LD 1170 Search Results

22a ic

Abstract: FQA22P10
Contextual Info: QFET P-CHANNEL FQA22P10 FEATURES BVqss = 00V Advanced New Design R d s ON = 0 1 2 5 Î2 Avalanche Rugged Technology lD = -2 4 A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 40nC (Typ.)

Contextual Info: HITACHI/ OPTOELECTRONICS IflE D • MHTbSGS HL1221B DOIDÔTQ InGaAsP LD Description HL1221B is a 1.2 jnm InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com­ munications equipment. The laser beam is output from the connected

IL030

Abstract: Q5555 3750VAC
Contextual Info: SIEMENS IL30/31/55 ILD30/31/55 ILQ30/31/55 SINGLE CHANNEL DUAL CHANNEL QUAD CHANNEL PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches mm IL30/31/55 (Single Channel) f3l [9l Anode (T~ t 243 (6.30) .256 (6 50) / lD Cathode f2~ The IL30/31/55 are equivalent to MCA230/

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BP. BS For Speaker Networks Series I Non-polarized series for crossover networks in Hi-Fi sound systems Excellent frequency characteristics Close capacitance tolerance J k lD Load life of 2000 hours at 85°C BP series have voltage range of 50V, 100V, 200V

HL1221A

Abstract: HL1221AC HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOEL ECT RONICS 54E D • OGlSGfi? 7 5 b I 44^205 InGaAsP LD HL1221 A/AC Description The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.

Contextual Info: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Li l ' ~ O S ' Description F 'M '- f r f HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com ­

HL1221C

Abstract: Hitachi Scans-001
Contextual Info: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Lil'~ O S' Description Z7 HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com ­ m unications and various other types of optical

Contextual Info: Molded Chip Film Capacitor NFC Series SURFACE MOUNT METALLIZED POLYESTER FILM CAPACITORS • • • • • • M O LD ED C O NSTRU CTIO N W IT H FLAM E RETARD ANT RESIN U L 9 4 -V -0 W ID E VOLTAGE SELECTION EXCELLEN T FREQUENCY CHARACTERISTICS BOTH FLOW A N D REFLOW SO LDERING APPLICABLE

Contextual Info: HITACHI/ OPTOELECTRONICS 54E D • 4 4 ^ 2 0 5 OGlSGfi? 75b I H L 1 2 2 1 A /A C Description InGaAsP LD The HL1221A/AC are 1.2 pm band InGaAsP laser diodes with a double heterodyne structure. They are suitable as light sources in fiberoptic communications and various other types of optical applications.

CH1262

Abstract: CH1223 CH1265 CH1266
Contextual Info: CH12 65/12 66 •■■ microelectronics Originate Mode/Answer Mode FSK RECEIVE FI LTER/SOFT-LIM ITER 1170/2125 Hz T h e s o ft lim ite r p ro v id e s 38 dB a d d itio n a l lin e a r g a in fo r th re s h o ld level s ig n a ls a n d c lip s on la rg e r in p u ts . In

Contextual Info: C H 1 2 6 5 /1266 •■li microelectronics Originate Mode/Answer Mode FSK RECEIVE FI LTER/SOFT-LI MITER 1170/2125 Hz The so ft lim ite r provides 38 dB a d d itio n a l linear gain fo r th re s h o ld level signals and clip s on larger inputs. In c o n ju n c tio n w ith a hard lim ite r such as is in clu d e d in the

ld18a

Contextual Info: N ovem ber 1996 National Semiconductor N D P 6020 / N D B 6020 N-Channel Logic Level Enhancement M ode Field Effect Transistor G eneral Description Features These lo gic level N-C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are p ro d u ce d using

811728

Contextual Info: LIN Doc LimMTY LX8117-xx/8117A-xx M I C R O E L E C T R O N I C S T he I n f i n i t e P o w e r 8 0 0 m A & 1 A L ow D ropout P ositive R egulators I n n o v a t i o n o f P r o d u c t i o n DESCRIPTION The LX811 7 /8 1 17A series are positive Low D ropout LD O regulators. At the

11733

Contextual Info: O IlN flN fZ Y M I c k o T he I n f i n i t e e L P o w e r e c T k o o f N ic s I n n o v a t i o n 8 0 0 m A & 1A Low P D ropout r o d u c t i o n DESCRIPTION The LX811 7 /8 1 17A series are positive Low D ropout LD O regulators. At the designed m axim um load current, the

