2SB113 Search Results

D1669

Abstract: 2SB1136 2SD16 AOOS
Contextual Info: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SD1667

Abstract: 2SB1134
Contextual Info: Inchange Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1134 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters,and other general high-current switching applications

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

2SB1134

Contextual Info: Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A [2SB1134/2SD1667]

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION

2SB1135

Abstract: 2SD1668
Contextual Info: SavantIC Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1668 ·Low collector saturation voltage ·Wide ASO APPLICATIONS ·Relay drivers ·High speed inverters;converters

2SB1133

Abstract: 2SD1666
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1133 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1666 APPLICATIONS

2SB1135

Abstract: 2SD1668
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@ IC= -4A ·Complement to Type 2SD1668

transistor

Abstract: POWER AND MEDIUM POWER TRANSISTOR SILICON PNP POWER TRANSISTOR 2SB1132 transistor 4400
Contextual Info: 2SB1132 PNP Silicon Medium Power Transistor Elektronische Bauelemente SOT-89 D Dimensions In Millimeters D1 1.BASE Symbol A  2.COLLECTOR  E  E1 3.EMITTER b1 b Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

Contextual Info: S "7 > V X 7 / T ransistors 2SD1665AM 2 SD 1665 AM NPN V ' 4 , ^ 3 * illliffl/M eclium Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ .fjT t> i0 /D im e n s io n s U n it: mm) • 1) 1 8 1 ^ 5 (BVceo = 160V)0 2) fjTT 0) *\ , CobTT'ffiX N0 3) 2SB1130AM

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

2SB1134

Abstract: 2SD1667
Contextual Info: Ordering number:ENN2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

ic TO 30313

Contextual Info: Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • • • Package Dimensions Wide ASO Adoption of MBIT process . Micaless package facilitating easy mounting.

Contextual Info: 2SB1132 h ~7 > V 7. $ / J ransistors 2 S B 1 1 3 2 xtf^=i'r'>7^y^-^PNP h7>V^^ Epitaxial Planar PNP Silicon Transistor ^ f t ^ i i f i ^ / M e d i u m Power Amp. • • ^Jf^T -;iig/Dim ensions (Unit : mm W * 1) P c = 2 W ? * . S (4 0 X 4 0 X 0 .7 m m -fe 7

Contextual Info: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ |3 |/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2

2041A

Contextual Info: Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

Contextual Info: 2SB1135 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SB1133

Abstract: 2SD1666 ENN3031A
Contextual Info: I Ordering num ber : ENN3031A} PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features • W ide ASO Adoption of M B IT process . • M icaless paekagc facilitating easy mounting.

2SB1134

Abstract: 2SD1667
Contextual Info: JMnic Product Specification 2SB1134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1667 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters and other general high-current switching applications