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Catalog Datasheet | Type | Document Tags | |
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TIL81
Abstract: Phototransistor til 81 TIL 81 ir 4021 Phototransistor 4021
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MIL-S-19500. TIL81 Phototransistor til 81 TIL 81 ir 4021 Phototransistor 4021 | |
HEDS 1000
Abstract: EM1-1-720 agilent transmissive encoder 800.736.0194 HEDS-9100 A00 HEDS-9100-G00 EM1-0-500 EM1-0-127 HEDS-9200-300 optical encoder module
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sEDS-9200-300 HEDS-9200-360 HEDS 1000 EM1-1-720 agilent transmissive encoder 800.736.0194 HEDS-9100 A00 HEDS-9100-G00 EM1-0-500 EM1-0-127 HEDS-9200-300 optical encoder module | |
LTR-301
Abstract: LTR-301 lite-on LTR301
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LTR-301 BNS-OD-C131/A4 100Hz LTR-301 lite-on LTR301 | |
8ati
Abstract: 25CC kodak
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kfl02245 8ati 25CC kodak | |
AXP 223
Abstract: OP168F OP168FA OP168FB OP168FC OP508F OP538F
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OP168F OP168FA, OP168FB, OP168FC_ OP508F OP538F 000S5hfl AXP 223 OP168FA OP168FB OP168FC | |
Contextual Info: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to |
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SD3421/5421 SE3450/5450, SE3455/5455 SE3470/5470 SD3421/5421 SD3421 SD5421 --I50 | |
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications |
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SE3455/5455 SD3421/5421 SD3443/5443/5491 SD3410/5410 SD5600 INFRA-63 SE3455/5455 SE3455 SE5455 GD22472 | |
DDD317D
Abstract: OP235TX
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OP235/OP236TX/TXV DDD317D OP235TX | |
Contextual Info: KODENSHI CORP, ST-7L«\ DIMENSIONS K $ ftfcs Af J£<7>'> ' =r Unit:mm) > 7 * h b 7 > S>7 7 T'To 'MiT-*&(6]t4a<i5£ < fc -o T l ' S To The ST-7L is a high-sensitivity NPN silicon phototransistor mounted in a clear plastic package. With lensed package, this small phototransistor permits narrow angular response. |
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5242b0fl | |
Contextual Info: mss S ILIC O N P H O T O T R A N S IS TO R “ PIG TA IL” 61053 TYPE G S 3020 O P T O E LE C TR O N IC PRODUCTS D IV IS IO N G ENERAL DESCRIPTION MINIATURE LIGHT SENSOR WITH NARROW ANGULAR RESPONSE GLASS/METAL WELDED HERMETIC PACKAGED Mii 61053 is an N-P-N Planar Silicon Photodarlington Transistor in a lensed coaxial package |
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MIL-S-19500. | |
Contextual Info: SILICON PHOTODIODE VTP8740STRH FEATURES PRODUCT DESCRIPTION • Surface mount package • Low capacitance • Fast response • High shunt impedance • Tape & reel supplied This planar silicon photodiode features a lensed, water clear epoxy package suitable for surface |
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VTP8740STRH | |
Contextual Info: SILICON PHOTODIODE VTP8740BTRH FEATURES PRODUCT DESCRIPTION • Surface mount package • Low capacitance • Fast response This planar silicon photodiode features a lensed, water clear epoxy package suitable for surface mount assembly in a “back mounted” lens up |
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VTP8740BTRH | |
Contextual Info: .050" NPN Phototransistors VTT1015H, 16H, 17H TO-46 Flat Window Package PACKAGE DIMENSIONS inch mm CASE 1 TO-46 (FLAT WINDOW) CHIP TYPE: 50T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The |
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VTT1015H, VTE10xxH VTT1015H VTT1016H VTT1017H | |
4-40 UNC-2B SPECIFICATION
Abstract: LAR26C017 78510
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LAR26C017 785-1064nm laser2000 B-10/01 4-40 UNC-2B SPECIFICATION LAR26C017 78510 | |
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cqy 17
Abstract: infrared diodes
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SSA-005/2 SSA-005/2 950nm, cqy 17 infrared diodes | |
MID-11422
Abstract: MIE-144A4
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MIE-144A4 MIE-144A4 30MIN. MID-11422 | |
MID-30A225Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30A225 Package Dimensions The MID-30A225 is a NPN silicon phototransistor Unit : mm inches ψ3.00 (.118) 4.00 (.157) mounted in a lensed , special dark plastic package. 5.25 (.207) 1.00 (.040) 0.80±0.50 (.032±.020) |
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MID-30A225 MID-30A225 40MIN 00MIN 940nm) | |
MID-52A22Contextual Info: T-1 3/4 PACKAGE NPN PHOTOTRANSISOR MID-52A22 Description Package Dimensions The MID-52A22 is a NPN silicon phototransistor mounted Unit : mm inches in a lensed, special dark plastic package. The lensing effect ψ5.05 (.200) o of the package allows an acceptance view angle of 20 so |
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MID-52A22 MID-52A22 40MIN. 940nm) 50TYP. 00MIN. | |
ST5811Contextual Info: ST5811 Semiconductor Photo Transistor Features • • • • Lensed for high sensitivity φ5mm T-13/4 all plastic mold type High reliability and stable characteristics Visible light cut-off type Outline Dimensions unit : mm 5.0 7.8 8.6 2 0.5 21.0MIN 1.0MIN |
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ST5811 T-13/4) 54NOM KPT-0003-000 ST5811 | |
op225
Abstract: ICS Sensors 1210 OP-22
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OP225 850nm OP225 OP525 ICS Sensors 1210 OP-22 | |
smoke Sensors
Abstract: infrared smoke sensors EIR-3021
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EIR-3021 smoke Sensors infrared smoke sensors EIR-3021 | |
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1285H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. |
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VTE1285H | |
Contextual Info: UV Emitter Product No: M T3 7 0 0 W3 -UV Peak Emission Wavelength: 370nm The 370nm UV emitter is speciically designed for applications requiring high power output and accuracy in a lat lensed metal package. Custom package solutions and sorting are available. |
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370nm 370nm | |
Contextual Info: m HEW LETT5 PACKARD Surface Mount Lensed Chip LEDs Technical Data HSMD-L640 HSMG-L640 HSMH-L640 HSMS-L640 HSMY-L640 Features D escription • Five Colors Available • Com patible w ith IR Solder Process • Narrow Viewing Angle • Small 3.0 x 1.5 mm Package |
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HSMD-L640 HSMG-L640 HSMH-L640 HSMS-L640 HSMY-L640 HSMx-L640 -360mm 5968-1830E 5968-5002E |