L10C11PC20 Search Results

Y33DA

Contextual Info: L10C11 4/8-bit Variable Length Shift Register □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2011 □ Load, Shift, and Hold Instructions □ Separate Data In and Data Out Pins

L10C11

Abstract: L10C11CC15 L10C11CC20 L10C11CC25 L10C11PC15 L10C11PC20 L10C11PC25 TMC2011 l30 diode smd
Contextual Info: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Variable Length 4 or 8-bit Wide Shift Register ❑ Selectable Delay Length from 3 to 18 Stages ❑ Low Power CMOS Technology

L10C11JC20

Abstract: L10C11 L10C11JC15 L10C11PC15 L10C11PC20 TMC2011
Contextual Info: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Variable Length 4 or 8-bit Wide Shift Register ❑ Selectable Delay Length from 3 to 18 Stages ❑

Contextual Info: L10C11 □ FV IC E S IN C O R P Q R A T F D FEATURES q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology q Replaces Fairchild TMC2011 q Load, Shift, and Hold Instructions q Separate Data In and Data Out Pins

Contextual Info: L o g u i c o c h 4/8-bit Variable Length Shift Register DEVICES INCORPORATED □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW/Raytheon TMC2011 □ Load, Shift, and Hold Instructions

smd diode L30

Abstract: l30 diode smd SMD L30
Contextual Info: L 1 0 C 11 4/8-bit Variable Length Shift Register D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ □ □ □ □

Contextual Info: L10C11 4/8-bit Variable Length Shift Register DESCRIPTION FEATURES □ V ariable L ength 4 or 8-bit W ide Sh ift R egister □ Selectable D elay L ength from 3 to 18 Stages □ L ow P ow er C M O S T echnology □ R eplaces T R W /R a y th e o n TM C2011 □ Load, Shift, and H old Instructions

Contextual Info: uncu L10C11 DEVICES INCORPORATED FEATURES □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/RaytheonTMC2011 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins

Contextual Info: L 1 0 C 1 1 4/8-bit Variable Length Shift Register FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2011 □ Load, Shift, and Hold Instructions

L10C11

Abstract: L10C11JC15 L10C11JC20 L10C11PC15 L10C11PC20 TMC2011 smd diode Y5
Contextual Info: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology

Contextual Info: L10C11 D E V IC E S IN C O R P O R A T E D FEATURES □ V ariable Length 4 or 8-bit W ide Sh ift Register □ Selectable D elay L ength from 3 to 18 Stages □ Low Pow er C M O S Technology □ Replaces T R W /R a y th eo n TM C2011 □ Load, Shift, and Hold Instructions