Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LDMOS PUSH PULL Search Results

    LDMOS PUSH PULL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    BLA1011-2 Rochester Electronics LLC BLA1011-2 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    LDMOS PUSH PULL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Capacitor Tantal SMD

    Abstract: capacitor 0,1 k 250 mkt philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original
    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD capacitor 0,1 k 250 mkt philips

    2222-581

    Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain


    Original
    PDF M3D427 BLF2048 OT539A 603516/09/pp11 2222-581 capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27

    Capacitor Tantal SMD

    Abstract: Tantal SMD transistor SMD 2201
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original
    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp12 Capacitor Tantal SMD Tantal SMD transistor SMD 2201

    transistor 2201

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original
    PDF M3D427 BLF2048 BLF2048 OT539A 125108/00/01/pp8 transistor 2201

    Capacitor Tantal SMD

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Nov 23 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original
    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD

    BLF2048

    Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR PHILIPS MKT 373 MGT007 w3 smd transistor MGT014 MGT012
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 2000 Feb 17 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES BLF2048


    Original
    PDF M3D427 BLF2048 OT539A 603516/09/pp12 BLF2048 capacitor MKT Philips PHILIPS MKT CAPACITOR PHILIPS MKT 373 MGT007 w3 smd transistor MGT014 MGT012

    BLF2022-120

    Abstract: 3155 power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120


    Original
    PDF M3D427 BLF2022-120 OT539A SCA75 613524/02/pp8 BLF2022-120 3155 power transistor

    SOT539A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 2001 Jan 04 2003 Mar 07 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120


    Original
    PDF M3D427 BLF2022-120 15-Aug-02) SOT539A

    BLF2022-120

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain


    Original
    PDF M3D427 BLF2022-120 OT539A 603516/09/pp7 BLF2022-120 BP317

    LDU601C

    Abstract: 600W TRANSISTOR AUDIO AMPLIFIER PTFA043002E M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER 600w power amplifier GR01790 LDU60 300w amplifier rf amplifier 100w
    Text: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •


    Original
    PDF LDU601C 27dBc PTFA043002E GR01790 LDU601C 600W TRANSISTOR AUDIO AMPLIFIER M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER 600w power amplifier GR01790 LDU60 300w amplifier rf amplifier 100w

    PTFA043002E

    Abstract: LDU601C M2.5 torque settings PTF*A043002E PTFA043002 LDU60 100W 12 volt ldmos rm2005
    Text: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •


    Original
    PDF LDU601C 27dBc PTFA043002E GR01790 LDU601C M2.5 torque settings PTF*A043002E PTFA043002 LDU60 100W 12 volt ldmos rm2005

    dvb-t transmitters

    Abstract: 80w audio amplifier with tone control BLF878 LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier
    Text: LDU661C 600W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates micro-strip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit.


    Original
    PDF LDU661C 27dBc 100KHz BLF878 dvb-t transmitters 80w audio amplifier with tone control LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier

    LDL8

    Abstract: PTF141501A 200w AUDIO AMPLIFIER 200w audio power amplifier 200W PUSH-PULL LDL80 LDMOS digital
    Text: LDL80 80W DAB LDMos Technology Designed for Digital Audio Broadcasting, this amplifier incorporates microstrip technology and push-pull LDMos Devices to enhance ruggedness and reliability. • • • • • • • • 1450 - 1500 MHz 28 ÷32 V 30V Nominal


    Original
    PDF LDL80 80Wrms PTF141501A 5x125 GR00375 LDL8 200w AUDIO AMPLIFIER 200w audio power amplifier 200W PUSH-PULL LDL80 LDMOS digital

    5.1 audio power amplifier 400w

    Abstract: MRFA 2604 LDU400C LDU400C-R amplifier 400W MRF377 RF amplifier 400W 300w rf amplifier LDMOS digital GR002
    Text: LDU400C-R 400W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • • • • • •


    Original
    PDF LDU400C-R 27dBc MRF377 115x85x5 GR00254 5.1 audio power amplifier 400w MRFA 2604 LDU400C LDU400C-R amplifier 400W RF amplifier 400W 300w rf amplifier LDMOS digital GR002

    LDU300

    Abstract: MRF372 LDMOS digital power 470-860mhz w thermal compound wps PAG24
    Text: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal


    Original
    PDF LDU300 300Wps 250Wps MRF372 175x85x30 GR00164 LDU300 LDMOS digital power 470-860mhz w thermal compound wps PAG24

    200W PUSH-PULL

    Abstract: cw 180 LDU200-S power 470-860mhz w SD56120M thermal compound wps TRANSCLAMP-1
    Text: LDU200-S 200W peak sync LDMOS Technology Designed for anolog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal


    Original
    PDF LDU200-S 200Wps 150Wps SD56120M 175x85x30 GR00247 200W PUSH-PULL cw 180 LDU200-S power 470-860mhz w thermal compound wps TRANSCLAMP-1

    agilent ads balun

    Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
    Text: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data


    Original
    PDF EB212 agilent ads balun EB212 MRF19125 MRF21180 J493 advanced design system

    BLF645

    Abstract: C4532X7R1E475MT020U RF35
    Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The


    Original
    PDF BLF645 BLF645 C4532X7R1E475MT020U RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The


    Original
    PDF BLF645 BLF645

    LM780L05ACM-ND

    Abstract: PTFB193408SVV1R250XTMA1
    Text: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input


    Original
    PDF PTFB193408SV PTFB193408SV 340-watt H-34275G-6/2 LM780L05ACM-ND PTFB193408SVV1R250XTMA1

    NEM091803S-28

    Abstract: transistor NEC D 880 NEC JAPAN
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28 N-CHANNEL SILICON POWER LDMOS FET FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER DESCRIPTION The NEM091803S-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 0.8 to 1.0 GHz applications, such as, GSM/EDGE/N-CDMA cellular base station.


    Original
    PDF NEM091803S-28 NEM091803S-28 transistor NEC D 880 NEC JAPAN

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 25 Watts Push - Pull


    Original
    PDF SK204

    BLF861A

    Abstract: BLF861 TRANSISTOR 318
    Text: BLF861A UHF POWER LDMOS TRANSISTOR DESCRIPTION: The ASI BLF861A ia a Silicon Nchannel enhancement mode lateral DMOS push-pull transistor. PACKAGE STYLE .385X.850 4LFG FEATURES: • Internal input-output matching • Omnigold Metalization System MAXIMUM RATINGS


    Original
    PDF BLF861A BLF861A BLF861 TRANSISTOR 318

    smd transistor ne c2

    Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
    Text: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor


    OCR Scan
    PDF BLF2048 OT539A smd transistor ne c2 smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30