LAND PATTERN TSOP 6 Search Results

land pattern for TSOP 2 54 pin

Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
Contextual Info: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current

Contextual Info: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its

land pattern for TSOP 2 44 PIN

Abstract: land pattern for TSOP 2 54 pin land pattern for TSOP 56 pin psop 44 land pattern PQFP 208
Contextual Info: High perform ance 512KX32 CMOS SGRAM 16 Megabit CMOS synchronous graphic RAM Advance information • Organization - 131,072 words x 32 bits x 4 banks • Fully synchronous - All signals referenced to positive edge of dock • Four internal banks controlled by BA0/BA1 bank select

land pattern for TSOP 2-44

Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

land pattern for PSOP

Contextual Info: Plastic dual in-line package PDIP 20 pin 300 mil Min A Al B b c D E El c tA L a S 0.010 0.046 0.018 0.008 28 pin 300 mil Max 0.175 0.054 0.024 0.014 0.980 0.310 0.290 0.263 0.293 0.100 BSC 0.310 0.3S0 0.130 0.110 0° 15° 0.040 Min 0.010 0.0.58 0.016 C.008

TSOP-48 pcb LAYOUT

Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Contextual Info: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions

Contextual Info: H igh Perform ance lMx4 CMOS DRAM |B AS4C14405 A ! M x 4 CMOS EDO DRAM Preliminary information Features • O r g a n iz a t io n : 1 , 0 4 8 , 5 7 6 w o r d s x 4 b its • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in t e r v a l • H ig h sp e ed

Indium Tac Flux 020

Abstract: CU-106A CU-106A shelf life of BGAS DALE SOMC k type thermocouple utl USR(pet) gold embrittlement
Contextual Info: APPENDIX A Surface Tension and the Self-Centering of BGAs ITS PHYSICS ARE REVIEWED T O G E TH E R W I T H SOLDER TYPE, TEM PERATURE A N D THE PRESENCE OF C O N T A M I N A T E S A N D H O W THEY IN F LU E N C E By Steve G r e a t h o u s e THE S E L F - A L I G N I N G M O V E M E N T OF DEVICES D U R I N G

Contextual Info: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options

Contextual Info: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh

LPC2468 reflow solder profile

Abstract: 0.65mm pitch BGA 1mm pitch BGA AN10778 MO-275 TFBGA208 LFBGA32 LPC2468 pcb SOT1018-1 nxp cross
Contextual Info: AN10778 PCB layout guidelines for NXP MCUs in BGA packages Rev. 01 — 22 January 2009 Application note Document information Info Content Keywords LPC2220, LPC2292, LPC2364, LPC2368, LPC2458, LPC2468, LPC2470, LPC2478, LPC2880, LPC2888, LPC3130, LPC3131, LPC3151, LPC3152, LPC3153, LPC3154, LPC3180/10, LPC3220,

Contextual Info: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e

Intel reflow soldering profile BGA

Abstract: all ic data infrared heating gun 82425EX 80c196kb 1988 28F010 80C196KB pcb warpage after reflow Intel reflow soldering profile BGA intel conveyor belt alignment
Contextual Info: Board Solder Reflow Process Recommendations 9.1 9 Introduction In reflowed board assemblies, the solder joint quality is affected by several variables such as the component, SMT Surface Mount Technology assembly conditions, solder paste, reflow profile and board design.

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

Contextual Info: II High p e rfo rm an c e 6 4 K x 52 » A S7CÌ643 2 CM O S SRAM A 6 4 K x 3 2 Synchronous burst S R A M Features • F low -th rou gh op tion • Fast clo ckin g sp e ed : 1 0 0 / 8 3 / 6 6 M H z • Fast clock to d ata access: 5 / 6 / 7 ns • Self-tim ed w rite cycle

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

DD27D

Abstract: land pattern for TSOP 2 50 MB257 TM 1828
Contextual Info: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin

TIP 3771

Abstract: 3771 E1 3771 8 pin ic
Contextual Info: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

woy transistor

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

land pattern for TSOP 2 44 PIN

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

land pattern for TSOP 2 44 PIN

Abstract: com 6116 e2 CHN 920
Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • JED E C revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle tim es