LAE2001R Search Results

Contextual Info: LAE2001R Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)60m Absolute Max. Power Diss. (W)800m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: N AMER PHILIPS/DISCRETE OLE » bb53T31 DOlMflT? □ • MAINTENANCE TYPE LAE2001R for new design use LA E4001R T-3I-*3 MICROW AVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

common emitter amplifier

Abstract: scotty barrier diode do-214ac LAE2001R SOT100 LAE4001R 2X transistor transistor military SOT-100
Contextual Info: N AMER PH ILIP S /D IS C R E TE OLE D • btaSBTBl GOlHflT? | MAINTENANCE TYPE G LAE2001R for new design usa LAE4001R T-31-^3 MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI