LEM HA 2000 Search Results

100AH

Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES 豊富なラインアップ形状と標準低Rdc、大電流シリーズでお客様の広範囲

100-NP

Abstract: lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components
Contextual Info: Current Transducer LAX SERIES Ref LAX 100-NP IPN = 50-100 A Provisional Datasheet Electrical Data Specifications Symbol 50 At Unit Min Typ 100 At Max Min Conditions Typ Max 1 IPN At Primary current, measuring range IP At -150 +150 -160 Measuring resistance

lem lt 100 p

Abstract: N24-N2 Lem LT 80 p lem current lt 100 LG jtag
Contextual Info: P R E L IM IN A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NO TE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

LEM 3225

Abstract: LEM Taiyo Yuden JISC0051
Contextual Info: 信号系巻線チップインダクタ WOUND CHIP INDUCTORS FOR SIGNAL LINE LB SERIES M TYPE OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES YLBM2016（新製品） 下面電極構造を採用により高Q化および狭公差化を実現しました。信号

Contextual Info: * TRIPLE 4-INPUT MULTIPLEXER WITH ENABLE SYNERGY SY100S371 SEMICONDUCTOR FEATURES • ■ Max. propagation delay of 1000ps ■ Ie e DESCRIPTION The SY100S371 is an ultra-fast triple 4-input multiplexer with true and complementary outputs designed for use in

Contextual Info: 3N163. 3N164. LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)

2SB113

Abstract: 2SD1665
Contextual Info: 2SD1665M/2SD1857 Is ~7 > V 7s £ /Transistors x 2 S D 1 6 6 2 S D 1 8 5 5 M e ^ # ' > 7 ^ 7 V - ^ N P N '> • ; = ] > h Epitaxal Planar N PN Silicon Transistors /Medium Power Amp. 7 • • JF^Tj-;i[2|/Dimensions Unit : mm 1) raifi/3: X ' $> -5 o B V c e o = 120V

CY54FCT399CTLMB

Abstract: CY74FCT399ATPC CY74FCT399ATQC CY74FCT399CTPC CY74FCT399CTSOC
Contextual Info: CY54/74FCT399T CYPRESS Features Q uad 2-Input R egister • Function, pinout and drive compatible with FCT and F logic • FCT-C speed at 6.1 ns mux. Com'] FCT-A speed at 7.0 ns max. (Com’l) • Reduced Voh (typically = 3.3V) • ESD > 2000V • Fully compatible with TTL input and

Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BSH107 N-channel enhancement mode MOS transistor Objective specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13b Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS Philips S e m ico n d u cto rs

Contextual Info: Tem ic MOD500B/500C Siliconix Four N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 500 0.43 13 Leadform O ptions MOD500B . MQD500C . •uf Bent Down Bent Up Ô s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

a10hc

Contextual Info: HN27C512 Series Maintenance Only 512K 64K x 8-bit UV EPROM • DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low

SMD diode b24

Abstract: marking LZ smd diode PLVA2659A t33 smd lz smd marking PLVA2600A PLVA2650A PLVA2653A PLVA2656A SMD MARKING CODE b24
Contextual Info: N AMER PHILIPS/DISCRETE b 'ìE D P ro d u c t sp e c ific a tio n P hilip s S em ico n d u cto rs D o u b le lo w -vo ltag e avalanche re g u la to r d io d es PLVA2600A series Q U IC K R E F E R E N C E DATA FE A TU R E S • V e ry low d ynam ic im pedance at

Contextual Info: jnn^ 53030 SPST SOLID-STATE RELAY M ILITA RY, DC SO LID STA TE RELAY W ITH SH O RT C IR C U IT PRO TEC TIO N FEATURES • • • • • • • IAW DESC Drawing 87042 SPST, Normally Open Up to 1200 V RMS Isolation CMOS or TTL Compatible Input Power FET Output for Low On-state Resistance

centronic osd100 6

Abstract: LD20-3 MD100-3 MD25-3 OSD100-3 OSD200-3 QD100-3 QD320-3
Contextual Info: CENTRONIC LTD 4SE D m s ifl? □□□□on i Silicon Photodetectors « cent Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly suited to high speed pulsed applications in the region of 900nm and for other applications where the low capacitance obtained at 100

ECL IC NAND

Contextual Info: 7 « 19 DATA SHEET FX Family High Performance Gate Arrays SEMICONDUCTOR CORPORATION Features • 5 A rra y s fro m 2 0 K to 3 5 0 K G a te s • C lo c k D is trib u tio n S c h e m e fo r • S u p e rio r P e rfo rm a n c e : H igh S p e e d an d L o w P o w e r D is s ip a tio n

ADSP-1016JD

Abstract: MPY16HJ d64a f64a trw 1016 ADSP-1016JX mpy-16hj1 ADSP-1016SD trw mpy 16 MPY-16HJ
Contextual Info: ANALOG DEVICES □ FEATURES 16 x 16 Parallel Array M u ltip lier 150m W m ax P ow er Dissipation w ith CMOS Technology 145ns M u ltip ly Tim e Im proved M PY-16HJ Second Source T w o's C om plem ent, Unsigned M a gnitud e or M ixed M o d e M ultiplication

lem module ha

Abstract: TT 80 SCR MODULE
Contextual Info: POWEREX INC 1SE D • 75T4L21 G0G343? 1 ■ W IMEREX CM420455 CM420855 925-7272 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 Powere» Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 SCR/Diode POW-R-BLOICMModules

BAI 59 DIODE

Abstract: diode a57 smd
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET PDZ-B series Voltage regulator diodes 1998 Apr 23 Product specification Supersedes data of 1998 Jan 09 File under Discrete Semiconductors, SC01 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HB-50H H° 'S p a'# # c so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

t7351

Abstract: DD231 T7352 T7351B-FC
Contextual Info: Data Sheet January 1994 microelectronics group Lucent Technologies Bell Labs innovations T7351B/T7352 FDDI/TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

Contextual Info: MITSUBISHI HVIGBT MODULES F«l»SpssSSt"“*' CM800HB-66H n °mePa,a<,'eWC so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

Contextual Info: <o> ai 1m CmC i m w lC m m m •v i 00 S 304 “-.j U I N î AimD' N A N D i j A î E ^JSS W S E M /C O N D U C T O P m ssM FEA TU R E S The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This device also features a Function F output which is the wireNOR of the AND gate outputs. The inputs on the device

Contextual Info: ADE-207-052 HA13150 21 W x 4-Channel BTL Power IC HITACHI Preliminary SepRî99? Description Features H A 13150 is a four-channel BTL amplifier IC designed for car audio, featuring high output and low distortion, and applicable to digital audio equipment. It provides 21 W output per channel,

lc 2518

Abstract: ah 90 c251 A/lc 2518
Contextual Info: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YSmall size wound chip inductor with low DC resistance. YDemension without directional influence on mounterbility and characteristics. Y超小型低直流抵抗の巻線チップインダクタ