !ñ BEAM LEAD PIN DIODE HEWLETT PACKARD HPND-4005 HPND-4005TXV Features HIGH BREAKDOWN VOLTAGE 120V Typical LOW CAPACITANCE 0.017 pF Typical LOW RESISTANCE 4.70 Typical RUGGED CONSTRUCTION 4 Grams Minimum Lead Pull 7 Z O /M .3 \ NITRIDE PASSIVATED 1 t i

ultrasonic probe ge

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Contextual Info: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes

bluetooth test mode

Abstract: 32KHZ CAT25C02 CX72303 PC16550D SiW1502 XE1401 XE1402 XE1402I069TRLF XE1413
Contextual Info: XE1402 MOSI NSS SCK SPI CLK_IN Bluetooth RADIO_TYPE Sequencer NRESET MISO Memory Radio RF_IN[3:0] Interface RF_OUT[6:0] VDD_PAD UA_TX UA_RX UART CTS Power Mgmt VDD_REG VDD_IO VDD_IO_DIG VDDD RTS VSSD1 XE1402 Ultra low power Bluetooth Baseband Controller

CRYSTAL-16

Abstract: 16550 VQFN40
Contextual Info: XE1402 MOSI NSS SCK SPI CLK_IN Bluetooth RADIO_TYPE Sequencer NRESET MISO Memory Radio RF_IN[3:0] Interface RF_OUT[6:0] VDD_PAD UA_TX UA_RX UART CTS VDD_REG Power Mgmt VDD_IO VDD_IO_DIG VDDD RTS VSSD1 XE1402 Ultra low power Bluetooth Baseband Controller

schematic diagram bluetooth headset

Abstract: LQFP48 LAND PATTERN block diagram bluetooth headset bluetooth sensor 32KHZ CX72303 LQFP48 SiW1502 SKY72313 XE1401
Contextual Info: XE1401 Memory MOSI NSS SPI SCK Bluetooth RADIO_TYPE Sequencer MISO UA_TX UA_RX UART CTS CLK_IN Radio Interface NRESET RF_IN[3:0] RF_OUT[6:0] RTS VDD_PAD PCM_DIN MCLK PCM_DOUT Audio Port VDD_REG Power Mgmt VDD_IO VDD_IO_DIG BCLK VDDD FSYNC VSSD1,2,3 XE1401

schematic diagram bluetooth headset

Abstract: bluetooth headset schematic schematic diagram of bluetooth 4.0 headset
Contextual Info: XE1401 Memory MOSI NSS SPI SCK Bluetooth RADIO_TYPE Sequencer MISO UA_TX UA_RX UART CTS CLK_IN Radio Interface NRESET RF_IN[3:0] RF_OUT[6:0] RTS VDD_PAD PCM_DIN MCLK PCM_DOUT Audio Port Power Mgmt VDD_REG VDD_IO VDD_IO_DIG BCLK VDDD FSYNC VSSD1,2,3 XE1401

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?