KZ3 - V Search Results

kz4 y6

Abstract: KY8 Y8 Y6 kz4 BZX84C2V7 ky4 diode kz4 diode ky2 y3 KZ9 Y6 BZX84C13 KY3 Y3 kz4
Contextual Info: BZX84C2V7 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.7V - 51V Ideally Suited for Automated Assembly Processes SOT-23 Mechanical Data • • • • • • Case: SOT-23, Molded Plastic

ky6 diode

Abstract: diode ky5 kz4 diode ky2 ZENER DIODE SOT package marking KY5 diode kz6 diode kz4 zener kz3 zener diode ky6 zener
Contextual Info: NEW PRODUCT BZX84C2V7S - BZX84C39S DUAL 200mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.7V - 39V Ultra-Small Surface Mount Package SOT-363 A NC A1 C1 KXX B C

KZ5 X

Abstract: KZ4 SOT23 VISHAY kz4 diode KZ2 sot23 BZX84C 6v2 zener diode KZ1 sot23
Contextual Info: BZX84C2V7-BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features • Planar die construction • 350 m W Power dissipation • Zener voltages from 2.7V - 51V • Ideally suited for autom ated assem bly processes Absolute Maximum Ratings Tj = 25°C

ky2 ZENER DIODE

Abstract: diode kz4 zener MARKING IS KY5 diode ky5 kz2 zener
Contextual Info: NEW PRODUCT BZX84C2V7S - BZX84C39S DUAL 200mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.7V - 51V Ultra-Small Surface Mount Package SOT-363 A NC C1 A1 KXX B C

KZ2 sot23

Abstract: KZ4 SOT23 Y6 kz4 marking kz5 sot-23 KY8 Y8 ky4 sot-23 KY2 SOT23 KZ7 sot23 SOT package marking KY5 kz2 sot 23
Contextual Info: BZX84Cxxx Series Elektronische Bauelemente 350 mW SOT-23 Series Surface Mount Zener Voltage Regulator Diodes RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES       A L 3 Planar Die Construction 300 mW Power Dissipation on FR-5 PCB

KZ9 Y6

Abstract: Y1 kz4 cu marking code zener Y3 kz4 kz4 y3 zener marking code C3 sot23 kz3 X JYp sot-23 JYp sot KZ9 Y3
Contextual Info: BZX84C2V7 - BZX84C51 VISHAY 350mW SURFACE MOUNT ZENER DIODES /uTE M ir I POWERSEMICONDUCTOR J Features Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.7V - 51V Ideally Suited for Automated Assembly Processes SOT-23 Dim Min Max A 0.37

BZX84C2V4S

Abstract: BZX84C2V7S BZX84C39S BZX84C3V0S BZX84C3V3S BZX84C3V6S BZX84C3V9S BZX84C4V3S marking code ky6 marking Kz1
Contextual Info: BZX84C2V4S - BZX84C39S DUAL 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Ultra-Small Surface Mount Package SOT-363 A C1 KXX YY Mechanical Data • · · · · Case: SOT-363, Molded Plastic

KZ9 sot23

Abstract: KZ4 SOT23 KY2 SOT23 KZ4 SOT23 VISHAY KZ5 X
Contextual Info: BZX84C2V7-BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features • Planar die construction • 350 mW Power dissipation • Zener voltages from 2.7V - 51V • Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings

KZ9 sot23

Abstract: KZ5 X kz4 diode KY3 SOT23 KZ7 sot23 KZ3 SOT23 BZX84C BZX84C2V7 BZX84C51 ZENER 5V1 VISHAY
Contextual Info: BZX84C2V7–BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings Tj = 25_C

KZ4 SOT23 VISHAY

Abstract: KZ7 sot23 kye vishay HA2010
Contextual Info: BZX84C2V7-BZX84C51 VÏSH A Y ▼ Vishay Telefunken 350 mW Surface Mount Zener Diodes Features • Planar die construction • 350 mW Power dissipation • Zener voltages from 2 .7 V - 5 1 V • Ideally suited for automated assembly processes 94 8550 Absolute Maximum Ratings

diode kz4 zener

Abstract: diode ky6 zener diode kz9 zener diode kz4 y8 zener ky2 zener zener diode kz3 diode kz2 zener diode kz4 y5 zener kz3 zener diode kz1 zener
Contextual Info: BZX84C2V7 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.7V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A B Mechanical Data •

