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    LET8180 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LET8180 STMicroelectronics RF Power Transistor Original PDF

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    LET8180

    Abstract: M252
    Text: LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE M252


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    PDF LET8180 LET8180 M252