OP168F Search Results

AXP 223

Abstract: OP168F OP168FA OP168FB OP168FC OP508F OP538F
Contextual Info: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes T y p e s O P 168 FA , O P 168 F B , O P 168 FC Features • • Flat lensed for wide radiation angle Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

OP168F

Abstract: OP168FA OP168FB OP538F 5113si
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT^asaa a a o a n a T-41-U 7771V Optoelectronics Division T R W Electronic Components Group Product Bulletin 5051 January 1985 a | G a A s Plastic Infrared Em itting Diodes Types OP168F, OP168FD, OP168FB, OP168FA Features Absolute Maximum Ratings ITa - 25°C unless otherwise noted

Contextual Info: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

AXP 223

Contextual Info: O R OPTEK Product Bulletin OP168F June 1996 G aAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

OP168F

Abstract: OP169 OP268 OP268FPS OP269 OP508F OP509 OP538F OP269A OP268FA
Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

OP168F

Abstract: OP168FA OP168FB OP168FC OP508F OP538F 300pps Infrared Emitting Diodes
Contextual Info: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC .065 1.65 .055 (1.40) .130 (3.30) .120 (3.05)' EMITTING SURFACE □ •165 (4.19) .155 (3.94) .090 (2.29) .070 (1.78) .100 (2.54) NOM J_ T

Contextual Info: 0 OPTEK Product Bulletin OP168F April 1993 GaAs Plastic Infrared Emitting Diodes Types OPT68FA, OP168FB, OP168FC • Flat lensed for wide radiation angle • Easily stackable on 0.100-inch (2.54mm hole centers • Mechanically and spectrally matched to the OP506F series phototransistor

Contextual Info: OP TE K T E C H N O L O G Y INC ObE D J bT'îflSflD O D D D l i a 2 | Optoelectronics Division 7 T -m -U T R W Electronic Components Group f? r V Pro d u c t Bulletin 5 0 5 1 Ja n u a r y 1 9 8 5 G aAs Plastic Infrared Em itting Diodes Types O P 16 8 F, OP168FO, OP168FB, O P 16 8 FA

OP168F

Abstract: OP538F OP538FA OP538FB OP538FC T070
Contextual Info: OPTEK Product Bulletin OP538F June 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch (2.54 mm) hole centers

Contextual Info: 0 .O F M P rod uct B ulletin OP538F June 1996 NPN Silicon Photodarlingtons Types OP538FA, OP538FB, OP538FC ¡1 1 Features A b so lu te Maxim um R atings T a = 25° C unless otherwise noted • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch (2.54

QP508FB

Contextual Info: . O PTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • • Flat lensed for w ide acceptance angle Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

OP168F

Abstract: OP508F OP508FA OP508FB OP508FC
Contextual Info: 0 OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP5Q8FA, OP5Q8FB, OP5Q8FC .0 6 5 .0 5 5 ( 1 .6 5 ( 1 .4 0 ) .1 2 0 (3 .0 5) ' :T 0R- v .1 0 0 ( 2 .5 4 ) NGM = + - / / - J_ OPTICAL C. .0 3 5 .0 2 5 (0 .8 9 ) (0 .6 4 )

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

J-10

Abstract: OP168F OP168FA OP168FB OP168FC OP538F
Contextual Info: OPTEK TE C HN OL OGY INC ObE D I bT'îflSflD ODODllS 5 I O p to electron ics D iv is io n THYw T - m - u T R W Electronic Components Group Product Bulletin 5051 January 1985 G a A s P la stic Infrared Em ittin g Diodes Types O P 16 8 F, O P 16 8 FD , OP 16 8 FB , O P 16 8 FA

Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on

OPB711

Abstract: OPB712 REFLECTIVE OBJECT SENSOR OP168F OP268 OP508F OP538F photo darlington sensor reflective photo sensor DARLINGTON phototransistor 14
Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

Contextual Info: Reflective Object Sensor OPB711, OPB712 Features: • Choice of phototransistor or photodarlington output  Unfocused for sensing diffuse surface  Low-cost plastic housing  Choice of filter or unfiltered Product Photo Here Description: