5012J Search Results
5012J Price and Stock
Vishay Roederstein MKP1848C55012JP2CAP FILM 5UF 5% 1.2KVDC RADIAL |
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MKP1848C55012JP2 | Bulk | 141 | 1 |
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Vishay Roederstein MKP1848C55012JK2CAP FILM 5UF 5% 1.2KVDC RADIAL |
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MKP1848C55012JK2 | Bulk | 98 | 1 |
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MKP1848C55012JK2 | Bulk | 1 |
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GALCO INDUSTRIAL ELECTRONICS 55012J1/4-20 X 3/4 HEX HEAD BOLT ZP. S |
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55012J | 1 |
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API Delevan 2150-12JFIXED IND 3.3UH 555MA 1 OHM TH |
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2150-12J | Reel | 1,000 |
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2150-12J |
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Microchip Technology Inc APT5012JNMOSFET N-CH 500V 43A ISOTOP |
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APT5012JN | Tray |
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5012J Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ADVANCED POWER Te c h n o l o g y 0 5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2 |
OCR Scan |
APT5012JNU2 5012JNU2 OT-227 | |
Contextual Info: A dvanced P o w er Te c h n o lo g y * 5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. |
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APT5012JNU2 5012JNU2 OT-227 Page68 | |
Contextual Info: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN 5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227 | |
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a 5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd |
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APT5012JNU3 5012JNU3 | |
c 503 K
Abstract: lg ds 325
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APT5012JNU3 5012JNU3 OT-227 c 503 K lg ds 325 | |
Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k 5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS |
OCR Scan |
APT5012JNU2 5012JNU2 OT-227 | |
5010JN
Abstract: APT5010 5012JN APT 5060
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E145592 5010JN 5012JN APT5010/5012JN OT-227 APT5010 APT 5060 | |
5012JN
Abstract: APT5012JNU3 APTS012JNU3 APT5012
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APT5012JNU3 5012JNU3 OT-227 00Dlbà 5012JN APTS012JNU3 APT5012 | |
APT5012JNU3Contextual Info: A dvanced P o w er Te c h n o l o g y ' -O A 5012JNU3 500V 43A 0.12Í2 ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd I I DM’ IM V GS PD t j -t s i g All Ratings: = 2 5 °C unless otherwise specified. |
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APT5012JNU3 5012JNU3 OT-227 APT5012JNU3 | |
APT5010
Abstract: LD 1170
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APT5010JN APT5012JN E145592 5010UN 5012J OT-227 APT5010 LD 1170 | |
APT5010JN
Abstract: APT5010 5012JN APT5012JN 5010J
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APT5010JN APT5012JN E145592 5010JN 5012JN Inducti11 APT5010JN APT5010 5012JN APT5012JN 5010J | |
APT5012JNU2
Abstract: ST-200 transformer DIODE BAT 17
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APT5012JNU2 5012JNU2 OT-227 ST-200 transformer DIODE BAT 17 | |
APT5012JNU2
Abstract: tl3060 rrmk 1
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APT5012JNU2 5012JWU2 OT-227 APT5012JNU2 tl3060 rrmk 1 |