LEM LT 80 P Search Results

lem lt 2000

Abstract: M66244FP
Contextual Info: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

Contextual Info: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

MPY16HJ

Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Contextual Info: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

Lem LT 300 - t

Contextual Info: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers

Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2

SM5808

Abstract: tsx micro
Contextual Info: rupe SMS SOS 8 x 8 bit Multipliei— Accumulator NIPPON PRECISION CIRCUITS LTD. • General Th e SM5808 i s a h ig h s p e e d 8 x 8 b i t p a r a l l e l m u lt i p i i e r - a c c u m u l a t o r w h ic h o p e r a t e s a t 4 5 n S c y c l e t im e 22MHz m u l t i p i y - a c c u m u l a t e r a t e .

2SC1628

Abstract: 2sc1628-y 2sc1628 transistor 2sc1628-0 TRANSISTOR 2sc1628 2sc1628y
Contextual Info: î/UD>NPN=«Êi0Kh5>2?^ PCT755Î 2 s c 1628 SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS h O • H i g h V o lt a g e  itŒ T ^- : a \s 9 D river V q eo = ^ (il Stage A m p l i f ie r 150V 5 W : W S S A 8 1 8 ¿^> - 7' 5 ^ . / — s'm p lem en ta r 7 to

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of

LTSR 6-NP

Abstract: LTSR 25-NP ch-1228 nanalem lem lt 100 p LTS 25-NP hall current transducer lts 6-np LEM hall effect sensor voltage offset cancellation LTSR 15-NP LA 25-NP
Contextual Info: Technical Information LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access LTSR: ASIC Based Closed-Loop Transducers from 6 A up to 25 A nominal with reference access. By Stéphane Rollier, Christophe Benz & Hans Dieter Huber.

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

15-V

Abstract: CD40 CD4001UB
Contextual Info: HA RR IS S E M I C O N D S E C T O R M4E t B 4302S71 D03?3St> O « H A S T -^ 3 -^ .1 cD4001UB Types 21 HARRIS C M O S Quad 2-Input NOR Gate F e a tu re s : • Propagation delay tim e = 30 ns ty p . at C L = 50 p F , V D D = 1 0 V H ig h -V o lta g e Types (2 0-V o lt Rating)

MC 4538

Abstract: use of Multivibrator dual precision monostable multivibrator Multivibrator IC 74hc423 74HC4538 HC123 HC221 LS423 MC74HCXXXN
Contextual Info: M O TO R O LA MC54/74HC423 Product P r e v ie w HIGH-PERFORMANCE CMOS D U A L R E T R IG G E R A B L E M O N O S T A B L E M U LT IV IB R A T O R The M C 54/74H C 423 is identical in p in o u t to the LS423. The device in­ puts are com patible w ith standard CM O S o utputs; w ith pullup

lem module ha

Abstract: TT 80 SCR MODULE
Contextual Info: POWEREX INC 1SE D • 75T4L21 G0G343? 1 ■ W IMEREX CM420455 CM420855 925-7272 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 Powere» Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 SCR/Diode POW-R-BLOICMModules

ct-2048

Abstract: CT 2048 CD182 CCD182 Fairchild Imaging
Contextual Info: Fairchild Imaging Sensors Sensors PRELIMINARY i- o r a /v i- CCD182 2588 Element Linear Image Sensor FEATURES • 2 5 8 8 x 1 ph oto s ite array s im ila r to th e CCD181 ■ Very high sp e e d o p eration up to 6 0M H z data rate ■ V oltag e-s e le c tab le leng ths

LTE Receiver

Contextual Info: CY7B4663 Integrated 10BASE-FL Ethernet Transceiver Features F unctional Description Single chip Ethern et solution C om plie s with IEEE 802.3 10BAS E-FL standard Pin com patible with the popular 4663 110 mA LED current drive capability AUI interface allows both transform er and capacitive

BCs56

Abstract: BC857Ser BC85 BC856 BC857 BC858 BC859
Contextual Info: BC856A/B-BC ’857A/B BC858A/R/C-BC859B/C G en eral P urpose t ran sisto r P N P Silicon < o iim o « c ; d i \< ; k \ 3 m v k m m — m □ 2 XX - r>«tic# C o ó t S ee S O I2 J H T >MI I I > K R ating Loiiector-E m itter Voltage BC856 Symbol Nuhic VCE0

lem lt 100

Contextual Info: 电 流 传 感 器 LT 108-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 100 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 100 0 . ± 150 A A 器 RM min

Lem LT 80

Abstract: Lem LT 200 lem lt 100 Lem LT 500
Contextual Info: 电 流 传 感 器 LT 58-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 50 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 50 0 . ± 70 A A 器 RM min with ± 12 V

lem lt 100

Abstract: Lem LT 80
Contextual Info: 电 流 传 感 器 LT 108-T7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 100 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM 100 0 . ± 150 A A 器 RM min

651 lem

Contextual Info: Ordering number : EN5439 Monolithic Digital 1C LB1921 No. 5439 SA\YO Three-Phase Brushless Motor Driver for OA Applications Overview Package Dimensions T h e L B 1 9 2 1 is a s in g le -c h ip m o to r d riv e r c ir c u it th a t unit: mm pro v id es d irect P W M drive o u tp u t ap p ro p ria te for driv in g

IRF710

Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division

416-TB

Abstract: lem la 50 p ct 416
Contextual Info: 416-TB OSCAR Satellite Circular Polarization Boomer Antenna ij§cushcraft c o r p o r a t i o n 416-TB OSCAR Satellite Circular Polarization Boomer Antenna cushcraft C O R P O R A T I O N 951298 3/ 84 Your C u s h c ra ft 416TB. Tw ist Boom er, is a hig h perfo rm ance c ircu la r polarized Yagi fo r u s e w ith O S C A R an d other Satellites.

LT308-S7

Abstract: LEM LT 308 S7 Lem LT 300 - t Lem LT 300 308-S7 LEM LT 308 lem lt 2000 LT308-S
Contextual Info: 电 流 传 感 器 LT 308-S7 IPN = 原边和副边之间是绝缘的 ，用于测量直流 300 A 交流和脉冲电流 。 电参数 性能 原边额定有效值电流 原边电流， 测量范围 测量电阻 @ IPN IP RM with ± 12 V with ± 15 V 精度