SOT100 Search Results

Contextual Info: Package outline HVQFN25: plastic thermal enhanced very thin quad flat package; no leads; 25 terminals; body 5 x 5 x 0.85 mm A B D SOT1003-1 terminal 1 index area E A A1 c detail X e1 C e L1 v w b 8 14 C A B C M M y1 C y L 7 15 e e2 Eh 18 1 terminal 1 index area

Contextual Info: Package outline HVQFN36R: plastic thermal enhanced very thin quad flat package; no leads; 36 terminals; resin based; body 6 x 5 x 0.85 mm A B D SOT1000-1 terminal 1 index area E A detail X e1 v w M M C A B C L1 1/2 e e v w b 11 18 C C A B C M M y y1 C L 10

Contextual Info: Package outline Plastic flanged cavity package; 2 mounting slots; 8 leads SOT1006A D A F D1 L U1 B q C H1 1 w2 2 6 H H2 c C 7 U2 E1 p 5 8 A B 9 3 A w1 E 4 b1 b Q1,2 w3 e U1 U2 w1 w2 w2 0.25 0.51 0.25 0.01 0.02 0.01 41.28 10.29 41.02 10.03 1.625 0.405 5 mm

LAE4001R

Abstract: SC15 MGL069
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING-SOT100 • S elf-aligned process e ntirely ion im planted and gold sandw ich m etallization PIN • O ptim um tem perature profile • E xcellent perform ance and reliability.

Contextual Info: Package outline Plastic flanged cavity package; 2 mounting slots; 6 leads SOT1007A D A F D1 L U1 B q C c 1 4 H1 H 5 U2 w1 3 6 A 2 b1 b w2 B A Q1,2 C 5 10 mm A max 3.68 nom min 3.43 0.25 0.51 0.01 0.02 Q2 2 U1 U2 1.75 1.8 20.45 9.98 3.05 1.50 1.4 20.19 9.65

Contextual Info: Package outline HUQFN60U: plastic thermal enhanced ultra thin quad flat package; no leads; 60 terminals; UTLP based; body 5 x 5 x 0.55 mm B D SOT1008-1 A terminal 1 index area A E A1 detail X e2 v w C A B C M M v w b e1 C A B C M M C 1/2 e L1 L e D2 D6 eR

Contextual Info: PDF: 2000 Jan 10 Philips Semiconductors Package outline Hermetic ceramic surface mounted package; 4 leads A SOT100A c D1 H b 4 3 H E b1 1 D 2 2.5 5 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4002S FEATURES PINNING -SOT100 • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile

Contextual Info: Package outline Hermetic ceramic surface-mounted package; 4 leads A SOT100A c D1 H b 4 3 H E b1 1 D 2 2.5 5 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 E H mm 1.31 0.81 1.07 0.96 0.56 0.45 0.16

Contextual Info: Package outline HVQFN36R: plastic thermal enhanced very thin quad flat package; no leads; 36 terminals; resin based; body 5.5 x 4.5 x 0.85 mm A B D SOT1001-1 terminal 1 index area E A detail X e1 v w b e L1 10 18 M M C C A B C y1 C y L e e2 Eh terminal 1 index area

sot100a

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Surface mounted ceramic hermetic package; 4 leads A SOT100A c D1 H b 4 3 H E b1 1 D 2 2.5 5 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1

LAE4002S

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LAE4002S FEATURES PINNING-SOT100 • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile

SDIO101IHE

Abstract: SDIO101 CE-ATA version 1.1 TFBGA64 SDcd MMC specification version 1.4 D2B10 smd diode H3 SDIO HOST CONTROLLER
Contextual Info: SDIO101 SD/SDIO/MMC/CE-ATA host controller Rev. 01 — 24 September 2009 Product data sheet 1. General description The SDIO101 is a SD/SDIO/MMC/CE-ATA host controller with a standard 16-bit asynchronous memory interface. The device conforms to the SD Host Standard

Contextual Info: N AMER PHILIPS/DISCRETE OLE D LLS3T31 ooman MAINTENANCE TYPE 4 LAE4000Q for new design use LAE4001R r-i)-a3 M IC R O W A V E LIN EA R PO W ER T R A N S IS T O R NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

IEC134

Abstract: LAE4002S
Contextual Info: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

Contextual Info: N AMER PHILIPS/DISCRETE OLE » bb53T31 DOlMflT? □ • MAINTENANCE TYPE LAE2001R for new design use LA E4001R T-3I-*3 MICROW AVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

2N6679

Abstract: sot100 70MA20 SOT-100
Contextual Info: 2N6679 SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 70 mA 20 V P d is s 900 mW @ Te %87 0C o Ie < m MAXIMUM RATINGS Tj -65 °C to +200 0C Tstg -65 0C to +200 0C

BFR49

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D □ ^ £ 3 = 1 3 1 0017133 a • BFR49 BFF9UA is recommended for new design T -3 /-H N-P-N 2 GHz WIDEBAND TRANSISTOR N-P-N transistor in a miniature hermetically sealed micro stripline encapsulation featuring a high transition frequency and low noise. It is suitable for amplifiers up to S-band frequencies in

Contextual Info: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,