LEM 732 Search Results

APP-20

Abstract: long range locators diagram RXTUG 2H type of microprocessor in printer APP20 X101 power cable fault locator power transformers fault ranza printer high voltage transformer
Contextual Info: ASEA RELAYS INFORMATION From/Date RFR, D ecem ber 1984 Edition 2 RK 881-300 E Reg 7631 Page 1 F a u lt lo c a to r ty p e RANZA A fa u lt lo c ato r is a co m p lem en t to th e transm ission line p ro te c tiv e relay s. ASEA's fa u lt lo c a to r ty p e RANZA, which is required in one

ms 7254 ver 1.1

Abstract: K2354 528G L0734 ICS RS 3197 9800522B SKS 16F
Contextual Info: July 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E lem ents PU R V E Y O R S OF A L L Telephone: 7 8 -9 2 2 1 1 6 P.O. Box 4 6 0 9 , Pretoria Telex: 3 -0 1 8 1 SA In te l C o rp o ra tio n , 1979 p t y l t d ELECTRONIC C OM PON EN TS Pine Square

Contextual Info: MOTOROLA SN54LS385 SN74LS385 D E S C R IP T IO N — The S N 5 4 L S /7 4 L S 3 8 5 is a general-purpose a d d e r/s u b tra c to r w h ic h is u se fu l as a co m pa n ion p a rt to th e S N 54 L S /7 4 L S 38 4 tw o's-com p lem e n t m ultiplier. The LS385 contains

lem 731

Abstract: lem* 731
Contextual Info: blE J> m MITSUBISHI bEMRflST GD147b4 4Bñ « M I T S FU-44SLD-7 D I S C R E T E SC 1.3 mm LD Module with Singlemode Fiber Pigtail M odule ty p e F U -4 4 S L D -7 h a s been developed fo r co u p lin g a sin g lem o d e o p tic a l fib e r a n d a 1 .3 # m w a v e le n g th InG aA sP LD (L a se r d io d e).

Contextual Info: 7 iqot Preliminary Data Sheet May 1993 m A TaT Microelectronics T7351B FDDI Physical Layer Device Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI Physical Layer Device is a single VLSI component that implements the complete fiber

LEM 709

Abstract: lem 732 733 lem 733 Lem 747 BT-RT12180 20HR rechargeable battery DOD d1ca BT-RT1218 ge 734
Contextual Info: BT-RT 12180 12V18.0Ah BT-RT12180 is a general purpose battery with 5 years life in standby service, or more than 260 cycles at 100% D.O.D by cyclic use. As with all Ritar batteries, all RT models are rechargeable, highly efficient, leak proof and maintenance free.

732 LEM

Abstract: lem 718 T7352
Contextual Info: Data Sheet January 1994 % A H s .T ^ ^ ^ M ic ro e le c tro n ic s T7351B FDDI/T7352 TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution TheT7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

Contextual Info: DIM "A" PRODUCT NO. PACKING PACKAGING SPEC REVISIONS DESCRIPTION REV A B C D 73213-001 10 TRAY(210-364) 73213-002 15 TRAY(210-364) 73213-011 10 TAPING(GES-14-617) 73213-012 15 TAPING(GES-14-617) RELEASED ADDED P/N REVISED ADDED P/N ECN BY J70054 J80041 J80163

resistor NTC 10 0539

Abstract: 1b27 LEM 543 ntc 2,0 0539 Mil-T-23648 1B117 1b33 1B07 1B152 1b28
Contextual Info: A COMPANY MODEL 1B NTC Therm istors OF TECHNO Uncoated Disc, M aterial ‘B’, 2.5Q to 500Q APPLICATIONS Engineered for • Amplitude control • Temperature compensation • Liquid level indication • Temperature measurement • Flow measurement • Temperature control

WD-250C

Abstract: WD250C
Contextual Info: Advanced Control Components WIDE DYNAMIC RANGE LOW NOISE AMPLIFIERS Inc. Many applications require operation in an environment where very large spurious signals occur in the presence of low level signals of interest. In such cases a low noise figure is important in order to re­

Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R Available

Contextual Info: Am29C509 12 X 12-Bit CMOS Multiplier/Accumulator > 3 DISTINCTIVE CHARACTERISTICS H igh-speed 1 .6 - m s CMOS Process - 50-ns maximum clock rate supports real-time processing. 27-Bit Product A ccum ulation Result - Provides 24-bit product plus 3-bit extended product.

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

tag 9035

Abstract: 9035 tag 2594 dc/Triac/TRIAC tag 9035
Contextual Info: Integrated Device Technology, Inc. FAST CMOS OCTAL REGISTER TRANSCEIVER WITH PARITY FEATURES • • • • • PRELIMINARY IDT73210/A/B IDT73211/A/B • 73210/211 Single-level pipeline register from Port A to Port B • 73210 Two level pipeline register from Port B to Port A

PT 8519

Abstract: PT 4207 2SC4227 marking R34
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

Rm73B1E

Abstract: RM73 RM73B2A RM73B2H RM73B3A RM73B2B RN73E2A koa RM73 RM73B2E KOA Speer Electronics RM73B1
Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

piano Generator cmos

Abstract: HT3250 5440
Contextual Info: HOLTEK r y ^ HT3250 25 Key Piano/Organ with 15 Melodies Features • • • • • C M O S M e ta l-G a te tech n ology O p e ra tin g v o lta g e : 2 .4 V ~ 5 V Low sta n d -b y cu rre n t: l|xA V D D =3V 25 d irect k e y in p u ts, ton e a r e a = F 3 ~ F 5

Contextual Info: Introduction The V r 4100 microprocessor is a low-cost, low-power microprocessor that is compatible with the M IPS I, MIPS II, and MIPS III Instruction Set Architecture ISA , except for the Floating-point operating instructions, LL/LLD instruction and SC/SCD instruction.

876-1421

Contextual Info: > O LmFmiTY M i c- K o T he I n f i n i t e P h i h c: i o whr of k o I N i . n n o H s Transient I mmune Undervoltage Sensing P roducti on v a t i o n KEY DESCRIPTION Circuit D ata FEATURES FULLY CHARACTERIZED, TRANSIENT IMMUNE INPUT STAGE (See Product Highlight

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

2SC4227

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Vantis PRO PROGRAMMING SW

Abstract: VANTIS PRO
Contextual Info: FINAL BEYOND PERFORMANCE COM’L: -5/7/10/12/15 IND: -7/10/12/14/18 M A C H 1 3 1 S P -5 /7 /1 0 /1 2 /1 5 High-Performance EE CMOS In-System Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ JTAG-compatible, 5-V in-system programming

Y043

Abstract: Am29818 PD3024 Am29818A
Contextual Info: A m 2 9 8 1 8 A Pipeline Register with SSR Diagnostics Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ High-speed noninverting 8-bit parallel register for any data path o r pipelining application ■ WCS W ritable Control Store pipeline register