LD SMD TRANSISTOR Search Results

SMU10P

Abstract: SMD SMU10P05 smu10p05 SMD10P05 smd10p SMU10
Contextual Info: Tem ic SMD/SMU10P05 Siliconix P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (Π) lD a (A) -5 0 0.28 -1 0 s T O -2 5 1 Q T O -252 O O o G D it It Drain Connected to Tab S Top View Order Number: G SMD10P05 D S P-Channel M OSFET

6 pin TRANSISTOR SMD CODE PA

Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Contextual Info: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol

cdfp4-f16

Abstract: smd transistor Q5 SMD Transistors nc smd transistor 304
Contextual Info: HS-6254RH S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

transistor smd MJ 145

Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Contextual Info: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter

cdfp4-f16

Abstract: E4 SMD TRANSISTOR CDFP4-F16 reference ISL73096RHVX 5962F0721801V9A AN1503 ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a

cdfp4-f16

Abstract: smd transistor FY smd transistor ka HS6254
Contextual Info: HS-6254RH HARRIS S E M I C O N D U C T O R PRELIMINARY Radiation Hardened Ultra High Frequency NPN Transistor Array October 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements . • Radiation Environment - Gamma Dose y . 3 x 1 0 RAD(Si)

cdfp4-f16

Abstract: smd transistor 304
Contextual Info: HS-6254RH HARRIS S E M I C O N D U C T O R Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

smd transistor 304

Abstract: cdfp4-f16
Contextual Info: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

SMU25N05-45L

Abstract: SMD25N05-45L smu25n05 SMD25N05 SMD25N0545L
Contextual Info: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary VDS V 50 rDS(on) (Q) 0.045 Id 3 (A) 25 TO-251 TO -252 D Q o It o o— ^ Drain Connected to Tab G D S Top View Order Number:

Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n

5962F0721805VXC

Contextual Info: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of

IRF3205 smd

Contextual Info: MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 3.30 ±0.10 TO-220 2.54 ±0.20 ø3.18 ±0.10 0.70 15.80 ±0.20 ● Advanced Process Technology ● Ultra Low On-Resistance (1.00x45°) 15.87 ±0.20 6.68 ±0.20

transistor smd Q 865

Abstract: SMD footprint design smd transistor 647 046 sot428 PHD3055E PHB3055E PHP3055E SC18 T0220AB T404
Contextual Info: Preliminary specification Philips Semiconductors TrenchMOS transistor SYMBOL FEATURES • • • • • PHP3055E, PHB3055E, PHD3055E QUICK REFERENCE DATA d ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance

11n06

Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Contextual Info: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance

CDFP4-F16

Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The

Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF1302S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Operating Temperature 0.1max +0.1 1.27-0.1 Repetitive Avalanche Allowed up to Tjmax +0.1 0.81-0.1 2.54 2.54

ld smd transistor

Abstract: dsa0023459 KRF9610S
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF9610S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount +0.1 1.27-0.1 +0.2 4.57-0.2 Available in Tape & Reel 5 .2 8 -0+ 0.2.2 Simple Drive Requirements 0.1max +0.1 1.27-0.1 Fast Switching +0.1 0.81-0.1 2.54

smd code book B3 transistor

Contextual Info: SPP 80N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.006 £2 A 80 b V 30 • dy/df rated

100V Single P-Channel HEXFET MOSFET

Abstract: ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15

ld smd transistor

Abstract: KRFR9310
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRFR9310 TO-252 Features Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.8 0.50-0.7 P-Channel 0.127 max 2.3 Fully Avalanche Rated +0.28 1.50-0.1 Avanced Process Technology +0.1 0.60-0.1 +0.15

Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRFR6215 TO-252 Features Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.8 0.50-0.7 +0.1 0.80-0.1 0.127 max P-Channel 2.3 +0.28 1.50-0.1 Fast Switching +0.1 0.60-0.1 +0.15 4.60-0.15 Fully Avalanche Rated

ld smd transistor

Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax

Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF9640S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount Available in Tape & Reel +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Fast Switching Ease of Paralleling 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54

book FOR D 1047

Contextual Info: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated