L30 DIODE SMD Search Results

Contextual Info: Product specification BAV23 Unit: mm Features Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage:max. 200 V Repetitive peak reverse voltage:max. 250 V Repetitive peak forward current:max. 625 mA. Absolute Maximum Ratings Ta = 25

l30 diode smd

Abstract: SMD L30 smd diode L30 L30 "double diode" smd diode marking L30 l30 diodes L30 general purpose double diode JTp smd diode MARKING L30 BAV23
Contextual Info: Diodes SMD Type General Purpose Double Diode BAV23 Unit: mm Features Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage:max. 200 V Repetitive peak reverse voltage:max. 250 V Repetitive peak forward current:max. 625 mA.

Contextual Info: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. GPS2 click 2 1 3 4. Essential features 1. Introduction

l30 diode smd

Abstract: zy Marking code sot23 MARKING SOT23 .DG diode NXP marking code N1 SOT23 NXP power dissipation TO-236AB l30 sot23-4 smd diode marking YD N1 MARKING CODE SOT23 smd diode L30 smd diode marking L30
Contextual Info: BAV23 series Dual high-voltage switching diodes 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1] Package Configuration

l30 diode smd

Abstract: smd diode AE 2F smd diode marking L30
Contextual Info: Schottky Barrier Diode mtmm o u t l i n e Single Diode DE10S3L U nit I mm Package : E-pack W eight 0.326« T y p M 30 V 10A Feature 6.6 • SMD • SMD • V f =0 .4 5 V • Low V f =0 .4 5 V • • P brsm Rating pbrsm i- • • High Io R ating-Sm all-PK G

L10C11

Abstract: L10C11JC15 L10C11JC20 L10C11PC15 L10C11PC20 TMC2011 smd diode Y5
Contextual Info: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology

L10C11

Abstract: L10C11CC15 L10C11CC20 L10C11CC25 L10C11PC15 L10C11PC20 L10C11PC25 TMC2011 l30 diode smd
Contextual Info: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Variable Length 4 or 8-bit Wide Shift Register ❑ Selectable Delay Length from 3 to 18 Stages ❑ Low Power CMOS Technology

Contextual Info: L o g u i c o c h 4/8-bit Variable Length Shift Register DEVICES INCORPORATED □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW/Raytheon TMC2011 □ Load, Shift, and Hold Instructions

smd diode marking A7 SOT-23

Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Contextual Info: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad

Contextual Info: L10C11 D E V IC E S IN C O R P O R A T E D FEATURES q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology q Replaces Fairchild TMC2011 q Load, Shift, and Hold Instructions q Separate Data In and Data O ut Pins

Contextual Info: L10C11 □ FV IC E S IN C O R P Q R A T F D FEATURES q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology q Replaces Fairchild TMC2011 q Load, Shift, and Hold Instructions q Separate Data In and Data Out Pins

DIODE smd marking A7p

Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Contextual Info: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur­

11213

Abstract: STPS30120CT
Contextual Info: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high

Contextual Info: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high

Contextual Info: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

PS40M120CT

Abstract: STPS40M120CR
Contextual Info: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high

PS40SM120CTN

Abstract: STPS40SM120CR
Contextual Info: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS20120C Power Schottky rectifier Datasheet − production data Features • High junction temperature capability ■ Avalanche rated A1 ■ Low leakage current A2 ■ Good trade-off between leakage current and forward voltage drop K Description K Dual center tap Schottky rectifier suited for high

Contextual Info: uncu L10C11 DEVICES INCORPORATED FEATURES □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/RaytheonTMC2011 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins

smd diode L30

Abstract: l30 diode smd SMD L30
Contextual Info: L 1 0 C 11 4/8-bit Variable Length Shift Register D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ □ □ □ □

STPS20

Contextual Info: STPS20120C Power Schottky rectifier Datasheet − production data Features • High junction temperature capability ■ Avalanche rated A1 ■ Low leakage current A2 ■ Good trade-off between leakage current and forward voltage drop K Description K Dual center tap Schottky rectifier suited for high

STPS20L60C

Contextual Info: STPS20L60C Power Schottky rectifier Datasheet - production data Description A1 K Dual center tap Schottky rectifiers suited for switched mode power supplies and high frequency DC to DC converters. A2 Packaged in TO-220AB, TO-220AB narrow leads, I2PAK and D2PAK, this device is intended for use