LE 79A Search Results

Contextual Info: Catalog 1307'91 Revised 1D-00 RF Coax Connectors TNC Connectors, 75 Ohm Plugs, Crimp Hex Crimp and 0 Crimp Those c o n n o c to rs have be e n d e s ig n e d for o p tim u m p e rfo rm a n c e a n d have a true 75 o hm im p e d a n c e the c o m o le te le n g th of the c o n ­

CD4308A2

Contextual Info: O P i i — D 4 3 _ _ A 2 _ F owerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3¡ S C R P O W -R -B L O K M o d u le 25 Amperes/800 Volts Description:

IC 9141 ES

Contextual Info: Catalog 1 3 0 7 5 1 5 Issued 9 -9 9 RF Coax Connectors C ontinued BNC Connectors, 75 Ohm forT3/E3 Applications (Continued) R ig h t A n g le P lu g s , Crimp M 39012/ M ilitary N o . and/or Comm ents Part N o. ps r c— — 413588-8 Nickel rtS~ - Gold Nickel

Contextual Info: M itsubishi m icrocom puters M16C / 61 Group Description SING LE-CHIP 16-BIT CM OS M ICRO CO M PUTER Description The M16C/61 group of single-chip m icrocom puters are built using the high-perform ance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP.

M37733EHBFP

Abstract: ded 7516
Contextual Info: MITSUBISHI MICROCOMPUTERS M37733EHBXXXFP M37733EHBFS MO*0 a«»10 So«'eV P R O M V E R S IO N O F M 3 7 7 3 3 M H B X X X F P DESCRIPTION •S in g le power s u p p ly . 5 V - 10% The M 37733EHBXXXFP is a single-chip m icrocom puter using the

Contextual Info: SIEMENS SITAC AC Switches B R T11 B R T12 BRT 13 AC switch w ith ou t zero-voltage d e te cto r con sistin g o f two e le ctrica lly insulated lateral pow er ICs w hich integrate a th y ris to r system, a photo d e tector and noise suppression at the o u tput and an IR GaAs diode at the input.

1N4570A JANTX

Abstract: IN4569 IN4565 100-C 1N4565 1N4565A 1N4566 1N4566A 1N4574A 1N4584
Contextual Info: niCROSEilI CORP SIE D bllSflhS □ □ □ 1 ^ 3 2 S4M 1N4565&A thru 1N4584&A DO-7 SANTA A V.l. CA SC O T T SD 'U F. 17 For mare information ca 602 941-6300 FEA TU RES • 6.4 V ± 5 % Z E N E R V O LTA G E (N O T E 1) • JA N S EQU IVALENT AVA ILA B LE VIA SCO

SITAC AC Switches With Zero Voltage Switch BRT 22

Contextual Info: SIEMENS SITAC AC Switches BRT 21 BRT 22 BRT 23 AC switch with zero-voltage d e tector con sistin g o f tw o e le ctrica lly insulated lateral power ICs. These pow er ICs integrate a th yristo r system, a photo detector, noise sup pre ssion and a zero voltage switch at the ou tput and an IR GaAs diod e at the input. Turning on o c c u rs at

wg 99a

Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION T H JS D RA W ING C O PY R IG H T R E SE R V E D . IS 13 AMP U N P U B L ISH E D . BY AMP R E LE A SE D FO R P U B L IC A T IO N IN C O R PO R A T ED , HARR1S S U R G , P A . PR O D U C TS MA Y BE COVERED S V J. 5 .

Contextual Info: Catalog 1307191 Revised 10-00 RF Coax Connectors B N C C o n n e c to r s , 7 5 O h m Hex and 0 Crimp Plugs, Crimp T h e s e c o n n e c t o r s h a v e b e e n d e s ig n e d IT f o r o p t im u m p e r f o r m a n c e a n d h a v e a t r u e 7 5 o h m im p e d a n c e th e c o m p le t e

Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The N E 6 5 0 R 4 7 9 A is a 0.4 W G aA s M ES FET d e sig n e d fo r m iddle po w e r tra n sm itte r ap p lica tio n s for m obile co m m u n ica tio n ha nd set and base statio n system s. It is ca p a b le o f d e live rin g 0 .4 w a tt o f o u tp u t po w e r C W w ith high

d677a

Abstract: d676 D675A d681 d677
Contextual Info: SGS-THOMSON BD675/75A/77/ 77A/79/79A/81 BD676/76A/78/ 78A/80/80A/82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­ ration and are mounted in Jedec TO-126 plastic

LE 79A

Abstract: diode MARKING CODE 917 a915 BAS79D
Contextual Info: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C

Contextual Info: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @

NEC k 1760

Abstract: NE6510179A
Contextual Info: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm

Contextual Info: FUJITSU MICROELECTRONICS 23E D 37417b2 0007=143 b • T -M t-z v iz . F U JIT S U September 1988 Edition 1.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 81C 79A -W Is 8 1 9 2 w ords x 9 b its static random access m em ory

54F652

Abstract: 54F652FMQB 5962-E1232 5962-89558013X
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 10 PREPARED BY

FDA79N15

Contextual Info: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)

79a diode

Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
Contextual Info: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)

GRM40X7R104K025BL

Abstract: IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
Contextual Info: 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES_ • LOW COST PLASTIC SURFACE MOUNT PACKAGE NE6510179A NCDO lu 1 Units in mm PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: P o u t = + 31.5 dBm T Y P at V ds = 3.5 V, f = 900 MHz

connectors

Abstract: smd marking code bk4 Diodo b4 diodo zener a3 1a60 4p diodo DIODO 55 SMD diodo 4514 smd
Contextual Info: version 110125 Index | Indice Description Descrizione Family Famiglia Page Pagina For electrovalves, EN175301-803 style A, ISO 4400, former DIN 43650-A , 18 mm spacing, 2p+2G, female, with cable Per elettrovalvole, EN175301-803 stile A, ISO 4400, (ex DIN 43650-B),

BEE 7CA

Abstract: 2N1234 2N1234 JAN
Contextual Info: Ml L - S -1 9 5 0 0 /17?A E U ” '” r \ E LA e rU U S Z Z _ SUPERSEDING m i f tncr\r\ /i to / r I \ I 7 J U U / 1 / 7 V,t u / iI -» A_ / ANUgU&Ti lI oz TO 1I iV M L “ 0 - s e m i c o n d u c t o r d e v i c e *, t r a n s i s t o r . p n p .

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

Contextual Info: IDT74LVC1G79A 3.3V CMOS ADVANCE INFORMATION SINGLE POSITIVE-EDGETRIGGERED D-TYPE FLIPFLOP, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - This single positive-edge-triggered D-type flip-flop is built using advanced dual metal CMOS technology. The LVC1G79A is designed for 2.3V to 3.6V V cc operation.