SOT539A Search Results

philips H1

Abstract: sot539a
Contextual Info: PDF: 1999 Dec 09 Philips Semiconductors Package outline Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT539A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F D1 U1 B q C w2 M C M H1 1 c

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF power LDMOS transistor Objective specification 1998 Nov 19 Objective specification UHF power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION • Easy power control

Capacitor Tantal SMD

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Nov 23 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

Capacitor Tantal SMD

Abstract: capacitor 0,1 k 250 mkt philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

SOT539A

Contextual Info: PDF: 2000 Mar 08 Philips Semiconductors Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

2222-581

Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain

BLF2022-120

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain

transistor 2201

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

SOT539A

Contextual Info: 4 CD FM SOT539A CDFM4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 29 November 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning

SOT539

Contextual Info: Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L A 3 E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

Capacitor Tantal SMD

Abstract: Tantal SMD transistor SMD 2201
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS P relim inary specification UHF power LDMOS transistor BLF2048 FEATURES PINNING - SOT539A • H igh p o w e r ga in PIN DESCRIPTION • E a s y p o w e r c o n tro l 1 d ra in 1 • E x c e lle n t ru g g e d n e s s

BLF6G22-180PN

Contextual Info: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

SOT539A

Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
Contextual Info: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

150P

Abstract: BLF7G27LS-150P ACPR1980 ACPR885
Contextual Info: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

1800 ldmos

Abstract: SOT539A
Contextual Info: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

TRANSISTOR 726

Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

BLF6G20(S)-45

Contextual Info: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF578

Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
Contextual Info: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W

Contextual Info: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance

Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor L33

Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
Contextual Info: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog