L51ROPT1D1 Search Results

L51ROPT1D1 Price and Stock

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PARA LIGHT L-51ROPT1D1 L-51 SERIES 30 V 940 NM 10 MW THROUGH HOLE SILICON NPN PHOTOTRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
IBS Electronics	L-51ROPT1D1		134,000		1,000	1 - 10 - 100 - 1000 $0.05317 10000 $0.05031	Buy Now
New Advantage Corporation	L-51ROPT1D1		101,000		1	1 - 10 - 100 - 1000 $0.061 10000 $0.061	Buy Now

L51ROPT1D1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
L51ROPT1D1		Para Light	Receiver Module		Original	PDF	1.18MB	14
L-51ROPT1D1		Para Light	5.0 mm phototransistor		Original	PDF	66.07KB	1
L-51ROPT1D1		Para Light	Receiver Module		Original	PDF	1.18MB	14

L51ROPT1D1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRM0101 Abstract: irm01 L327EIR1BC IRM0101-1 L-31ROPT1XX L-32XOPT1XX L-514EIR1C IRM0208-A538 L-31ROPT1C L-SC1R9PD1 Contextual Info: PL- IRM0101-1 RECEIVER MODULE ABSOLUTE MAXIMUN RATING: Ta=25ºC PARAMETER Test Conditions Symbol Value Supply Voltage - Vcc 3~5 V Output Voltage - Vout 3~5 V Output Current - lo 2.5 mA Junction Temperature - Ti 100 ºC Storage Temperature Range - Tstg -25	Original	IRM0101-1 L-514EIR1BC L-515EIR1BC L-516EIR1BC L-517EIR1BC L-518EIR1BC L-51AEIR1BC L-514CIR1BC 100mA IRM0101 irm01 L327EIR1BC L-31ROPT1XX L-32XOPT1XX L-514EIR1C IRM0208-A538 L-31ROPT1C L-SC1R9PD1	PDF
L51ROPT1D1 Abstract: L-51ROPT1D1 L51ROPT1C L-51ROPT1D2 L-51ROPT1C L-51ROPT1XX Contextual Info: L-51ROPT1XX 5.0mm PHOTOTRANSISTOR ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: Ta=25℃ ℃ PD（mw） Part No. V（BR）CEO（V） Topr Tstg -35℃ to 85℃ 30 Reverse break down Operating Temperature PARAMETER Power Dissipation Voltage Range Lead Soldering Temperature { 1.6mm ( 0.063 inch ) From Body } 250℃±5℃For 3 Seconds	Original	L-51ROPT1XX L-51ROPT1C L-51ROPT1D1 L-51ROPT1D2 100uA L51ROPT1D1 L51ROPT1C L-51ROPT1XX	PDF
L-51ROPT1XX Abstract: L51ROPT1D1 L-51ROPT1D2 phototransistor 800 nm 51ROPT PHOTOTRANSISTOR L L-51ROPT1C L-51ROPT1D1 Contextual Info: L-51ROPT1XX 5.0mm PHOTOTRANSISTOR ¡ »ABSOLUTE MAXIMUN RATING: Ta=25ºC Part No. PD (mw) V(BR)R (V) Topr Tstg L-51ROPT1XX 10 PARAMETER Power Dissipation 5 Reverse break down voltage -35ºC to 85ºC Operating Temperature Range -35ºC to 85ºC Storage Temperature	Original	L-51ROPT1XX L-51ROPT1XX L51ROPT1D1 L-51ROPT1D2 phototransistor 800 nm 51ROPT PHOTOTRANSISTOR L L-51ROPT1C L-51ROPT1D1	PDF
IRM0101 Abstract: IRM0208-A538 L327EIR1BC L-314EIR1C L-31ROPT1C L-31ROPT1D1 L-31ROPT1D2 L-31ROPT1XX L-32ROPT1D1 L-32XOPT1XX Contextual Info: PL- IRM0101- 3 RECEIVER MODULE ABSOLUTE MAXIMUN RATING: Ta=25ºC PARAMETER Test Conditions Symbol Value Supply Voltage - Vcc 4.5~5.5 V Output Voltage - Vout 4.5~5.5 V Output Current - lo 5 mA Junction Temperature - Ti 100 ºC Storage Temperature Range - Tstg	Original	IRM0101- L-514EIR1BC L-515EIR1BC L-516EIR1BC L-517EIR1BC L-518EIR1BC L-51AEIR1BC L-514CIR1BC 100mA IRM0101 IRM0208-A538 L327EIR1BC L-314EIR1C L-31ROPT1C L-31ROPT1D1 L-31ROPT1D2 L-31ROPT1XX L-32ROPT1D1 L-32XOPT1XX	PDF