L8S 15 Search Results

varistor Z 500 ps

Abstract: SIOV-CN2220K20G SIOV-CN0805M4G varistor k17 SIOV-SR2220S14BAUTOS SIOV-CN2220K30G K14G smd ic SIOV-CN2220K25G AF102 SIOV-CN1206K60G
Contextual Info: SMD-Varistoren SMD Varistors %Mw >.““‘-.’-2 ;renzdaten \naxlmum ratings TA = 85 “C enndaten Zharactertstlcs T/j = 25 “C) I- TYP Type Bestell-Nr. Ordering code Jv I mnx (8120 ps) A J 1 mA) d SIOV-CN0805M4G SIOV-CN 1206M4G - SIOV-CN12lOM4G SIOV-CN1812M4G

marking L8s

Abstract: marking L7s diode TS SOT23
Contextual Info: BAR 14-1 . BAR 16-1 Silicon PIN Diodes 3 • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics 2 BAR 14-1 BAR 15-1 BAR 16-1 3 3 3 1 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005

jis H4100

Abstract: a6063 S-200-02FR S-200-04FR A6063S-T A6063S
Contextual Info: SILICON FAST RECOVERY RECTIFYING DIODES • 200V % 400V S-200-r jFR • 170A 7 - i • trr^ 0 .5 /iS FEATURES • £ * & (Ta = 25‘C Characteristics(Ta=25,C, unless otherwise specified) m Electrical characteristics Hi » # - 5 5 - + 150 s Tstg °C —55— h 150

LGS-5A-15-OV-R

Abstract: Lambda Hybrid LGS-FA-28-OV-R lambda lgs f 28 ov r LGS-FA-15-0V-R lambda lg lgs-eea lambda lga f lambda lgs-eea-15 lambda LAS
Contextual Info: 5 YEAR GUARANTEED SWITCHING Lambda LG and LGA series Features—LG and LGA series 5-year guaranteed switching power supplies Sprague computer grade hermetically sealed 10-year life electrolytic capacitor 4 package sizes up to 190A, up to 48 Volts Hermetically sealed semiconductors

varistor s20k

Abstract: varistor s20k 385 varistor S10k 275 S10K385 s20k siemens S20K460 SR2220 varistor s10k300 S14K Siemens varistor s10k
Contextual Info: SIEMENS/ S P C L t SEfllCONDS 4WE D Electrical Specification : Disc Types • 0E3b32G 00173^2 S * S I P — P -1V" 2 5 Maximum Ratings 85°.C Continuous Part Number AC Voltage (RMS) DC Voltage Average Power Dissipation Energy« 2 ms Peak Current 8;20iJ.s

BAR16-1

Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
Contextual Info: BAR14-1.BAR16-1 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type

plastite screw

Contextual Info: T DRAWING REVISIONS DOCUMENT REV APP DATE RELEASE FOR P RO D U C T I O N D.O. # 0 1 - 1 4 0 7 TO HOUSING I .464 [ 3 7 . ¡8] OVER NSULATOR <LOF 2 REF MATCH CPU DIE DRAFT 1 . 150 29.21] MTG HOLE . 166 [4.22] PCB MTG S U R F A C E TO T ER M I N A L ENDS PANEL

BAR61

Abstract: BAR14-1 l8s 15 BAR15-1 BAR16-1 marking L8s marking L7s diode
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

Contextual Info: 7 TH I S D RA W I N G JÊL COPYRIGHT IS U NP U BLI SHE D. 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INC ORP ORATED. 6 4 5 2 3 LOO 19 CM ALL RI G H T S RESE RV ED. DI ST REVISIONS 00 DESC R IPT IO N POST TO WITHSTAND DOTH DIRDCTIONS TOLERANCES 13

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

marking L7s

Abstract: marking L7s diode BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode
RF switch, RF attenuator for frequencies above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1 D 2 2

3 lead ecg block diagram

Abstract: ECG1371
Contextual Info: P H IL IP S E C 6 INC 17E q ECG Semiconductors • ECG1371 5.5 W Dual AF PO Features • Built-in protector circuits for surge and thermal, etc. • Built-In automatic operating point stabilized circuit • Low distortion, low l/f noise • Sm all transient noise at power

ym 238

Abstract: marking code L7S l8s 15 BAR14-1 BAR15-1 BAR16-1 BAR61 0154B
Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAR14-1 BAR15-1

marking code L7S

Abstract: marking L8s marking code 61s BAR14-1
Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

Contextual Info: OM6503SC OM65Q4SC INSULATED G ATE BIPOLARTRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAG E 500 Volt, 20 And 30 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated Hermetic Metal Package • High Input Impedance • Low On-Voltage • High Current Capability

VD810

Contextual Info: A /jfc M a n A M P ic o m p a n y RF MOSFET Power Transistor, 80W, 28V 2 -1 7 5 MHz DU2880V V 2 .0 0 Features • • • • • • u . 7t > - . t i t (# N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power

marking code L7S

Abstract: BAR14-1 BAR15-1 BAR16-1 BAR61 BCW66 BFP181 marking L8s
Contextual Info: BAR1. / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  ,  ,  ,  ,  Type BAR14-1 BAR15-1

WD1010

Contextual Info: Smart Curing System ZUV Series CSM_ZUV_series_DS_E_4_1 Cost Revolution Led by UV Curing System • Minimal heat damage thanks to UV-LED irradiation. • New UV LEDs with much higher brightness mounted in heads. *1 • Greater irradiation power to reduce bonding tact time.

Contextual Info: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package BAR14-1 BAR15-1 ! BAR16-1 ! BAR61 " ! ! ,  , 

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

BAR14-1

Contextual Info: BAR14-1 / BAR15-1 / BAR16-1 / BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics BAR14-1 BAR15-1 3 BAR16-1 3 BAR61 4 3 3 D 1 D 1 D 2 D 1 1 2 1

BAR16-1

Contextual Info: BAR1./BAR61. Silicon PIN Diode • RF switch, RF attenuator for frequencies above 10 MHz • Low distortion faktor • Long-term stability of electrical characteristics • Pb-free RoHS compliant package • Qualified according AEC Q101 BAR14-1 BAR15-1

A2103

Contextual Info: 2SK1017-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee