LCTE Search Results

2001TL

Abstract: actel die run marking
Contextual Info: Æ lctel Radiation-Hardened Field Programmable Gate Arrays F e a tu re s • Guaranteed Total Dose Radiation Capability • Low Single Event Upset Susceptibility • High Dose Rate Survivability • Latch-Up Immunity Guaranteed • QML Qualified Devices • Commercial Devices Available for Prototyping and

1.5KE 20A 1N6278A

Abstract: KE-25 1.5KE62A Motorola N5908 I.5KE 1N6373 1N6374 1N6382 KE250 KE91A
Contextual Info: Order this data sheet by 1N5908/D MOTOROLA SEMICONDUCTOR \ TECHNICAL DATA 1 N5908 1N6373/lCTE-5 MPTE-5 thru 1N6389/lCTE:~.,C Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high

5KE39

Abstract: 5KE33 lcTE 5KE180 1N5908 N6267 lN6373 1.5KE62A Motorola KE91 5KE43
Contextual Info: IN59Q8 ● lN6373/lcTE=5, c MPTE-5C thru l-N6389/lCTE-45,-C MPTE-45,. c ,’ ZENER OVERVOLTAGE Mosorb devices nentsfrom clamping capability, effective, to protect voltage highly reliable devices MOS SPECIFICATION axial ● Peak Power leaded package and Bipolar

Contextual Info: Z8051 Series 8-Bit Microcontrollers Z51F3220 Product Specification PS029902-0212 PRELIMINARY Copyright 2012 Zilog , Inc. All rights reserved. www.zilog.com Z51F3220 Product Specification ii Warning: DO NOT USE THIS PRODUCT IN LIFE SUPPORT SYSTEMS. LIFE SUPPORT POLICY

Contextual Info: Æ ic te - m ! v 2 .0 Radiation-Hardened Field Programmable Gate Arrays Features Guaranteed Total Dose Radiation Capability Low Single Event Upset Susceptibility High Dose Rate Survivability Latch-Up Im m unity Guaranteed QML Qualified Devices

A12L

Abstract: A13L IDT7016 IDT7016L IDT7016S
Contextual Info: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial:12/15/20/25/35ns (max.) Low-power operation

RA 8040

Abstract: transistor SMD c5c phl 409 64x4 memory SMD cq 603 transistor BIM G18 Y1 smd transistor asy CQ256
Contextual Info: m e te ! v3 .0 - m 40MX and 42MX Families FPGAs F e a tu re s • QML Certification H ig h C a p a c ity • Ceramic Devices Available to DSCC SMD • Single Chip ASIC Alternative E a s e o f In t e g r a tio n • 2,000 to 36,000 Available Logic Gates

Contextual Info: 54SXFamily FPGAs Leadi ng Edge P e r f o r m a nc e • • 320 MHz Internal Performance • 3.3VOperation with 5.0YInput Tolerance • 3.7 ns Qock-to-Out Pin-to-Pin • • 0.1ns Input Set-Up • Deterministic, Ufcer-Controllable Timing • 0.25 ns d o c k Skew

SST85LD1001K

Abstract: SST85LD1001K-60-PC-LBTE mwdma SST85LD1004M SST85LD1002 LBGA nand schematic circuit for computer ssd disk sst85ld0512 SST85LD1008M sst nandrive
Contextual Info: 1 GByte NANDrive SST85LD1001K Data Sheet The SST85LD1001K NANDrive solid-state drive SSD combines a NAND controller and 1 GByte of NAND flash in a multi-chip package. It provides complete ATA/IDE hard disk drive functionality in a small package for easy, space-saving mounting to a system motherboard.

Contextual Info: I CT E - 5 - 1 C T E - 4 5 C series ICTE SERIES 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS The ICTE series 1500 W transient suppressors is designed specifically for protection of CMOS, NMOS, BiMOS, and other intergrated circuits available today for TTL,

Contextual Info: P r e l i m i n a r y v 1 .3 54SXFamily FPGAs RadTolerant and HiRcl Features • 100%Resource Utilization with 100%Pin Locking R a d T o l e r a n t 5 4 S X F am i l y • Mxed Voltage Support— 3.3VOperation with 5.0VInput Tolerance • Tested Total IonizingDose TID Survivability Level

Contextual Info: Æ ic t e ! v 3.0 - m 40MX and 42MX Families FPGAs Features • Q M L C e rtific a tio n High C a p a c ity • C eram ic Devices A va ila b le to DSCCSM D • S ingle C hip A S IC A lte rn a tiv e Ea se of I n t e g r a t i o n

b23n20

Contextual Info: ^ c te -m v 2. 0 l 54SX Family FPGAs • • • • • 100%Resource Utilization with 100%Pin Locking 3.3VOperation with 5.0VInput Tolerance Very Low Power Consumption Deterministic, User-ControlIableTiming Unique, In-System Diagnostic and Debug capability with

2N0718A

Contextual Info: Ca ta Ioggymmà ry Sheet This document is a summary description of this device. Refer to the detailed product datasheet or manufacturing division for details. Catalog ID 19710 Microsemi Corp. / Watertown Division 9/22/98 2N0718A ID iv is io n P h o n e : 6 1 7 9 2 6 - 0 4 0 4

Contextual Info: ^ M iQ ftc A N P M x ie e r io N ,TCO . A IO . AM # W KO OCT* ano V' /am. ZO N E I L T R o e s c ft im r io H I O ATS ' "" i . ' L At/GEQ MOTE 3 £ .5 16-14-75 t ’1 % % / £ - ¿ - 7¿ -7,-a,-9 / / •[ O B S - lr tr S £ ' € / t J> DS 6 - Z B -77

STR 3230

Abstract: 280880
Contextual Info: LC2/LC4 BASIC Version 2.0/3.0 July 1994 Form 201.6 O R T O 2 2 43044 Business Park Drive »Temecula, CA 92590-3614 Phone: 800/321-OPTO 6786 or 909/695-3000 Fax: 800/832-0 PTO (6786) or 909/695-2712 Internet Web site: http://www.opto22.com Product Support Services:

BA05FP

Abstract: diode T325 5443 1d4 crc 3f5 1 t324 T339 T346 t393 TLR124 transistor t349
Contextual Info: MF1447-02 S1R72803F00A Technical Manual IEEE1394 Controller S1R75801F00A S1R72803F00A Technical Manual S1R72803F00A Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epsondevice.com/ First issue September,2001

1CTE-36

Abstract: 1N6373 1N6376 1N6379 1N6380 1N6381 1N6386 1N6388 1CTE-45 1CTE-12
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500 W . liia illll NUMBER Ma x i m u m R EV ER SE STAND-OFF VOLTAGE Vf VOUS reverse LEAKAGE at V„ (ua) MINIMUM BREA KD O W N g iig ilf llllliä « at 1 0 mA V„ (Volts) MAXIMUM C LAM PIN G VOLTAGE at I.-1 OA

Contextual Info: W ie te l Preüminary - m v1 . 2 54SXFamily FPGAs RadTolerant and HiRcl Features • 100%Resource Utilization with 100%Pin Locking R a d T o l e r a n t 5 4 S X F am i l y • Mxed Voltage Support— 3.3VOperation with 5.0VInput

A12L

Abstract: IDT707278
Contextual Info: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT707278S/L Features ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns

ird8

Abstract: LRD12 54SX32 ic tny 176 TNY 227 TNY 251
Contextual Info: ^ c te l P re lim in a ry v l.1 54SX Family FPGAs RadTolerant and HiRel F e a tu re s R a d T o le r a n t 5 4 S X F a m ily • • • • • Tested Total Ionizing Dose TID Survivability Level Devices Available from Tested Lots Radiation Performance to 100K Rads

LEM LC 500-S

Abstract: KL SN 102 94v SCR M21C STM CL-70 scr ky 202 TFK S 417 T LX 2272 fcf - 4 94v - 0 _ 1 2ty nte tfk 914
Contextual Info: M O S S * l5 ]ï& M O S Integrated Circuit PD17010 7 " '- f Jls • i F 4^ 7 — — >*f • h • '> > ? V =3- 7 7 ° * 7 ^ □ □ > h □ - ^ //P D 1 7 0 1 0 f i , x - i v ? J U ••J-D - — - > ? ' • 4 t'-y i- • ■> > 'y 7° C M O S v - i ÿ - p z i > h □ — -ÿT 'T o

OT359

Abstract: ba033
Contextual Info: MF1447-02 S1R72803F00A Technical Manual IEEE1394 Controller S1R75801F00A S1R72803F00A Technical Manual S1R72803F00A Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epsondevice.com/ First issue September,2001

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - ICTE Low Clamping Specifications - Electrical Characteristics j 10/1000jjs | 10/1000jjs i Maximum I Maximum | Maximum 10/1000jjs Rated j Minimum j Stand By ! Clamping j Clamping jRated Peak