LB 0,5 MA TRANSISTOR Search Results

2N3584

Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
Contextual Info: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

Contextual Info: N AMER PHILIPS/DISCRETE OLE D • bt.53131 0015^75 4 ■ I BSR40 to 43 _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended for application in thick and thin-film circuits.

BSS51

Abstract: BSS50 BSS52 BSS60 BSS61 BSS62
Contextual Info: bTE D N AMER PHILIPS/DISCRETE • btS3T31 D027flSh 553 ■ APX BSS50 to 52 A N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.

BSR20

Abstract: BSR20A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR20 BSR20A SILICON P–N–P HIGH–VOLTAGE TRANSISTORS P–N–P high–voltage small–signal transistors Marking BSR20 = T35 BSR20A = T36

BSR20

Abstract: BSR20A
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR20 BSR20A SILICON P–N–P HIGH–VOLTAGE TRANSISTORS P–N–P high–voltage small–signal transistors Marking

PN3440

Abstract: 9t2 transistor PN3439
Contextual Info: N AMER PHILIPS/DISCRETE b'ïE D Bi ^ 5 3 ^ 3 1 A DD5ÔDSÛ Tbb * A P X PN3439 PN3440 SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors in a TO-92 envelope and intended for use in telephony and professional communication equipment.

Contextual Info: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.

Contextual Info: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc.

2n5038

Abstract: C 5039 2N5039 2N5039-1 503B 20S2 N5038 2N5038-1 lc 112
Contextual Info: NPN SILICON TRANSISTORS E P IT A X IA L COLLECTOR 2 N 5038 TRANSISTORS S ILIC IU M NPN COLLECTEUR E P IT A X IE 2 1\] 5 Q 3 9 High current fast switching transistor \j 9075 VV Transistor de com m utation rapide fo r t courant High frequency applications as switching

transistor bux 39

Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
Contextual Info: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5

PH13002

Contextual Info: / N A ME R PHILIPS/DISCRETE 2SE D • 1^ 53=131 Q D n i m 3 ■ PH13002 PH13003 T - 3 3 - 0 ? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-126 envelope, intended for use in switching regulators, inverters, motor control, solenoid/relay drivers and deflection circuits.

TIP2955T

Abstract: A4S2 TIP3055T T-23-Z
Contextual Info: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR

2N2891

Abstract: 2N2890 C22B
Contextual Info: 2N 2890 2N 2891 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLANAR E P ITAXIAU X - LF large signal amplification high voltage A m plification B F grands signaux (haute tension) • Switching up to 1 A 80 V v CEO h21E(1A) \J 30 - 90

BUV26

Abstract: BUV26A 11/BUV26
Contextual Info: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53^31 □□E7bED 53b BCY56 BCY57 IAPX A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. They are intended for general purpose very high-gain low level and low-noise applications. Moreover,

ESM133

Contextual Info: ESM 132 ESM 133 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SILICIUM PNP, BASE EPITAXIEE ESM 134 Compl. of 2N 5294, 2N 5296, 2N 5298 PRELIM INARY DATA NOTICE PRELIM IN AIR E - LF amplification stages complementary symetry -7 0 V - Switching (-6 0 V

BDT95

Abstract: BDT96 BDT91 1346P pht 094 BDT93
Contextual Info: 05-DEC-1997 12=45 FROM MAGNATEC TO 01132794449 P.04^08 r v s 2 5 1 0 BDT91 BDT93 •BDT95 rC \ MAGNA T f ï r K , , - o b o SILiCON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and

BDX46

Abstract: BDX47 pnp Darlington BDX45 T-33-31 darlington transistor 90v BDX42 BDX43 BDX44
Contextual Info: BDX45 BDX46 BDX47 1 PHILIPS INTERNATIONAL SbE D 711052b 0043*434 ITO Ä P H I N T-3 3 -3 1 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope with collector connected

BDT41

Abstract: BDT41A BDT41B BDT42 TIP41
Contextual Info: SSE D N AMER PHILIPS /DI SCRETE • 11 1^53=531 0Qlei713 □ ■ BDT41;A BDT41B;C I T - 33 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The T IP41 series is an equivalent type. P-N-P complements are B D T 4 2 series.

Contextual Info: • bb53^31 0 02S c17b MMfl H A P X N AMER PHILIPS/DISCRETE PXT3906 b7E » SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a SOT-89 envelope primarily intended fo r high-speed, saturated switching applications fo r industrial service. QUICK REFERENCE DATA

Contextual Info: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization

Contextual Info: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended

2N3440

Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
Contextual Info: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications