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    HAF1002S Renesas Electronics Corporation Thermal Shut Down Functioned MOSFET, LDPAK, /Embossed Tape Visit Renesas Electronics Corporation
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    Samtec Inc HSEC8-116-01-L-DP-A-K

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    LDPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1620

    Abstract: 2SK740
    Text: 2SK1620 L , 2SK1620 S Silicon N-Channel MOS FET Application LDPAK High speed power switching Features 1 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


    Original     		PDF 2SK1620 2SK740. 2SK740

    H5N2001LD

    Abstract: H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C
    Text: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A Package name: LDPAK (L )


    Original     		PDF H5N2001LD, H5N2001LS, H5N2001LM REJ03G1339-0600 PRSS0004AE-A PRSS0004AE-B H5N2001LD H5N2001LS PRSS0004AE-C H5N2001LD H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRW2502A S Silicon Schottky Barrier Diode for Rectifying ADE-208-208B (Z) Rev. 2 Jan. 1996 Features • • • • Low forward voltage drop and suitable for high effifiency rectifying. Same power as TO-220AB. Small outline compared with TO-220AB. LDPAK(S) package is suitable for high density surface mounting.


    Original     		PDF HRW2502A ADE-208-208B O-220AB. W2502A Hitachi DSA001653

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK3076 L ,2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jul. 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 D


    Original     		PDF 2SK3076 ADE-208-656 D-85622 Hitachi DSA00276

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK3150 L ,2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750(Z) 1st. Edition January 1999 Features • • • Low on-resistance R DS =45mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3150 ADE-208-750 D-85622 Hitachi DSA002780

    2SK2737

    Abstract: 2SK2885 Hitachi DSA0044
    Text: 2SK2885 L , 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545A (Z) 2nd. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2


    Original     		PDF 2SK2885 ADE-208-545A 2SK2737 Hitachi DSA0044

    H7N0608LD

    Abstract: H7N0608LM H7N0608LS
    Text: H7N0608LD, H7N0608LS, H7N0608LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0144-0100Z Rev.1.00 Oct.30.2003 Features • Low on-resistance RDS on = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline LDPAK D 4 G 1


    Original     		PDF H7N0608LD, H7N0608LS, H7N0608LM REJ03G0144-0100Z H7N0608LS H7N0608LD H7N0608LD H7N0608LM

    2SK2958

    Abstract: Hitachi DSA0044
    Text: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2


    Original     		PDF 2SK2958 ADE-208-568B Hitachi DSA0044

    2SK3461

    Abstract: Hitachi DSA0076
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-944 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate


    Original     		PDF 2SK3461 ADE-208-944 Hitachi DSA0076

    FS10VS-12A

    Abstract: FS10VS-12A-T11
    Text: FS10VS-12A High-Speed Switching Use Nch Power MOS FET REJ03G0272-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 600 V rDS ON (max) : 0.94 Ω ID : 10 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain


    Original     		PDF FS10VS-12A REJ03G0272-0100 FS10VS-12A FS10VS-12A-T11

    FS7VS-12A

    Abstract: FS7VS-12A-T11
    Text: FS7VS-12A High-Speed Switching Use Nch Power MOS FET REJ03G0271-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 600 V rDS ON (max) : 1.3 Ω ID : 7 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain


    Original     		PDF FS7VS-12A REJ03G0271-0100 FS7VS-12A FS7VS-12A-T11

    RJK4013DPE

    Abstract: RJK4013DPE-00-J3
    Text: RJK4013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		PDF RJK4013DPE REJ03G1513-0200 PRSS0004AE-B RJK4013DPE RJK4013DPE-00-J3

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1527C Z 4th. Edition May 2002 Features • Low on-resistance RDS(on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline LDPAK 4 4 4 D


    Original     		PDF H7N0401LD, H7N0401LS, H7N0401LM ADE-208-1527C H7N0401LS H7N0401LD Hitachi DSA00280

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: 2SK3070 L ,2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4.5mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3070 ADE-208-684G D-85622 Hitachi DSA00280

    PM544

    Abstract: ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM
    Text: +2 -2 Packing form Non dry pack PRSS0004AC-A TO-220AB, TO-220ABV 50 PRSS0003AD-A TO-220FM, TO-220FMV 50 Non dry pack PRSS0003AE-A TO-220CFM, TO-220CFMV 50 Non dry pack PRSS0004AE-A LDPAK L , LDPAK(L)V 50 Non dry pack PRSS0004AE-B LDPAK(S)-(1), LDPAK(S)-(1)V


    Original     		PDF PRSS0004AC-A O-220FM, O-220FMV PRSS0003AE-A O-220CFM, O-220CFMV PRSS0004AE-A PRSS0004AE-B PRSS0004AE-C O-220AB, PM544 ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM

    2SJ384

    Abstract: ds 300 ds-300 75 v
    Text: 2SJ384 L , 2SJ384 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ384 ds 300 ds-300 75 v

    2SJ297

    Abstract: 2SJ291
    Text: 2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ297 2SJ291 2SJ291

    2SK2912

    Abstract: Hitachi DSA00238
    Text: 2SK2912 L , 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G


    Original     		PDF 2SK2912 ADE-208-495 Hitachi DSA00238

    RJK6012DPE-00-J3

    Abstract: RJK6012DPE
    Text: RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1481-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		PDF RJK6012DPE REJ03G1481-0200 PRSS0004AE-B RJK6012DPE-00-J3 RJK6012DPE

    RJK1008DPE

    Abstract: RJK1008DPE-00-J3
    Text: RJK1008DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1629-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS on : 11 mΩ (Max) • ID : 80 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 1. Gate


    Original     		PDF RJK1008DPE REJ03G1629-0100 PRSS0004AE-B RJK1008DPE RJK1008DPE-00-J3

    Untitled

    Abstract: No abstract text available
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(o„) = 4 m il typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK ADE-208-721B (Z) 3rd. Edition


    OCR Scan     		PDF 2SK3134 ADE-208-721B 2SK3134Ã 40815HITEC

    Untitled

    Abstract: No abstract text available
    Text: 2SK3150 L , 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK


    OCR Scan     		PDF 2SK3150

    2SJ215

    Abstract: 2SJ242
    Text: LjIE D Bi 44TbaOS □D12cm bDb « H i m 2SJ242 , 2SJ242 s - HITACHI/ OPTOELECTRONICS Silicon P Channel MOS FET Application LDPAK High speed power switching Features • • • • Low on—resistance High speed switching Low drive current


    OCR Scan     		PDF 44TbaOS 2SJ215. 0D13GG1 -2SJ242 2SJ242Â 2SJ215 2SJ242

    Untitled

    Abstract: No abstract text available
    Text: HRW1002AS Silicon Schottky Barrier Diode for Rectifying Features Pin Arrangement • Low forward voltage drop and suitable for high emnency rectifying. • Same power as TO-220AB. • Small outline compared with TO-220AB. • LDPAKCDpacJcage is suitable for high density


    OCR Scan     		PDF HRW1002AS O-220AB. HRW1002A W1002A_ HRW1002ACS)