LA 3661 Search Results

LA-3481P

Abstract: LA-3661P apa2056 LS-3484P iskaa LS-3482P 943GML LA-3661 compal 3661p LS3482p
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 ISKAE LA-3661P Schematics Document Intel Yonah/Merom with 945GM/943GML/940GML+ DDRII + ICH7M 2006-12-22 3 3 REV: 0.1 4 4 2006/10/31 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/11/13

14004

Abstract: DIN 933 M12 4 PIN CIRCULAR PLASTIC CONNECTORS Rouge 933 176-100 hirschmann Topaz 512 4412 61076 lichtschranke ST 150 MB-800
Contextual Info: E-Serie Kat-0901-Druck 24.09.2001 15:37 Uhr Seite 2 Rundsteckverbinder M 8 + M12 für den elektrischen Anschluß von Sensoren Circular connectors M8 + M12 for the electrical connection of sensors Fiches cylindriques M8 + M12 pour la connexion électrique de détecteurs

Contextual Info: MICRON I 2M E Gx64 SDRAM SODIMM SMALL-OUTLINE li il RA I lA ^ llfl IV I MT8LSDT264H I II For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View • JEDEC-standard 144-pin, small-outline, dual in-line

tivd

Abstract: d07-15 d0715 M08A M14B NM24C16 NM24C16L 50090
Contextual Info: a t i o n a l S e m February 1995 i c o n d u c t o r & NM24C16L 16,384-Bit Serial EEPROM l2C Synchronous 2-Wire Bus General Description Features The N M 24C 16L device has 16,384 bits o f C M O S non­ vo la tile electrica lly erasable memory. This device conform s

ADQ28

Contextual Info: ADVANCE 16 MEG X 32 SDRAM DIMM MICRON' I TBCIWOtOOT, WC. MT4LSDT1632UD SYNCHRONOUS DRAM MODULE F o r the la te st data sh e e t revisions, please re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES • JEDEC pinout in a 100-pin; dual in-line memory

tld84

Contextual Info: M I I C R O N 8 M EG x 64 SDRAM SODIMM SMALL-OUTLINE li il R A I lA ^ llfl IV I I MT8LSDT864H I I For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View • PC100 rev 0 .7,144-pin, small-outline, dual in-line

Contextual Info: molexMolex-ETC STANDARD RING TONGUE LISTED Ring Tongue Terminals c s yrr /c \_ / ? - -> *— '»» w— _L () 7 i ( [ H L i_ J M a f e r ia l: C o p p e r In s u lk r im p (5 i_ V e r s a k rim p " N y la k rin tp ® (PVC Insulation) Funnel E n try

LC11GN2

Abstract: LC11BT2 178-0333-500 LC11BN2 LC11RT2 LC11RN2 LC11CN2 MIL-L-3661B MIL-L-6723 178-0331-500
Contextual Info: Incandescent Indicators T-1 3/4 M ID G ET FLA N G E BASE TWO T E R M IN A L S - FULLY INSULATED See lamp ratings on page J. FOR MOUNTING IN 15/32" CLEARANCE HOLE M EET OR EXCEED E N V IR O N M E N T A L A N D O P E R A T IO N A L REQ U IREM ENTS OF M IL-L -6 7 2 3 A N D M IL L -3661B.

MS25237

Abstract: MIL-L-3661B LH89 LH76 MIL-L-3661 24-20-41 367-8430-09-503 24184 t-1 midget
Contextual Info: SECURE LIGHTING DESIGNED TO MEET REQUIREMENTS OF MIL-L-3661B Used for secure low light level nighttime operation and normal daytime operation. Features • These indicators are designed to meet the Secure Lighting Statement o f Work Priorities instituted by CECOM Communications

MS25446-4

Abstract: MS25446-3 LHC82 MS25446-6 MS25446 MIL-L-3661B MS25446-2 MS25446-7 3661B MS25446-5
Contextual Info: Sub-Sub-Miniature Incandescent Indicator .193" m o u n tin g hole 252 series FEATURES • • • • • • Conforms to M IL-L-3661B and Drawing M S25446 Requires only .193" Panel Mounting Clearance Hole High Impact Translucent Plastic Cap Sealed — Moisture and Dust Proof . Wire Leads

Contextual Info: 10 36617 NOTES : 1. MATERIALS: HOUSING AND CONTACT SUPPORT- THERMOPLASTIC POLYESTER. GLASS FILLED. UL94V-0. COLOUR: BLACKTERMINAL - PHOSPHOR BRONZE. 0 2 .50 2. FINISH: TERMINAL:CONTACT AREA 2-1 PERFORMANCE LEVEL 1: SELECTIVE GOLD Au . THICKNESS = 1.25 MICROMETER

qml-38535

Abstract: qml38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE

E80T

Abstract: ts-130 transformer PHILIPS ELECTRONIC TUBE HANDBOOK UG2G ic la 3661 2X20 2X24 E80L ELECTRONIQUES
Contextual Info: SQ PHILIPS E 80 L OUTPUT PENTODE for use in professional equipment life longer than 10 000 hours PENTHODE DE SORTIE pour utilisation dans 1*équipement professionnel (durée plus longe que 10 000 heures) ENDPENTODE zur Verwendung in professionellen Anlagen

ci scl 4001 be

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-4516CB64KS, 4516CB64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CB64KS, 4516CB64ES is a 16,777,216 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM : ^¡PD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 Revision E are assembled.

75F75

Contextual Info: TO SH IBA THLY6416G1 FG-75f-75L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CC726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

THLY6416G1FG-80

Abstract: C17-C24 THLY6416G1FG ftl specification
Contextual Info: TOSHIBA THLY6416G1 FG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

semiconductor 80L

Contextual Info: TOSHIBA THLY6416G1FG-75,-75L,-80,-80L ABSOLUTE M AXIM UM RATINGS SYMBOL ITEM RATING UNIT NOTES V IN Input Voltage - 0 .3 - V DD + 0.3 V 1 VOUT Output Voltage - 0 . 3 - V DD + 0.3 V 1 V dd Power Supply Voltage -0.3 - 4 .6 V 1 t opr Operating Temperature 0-70

MS25041

Abstract: MS25041-7 MS25041-1 MS25041-4 MS25041-3 MS25041-8 MS25041-2 MIL-L-7961B MS25041-10 800033-1
Contextual Info: S u b -M in ia tu r e In c a n d e s c e n t P R E S S - T O - T E S T In d ic a to rs M IL IT A R Y S T A N D A R D D RAW ING MS25041 - 1 to 11 For back of panel mounting in 15/32" clearance hole Meet or exceed requirements of M IL —L —7961B and M IL —L —3661

Contextual Info: DATA SHEET M F f * / MOS INTEGRATED CIRCUIT / MC-458CB641 ES 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CB641ES is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: ^¡PD45128163 are assembled.

T726

Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
Contextual Info: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature

THLY6416G1FG

Contextual Info: TO SH IBA TH LY6416G1FG-75,-75L,-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.