IC LM380

Abstract: LM380 ic LM380 audio power amplifier
Contextual Info: LM380 National Semiconductor LM380 Audio Power Amplifier General Description T h e LM 30O is a p o w e r a u d io a m p lifie r fo r c o n s u m e r a p p lic a ­ A s e le c te d p a rt fo r m o re p o w e r o n h ig h e r s u p p ly v o lta g e s is tio n . In o rd e r to h o ld s y s te m c o s t to a m in im u m , g a in is

capacitor

Abstract: smd resistor 151 resistor smd 103 resistor smd 104 SMD diode 132 capacitor smd 106 smd diode 104 103 smd resistor CAPACITOR SMD SMD 106 CAPACITOR
Contextual Info: Alphabetical Product Listing SERIES PAGE DESCRIPTION SERIES DESCRIPTION PAGE 144 -14 6 NACE Aluminum Electrolytic Capacitor SMD 128,129 NRC NACEN Aluminum Electrolytic Capacitor (SMD) 136 NRCT NACEW Aluminum Electrolytic Capacitor (SMD) 130,131 NRD NACS

9acf

Abstract: 108 046f COP943 BD148 7 segment LD 1106 AS AN-1099 COP888EG 9D13 BDC66C 559 9D01
Contextual Info: National Semiconductor Application Note 1099 Richard F. Zarr March 1998 INTRODUCTION Everyone is familiar with multi-tasking operating systems such as Microsoft Windows and UNIX ® . These systems have the advantages of executing several tasks at once allowing a single CPU to do the job of several. These systems

108 046f

Abstract: BD106A 03B3 8002 1030 8c 617 transistor 9D31 BC433 BC4332 cop8780 BD428
Contextual Info: National Semiconductor Application Note 1099 Richard F. Zarr March 1998 INTRODUCTION Everyone is familiar with multi-tasking operating systems such as Microsoft Windows and UNIX ® . These systems have the advantages of executing several tasks at once allowing a single CPU to do the job of several. These systems

Contextual Info: 550-3399 1 n-H thru 1.OmH - BS 9751 N0001 Pattern A 38.10 (6.3S) (38.10) NOTE: FOR LOWER INDUCTANCE VALUES REFER TO 551-5172 SERIES (2.81) — ^M O ULD ED INSULATION 3 020 'D' INDUCTANCE TOLERANCE (SILVER - 10%) (0.51)01 A TINNEO,SOLID COPPER WIRE 'C' SECOND SIGNIFICANT FIGURE OR

CTC 1351

Abstract: transistor ctc 1351 CTC 1351 transistor pin detail CTC 1351 data sheet CTC 1351 transistor ctc 1403 CTC 1351 transistor data sheet 3ED2 04D8 3E68
Contextual Info: TECHNICAL CONSIDERATIONS WHEN IMPLEMENTING LOCALTALK Zilog TECHNICAL CONSIDERATIONS WHEN IMPLEMENTING LOCALTALK LINK ACCESS PROTOCOL T he LLAP Protocol is an important part of the Appletalk network system. It manages access to the node-to-node transmission of network data packets, governs access to the link, and

CTC 1351

Abstract: transistor ctc 1351 CTC 1351 data sheet CTC 1351 transistor ctc 1403 04D8 CTC 1351 transistor pin detail SP 1191 WR10 Z80180
Contextual Info: APPLICATION NOTE 1 TECHNICAL CONSIDERATIONS WHEN IMPLEMENTING LOCALTALK LINK ACCESS PROTOCOL T 13 he LLAP Protocol is an important part of the Appletalk network system. It manages access to the node-to-node transmission of network data packets, governs access to the

CTC 1351

Abstract: transistor ctc 1351 CTC 1351 transistor CTC 1351 data sheet ctc 1403 000002ec ED52 0000025C 3E68 000002ed
Contextual Info: TECHNICAL CONSIDERATIONS WHEN IMPLEMENTING LOCALTALK Zilog TECHNICAL CONSIDERATIONS WHEN IMPLEMENTING LOCALTALK LINK ACCESS PROTOCOL T he LLAP Protocol is an important part of the Appletalk network system. It manages access to the node-to-node transmission of network data packets, governs access to the link, and

Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT5010

Abstract: LD 1170
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O APT5010JN APT5012JN S ISOTOP 500V 500V 48.0A 0.1 Oí2 43.0A 0.1 2Ü. "UL Recognized" File No. E145592 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol APT 5010UN APT