LE28BU166 Search Results

LE28BU166 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
LE28BU166		Sanyo Semiconductor	Flash Memory for Portable Telephones Developed Jointly with SST	Original	PDF	22.18KB	4
LE28BU166		Sanyo Semiconductor	16,064-Megabit FlashBank Memory	Scan	PDF	2.91MB	45

LE28BU166 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LE28BU166 Contextual Info: PRODUCT INFORMATION Vol. 82 Flash Memory for Portable Telephones Developed Jointly with SST Industry’s first three-bank flash memory with on-chip EEPROM LE28BU166 Overview Due to the diversity and range of services offered and advances in the number of functions, the level of	Original	LE28BU166 LE28BU166	PDF
64336 Abstract: DDSM517 LE28BU166 3DQ10 643333 g0545 Contextual Info: Ordering number:ENN‘6433 CMOS 1C L E 28B U 166 IsA H m i 16.064-Megabit FlashBank Memory Preliminary FEATURES: Read Access Time • Single 2.5-Volt Read and W rite Operations - 90 and 120 ns • Separate Memory Banks for Code or Data ’ Latched Address and Data	OCR Scan	LE28BU166 064-Megabit Q0242b0 64336 DDSM517 LE28BU166 3DQ10 643333 g0545	PDF

Catalog Datasheet

Type

Document Tags

PDF

LE28BU166

Contextual Info: PRODUCT INFORMATION Vol. 82 Flash Memory for Portable Telephones Developed Jointly with SST Industry’s first three-bank flash memory with on-chip EEPROM LE28BU166 Overview Due to the diversity and range of services offered and advances in the number of functions, the level of

Original

LE28BU166 LE28BU166

PDF

64336

Abstract: DDSM517 LE28BU166 3DQ10 643333 g0545
Contextual Info: Ordering number:ENN‘6433 CMOS 1C L E 28B U 166 IsA H m i 16.064-Megabit FlashBank Memory Preliminary FEATURES: Read Access Time • Single 2.5-Volt Read and W rite Operations - 90 and 120 ns • Separate Memory Banks for Code or Data ’ Latched Address and Data

OCR Scan

LE28BU166 064-Megabit Q0242b0 64336 DDSM517 LE28BU166 3DQ10 643333 g0545

PDF