BZX84C39

Abstract: ky4 sot-23 kze marking code KZ2 sot23 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V6 J-STD-020A
Contextual Info: BZX84C2V4 - BZX84C39 300mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 300mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automated Assembly Processes SOT-23 A · · · Min Max A 0.37 0.51 B 1.20 1.40 TOP VIEW

diode kz1 zener

Abstract: diode kz4 zener C18 zener package marking KY5 diode ky5 diode kz9 zener marking code kz2 BZX84C2V4S BZX84C2V7S BZX84C5V6S
Contextual Info: BZX84C2V4S - BZX84C39S DUAL 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Ultra-Small Surface Mount Package SOT-363 A C1 • · · · · · · B C KXX YM Mechanical Data NC Case: SOT-363, Molded Plastic

KZ3 SOT23

Abstract: KZ8 SOT23 KZ1 sot23 KZ7 sot23 diode kz4 y8 zener KY3 SOT23 KZ9 Y6 Y6 kz4 KZ4 SOT23 KY2 SOT23
Contextual Info: BZX84C2V7–BZX84C51 Vishay Telefunken 350 mW Surface Mount Zener Diodes Features D D D D Planar die construction 350 mW Power dissipation Zener voltages from 2.7V – 51V Ideally suited for automated assembly processes 94 8550 Order Instruction Type BZX84C2V7

diode kz1 zener

Abstract: diode kz4 zener diode kz2 zener diode kz9 zener dual zener BZX84C39S KY4 ZENER DIODE marking code kz2 BZX84C2V4S BZX84C2V7S
Contextual Info: BZX84C2V4S - BZX84C39S DUAL 200mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C2V4S BZX84C2V7S BZX84C3V0S BZX84C3V3S BZX84C3V6S BZX84C3V9S BZX84C4V3S BZX84C4V7S BZX84C5V1S BZX84C5V6S BZX84C6V2S BZX84C6V8S BZX84C7V5S BZX84C8V2S BZX84C9V1S BZX84C10S BZX84C11S BZX84C12S BZX84C13S BZX84C15S

Contextual Info: RF RF2152 Preliminary MICRO DEVICES POWER AMPLIFIERS D U A L - M O D E C D M A / A M P S OR T D M A / A M P S 3 V P OWE R A M P L I F I E R manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier In dual-mode

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CQ 637

Abstract: HPL695561
Contextual Info: 64A- /@?;9;?7A3 =38/C 4HERSPHQ z Dok\e[\[ k\dg3 iXe^\ lg kf 67: z 6 Efid @ - 6 Efid B ZfekXZk XiiXe^\d\ek z 73=dd NB k\id`eXcj z OfGP - DIS Zfdgc`Xek ?UOJFEK /OOKJFERJNMQ G\X[c`^_k Zfekifc1 El\c gldg Zfekifc1 Gfie Zfekifc1 @4B Zfdgi\jjfi ZclkZ_ 16/=/1?3=7>?71>

4468A

Abstract: C2024 transistor A00390 FR 9024 IC 4468 2SB1295 LA3235W LA4590W SQFP-48 ac din hfe nv
Contextual Info: Ordering n u m b e r:EN 4 468A Monolithic Linear 1C N0.4468A // SA \YO LA4590W 1.5 V Stereo Headphone Preamplifier and Power Amplifier i Overview Package Dimensions T he L A 4590W is a system IC that collects the functions unit: m m required for a playback set in a single chip, and reduces

Contextual Info: KM41 V4000DT CMOS DRAM ELECTRONICS 4 M X 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

CHN 943

Abstract: v699 9174-T Jl-39 ez83 fnh16 U68T 429L 544g MBCL
Contextual Info: t Rg\Z`]`ZXk`fej z+xz+{xz+} *y~|y* K AC jip_k Q_f_]m[\f_ 5]jl374]jl36e]jl39e]jl \r chh_k DIO lpcm]b CO50 CO6 -IMHIBIR. PEQER chjnm Rb[he rin o_kr gn]b `ik l_f_]mcha Anmihc]l jki^n]ml2 Ffi pfli jX]\kp1 gc\Xj\ i\X[ k_\ ]fccfn`e^ Y\]fi\ lj`e^3 yOf_[l_ e_j mb_l_ chlmkn]mcihl [h^ k_oc_p mb_g \_`ik_ nlcha mbcl nhcm2