LB 127 TRANSISTOR Search Results

LB 127 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

LB 127 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor m4a Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage: TIP125 : TIP126 : TIP127 Collector-Emitter Voltage	OCR Scan	TIP125 TIP126 TIP127 300pis, transistor m4a	PDF
TIP177 Abstract: LB 122 transistor TIP 126 tip127 Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage :TIP125 Rating : TIP 126 ' TIP177 Collector Emitter Voltage	OCR Scan	TIP125 TIP177 TIP126 TIP127 TI000 -100V, -12mA -20mA LB 122 transistor TIP 126	PDF
LB 122 transistor Abstract: TIP125 LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR Contextual Info: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : TIP126 -80 V : TIP127 C ollector E m itter Voltage -120	OCR Scan	TIP125/126/127 TIP120/121/122 TIP125 TIP126 TIP127 120Si LB 122 transistor LB 127 transistor TIP127 TIP126 LB 122 NPN TRANSISTOR	PDF
LB 122 transistor Contextual Info: TIP125/126/127 PNP EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem ent to TIP 120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollecto r Base Voltage : TIP 1 25 Rating Unit -60 V : TIP126 -80 V : TIP127	OCR Scan	TIP125/126/127 TIP126 TIP127 TIP125 LB 122 transistor	PDF
tip127 darlington Abstract: TIP127 TIP122 TIP120 TIP121 TIP125 TIP126 tip122 tip127 Contextual Info: SAN YO NPN TIP120 TIP121 TIP122 SEMICONDUCTOR DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP125 TIP126 TIP127 60-80-100 VOLTS, 5 AMPERE HIGH CURRENT GAIN hFE = 2500 typ. @3V, 3A LOW SATURATION VOLTAGE V c e S A T = 1.0V typ. @2.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN	OCR Scan	TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP120, TIP125 TIP121, TIP126 tip127 darlington TIP127 tip122 tip127	PDF
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to T IP I 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Symbol Rating Unit V CBO -6 0 -8 0 - 100 V V V VcEO -6 0 -8 0 - 100 V V V V A	OCR Scan	TIP125 TIP126 TIP127 TIP125/126/127	PDF
Contextual Info: i., L/na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC184 BC184B BC184C TO-92 Plastic Package Amplifier Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25°C unless specified otherwise)	Original	BC184 BC184B BC184C 200Hz	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122 Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»	OCR Scan	TIP125/126/127 TIP120 TIP121 TIP122 TIP121 TIP120/121/122 120ft LB 122 transistor LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip120 TIP 122 transistor TIP 122 transistor tip 122	PDF
LB 122 transistor Abstract: TRANSISTOR tip 126 Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP I 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic C ollector-B ase Voltage: TIP125 : TIP126 : TIP127 C o lle cto r-E m itte r Voltage	OCR Scan	TIP120/121/122 TIP125 TIP126 TIP127 LB 122 transistor TRANSISTOR tip 126	PDF
Contextual Info: Features • • • • m t- 2N2907A GENERAL PURPOSE PNP TRANSISTOR 61095 OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Oia. 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed	OCR Scan	2N2907A Mil-S-19500 2N2907A lc-50mA, f-100kHz 100kHz 150mA, lc-150mA, 300ns,	PDF
Contextual Info: P * FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA HP122 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Package: TO-220 * Complement to TIP 127 ABSOLUTE MAXIMUM RATINGS at T«ml^25°C C haracteiistk Symbol Rating Uitit	OCR Scan	HP122 O-220 300uSJDuty 100mA	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120	OCR Scan	TIP120/121/122 TIP122 TIP120 TIP121 LB 122 transistor LB 122 NPN TRANSISTOR	PDF
Contextual Info: 61095 Features • • • • jn a- 2N2907A GENERAL PURPOSE PNP TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Dia 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed	OCR Scan	2N2907A Mil-S-19500 2N2907A lc-50mA, f-100kHz 100kHz lc-150mA, 300ns,	PDF
LB 122 transistor Abstract: LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122 TIP120 TIP121 Contextual Info: TIP I 20/121/122 NPN EPITAXIAL DARLINGTON TRANSISTOR MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS Characterist TIP120 TIP121 C ollector-Base Voltage Sym bol Rating V c bO TIP122 C ollector-E m ltter Voltag	OCR Scan	TIP120/121 TIP125/126/127 TIP120 TIP121 TIP122 TIP121 O-220 LB 122 transistor LB 122 NPN TRANSISTOR TIP 122 transistor TIP 122 100 V LB 121 NPN TRANSISTOR NPN Transistor VCEO 80V 100V tip120 to-220 npn darlington TRANSISTOR tip122	PDF

LB 122 transistor Abstract: LB 122 NPN TRANSISTOR Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120	OCR Scan	TIPI25/126/127 TIP120 TIP121 TIP122 LB 122 transistor LB 122 NPN TRANSISTOR	PDF
transistor 2n2369 Contextual Info: Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 15 V). 1 2 base APPLICATIONS 3 collector, connected to case emitter • High-speed switching • VHF amplification.	OCR Scan	2N2369 transistor 2n2369	PDF
LB 124 transistor Abstract: transistor 45 f 123 BU2506DF Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television	OCR Scan	BU2506DF LB 124 transistor transistor 45 f 123 BU2506DF	PDF
transistor K 3565 Abstract: JD127 transistor 45 f 122 2N6040-2N6045 MOTOROLA MJD122 jd122 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* Com plem entary Darlington Power Transistors PNP M JD 127* DPAK For Surface Mount Applications *Motoro<a Pr«ftffd Device Designed for general purpose amplifier and low speed switching applications. SILICON	OCR Scan	2N6040-2N6045 TIP120-TIP122 TIP125-- TIP127 MJD122 MJD127 transistor K 3565 JD127 transistor 45 f 122 MOTOROLA MJD122 jd122	PDF
Contextual Info: N ANER PHILIPS/DISCRETE bTE D bb53^31 0036351 354 H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated	OCR Scan	BU2508D	PDF
Contextual Info: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS IS S U E 1 - N O V E M B E R 19 ï C iŒ I I Bi Ci CH I I Et CzLJZ I I C2 Œ I I E2 b2 PA R T M A R K IN G DETAIL - T749 ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BO L C o lle cto r-B a se V o lta ge C olle ctor-Em itter V o lta ge	OCR Scan	300ns. ZDT749	PDF
Contextual Info: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • High D C Current Gain • Low Collector Emitter Saturation Voltage • Built in a Damper Diode at E-C •Darlington T R • Complement to KSD1222 ABSOLUTE MAXIMUM RATINGS Rating Unit	OCR Scan	KSB907 KSD1222	PDF
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.	OCR Scan	BU1706AX	PDF
IP122 Abstract: transistor darlington TIP-120 tip122c TIP120 Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122	OCR Scan	TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120	PDF
ic Lb 598 d Abstract: GS121 ic Lb 598 sgs120 Contextual Info: S G S-THONSON D7E D I 7 ^ ^ 2 3 7 67C 15347 D 001744_S '7"- T 1 g S Î2 Ô S G S 1 2 5 3 SGSIEI SGSÎ26 1 SGS122 S6S127 EPITAXIAL-BASE NPN/PNP T'33 ~3 l POW ER D A R LIN G T O N S The SGS120, SGS121 and SG S122 are silicon epitaxial-base NPN transistors in monolithic	OCR Scan	SGS122 S6S127 SGS120, SGS121 OT-82 SGS125, 300fis, DD174M7 SGSt20 SGSI25 ic Lb 598 d GS121 ic Lb 598 sgs120	PDF

LB 127 TRANSISTOR Search Results

LB 127 TRANSISTOR Result Highlights (5)

LB 127 TRANSISTOR Datasheets Context Search

transistor m4a

TIP177

LB 122 transistor

LB 122 transistor

tip127 darlington

LB 122 transistor

LB 122 transistor

LB 122 transistor

LB 122 transistor

LB 122 transistor

transistor 2n2369

LB 124 transistor

transistor K 3565

IP122

ic Lb 598 d